Fig. 1.
The micro-fabrication processes sequence of the metal lines
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Jie Zhang, Jianqiang Han, Yijun Yin, Lizhen Dong, Wenju Niu. Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems[J]. Journal of Semiconductors, 2017, 38(9): 096005. doi: 10.1088/1674-4926/38/9/096005
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J Zhang, J Q Han, Y J Yin, L Z Dong, W J Niu. Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems[J]. J. Semicond., 2017, 38(9): 096005. doi: 10.1088/1674-4926/38/9/096005.
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Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems
DOI: 10.1088/1674-4926/38/9/096005
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Abstract
The Ti/Pt/Au metallization system has an advantage of resisting KOH or TMAH solution etching. To form a good ohmic contact, the Ti/Pt/Au metallization system must be alloyed at 400℃. However, the process temperatures of typical MEMS packaging technologies, such as anodic bonding, glass solder bonding and eutectic bonding, generally exceed 400℃. It is puzzling if the Ti/Pt/Au system is destroyed during the subsequent packaging process. In the present work, the resistance of doped polysilicon resistors contacted by the Ti/Pt/Au metallization system that have undergone different temperatures and time are measured. The experimental results show that the ohmic contacts will be destroyed if heated to 500℃. But if a 20 nm Pt film is sputtered on heavily doped polysilicon and alloyed at 700℃ before sputtering Ti/Pt/Au films, the Pt5Si2-Ti/Pt/Au metallization system has a higher service temperature of 500℃, which exceeds process temperatures of most typical MEMS packaging technologies.-
Keywords:
- Ti/Pt/Au metallization system,
- packaging,
- ohmic contacts,
- MEMS
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References
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