J. Semicond. > 2018, Volume 39 > Issue 10 > 104002
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SEMICONDUCTOR DEVICES

Research progress and challenges of two dimensional MoS2 field effect transistors

N Divya Bharathi and K Sivasankaran

+ Author Affiliations

 Corresponding author: K Sivasankaran, ksivasankaran@vit.ac.in, siva007i@gmail.com

DOI: 10.1088/1674-4926/39/10/104002

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Abstract: This review paper gives an outline of the recent research progress and challenges of 2D TMDs material MoS2 based device, that leads to an interesting path towards approaching the electronic applications due to its sizeable band gap. This review presents the improvement of MoS2 material as an alternate to a silicon channel in a transistor with its excellent energy band gap, thermal conductivity, and exclusive physical properties that are expected to draw attention to focusing on semiconducting devices for most futuristic applications. We discuss the band structure of MoS2 for a different number of layers with its structure, and various synthesis techniques of the MoS2 layer are also reviewed. The MoS2 based field effect transistor has attracted a great deal of attention due to its excellent properties such as mobility, on/off current ratio, and maximum on-current of the devices. The transition of mobility as a function of temperature and thickness dependence are also discussed. However, the mobility of MoS2 material is large in bulk form and lower in monolayer form. The use of a high-k gate dielectric in MoS2 FET is used to enhance the mobility of the device. Different metal contact engineering and different doping techniques were deployed to achieve low contact resistance. This review paper focuses on various aspects of layered TMDs material MoS2 based field effect transistors.

Key words: TMDs material, band structure, mobility, on/off current ratio, contact resistance



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Fig. 1.  (Color online) Schematic structure of MoS2 layer[31].

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Fig. 2.  (Color online) Band structure for different MoS2 layers[13].

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Fig. 3.  (Color online) Scenario of channel material for logic MOSFET[15].

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Fig. 4.  (Color online) Mobility and temperature for different channel layers/thickness[17].

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Fig. 5.  (Color online) Synthesizing monolayer MoS2 from bulk crystal using the scotch tape method.

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Fig. 6.  (Color online) CVD experimental set-up. (a) Sulfurization of MoO3 powder. (b) Sulfurization of Mo films. (c) Schematic illustration of the two-step thermal decomposition of (NH4)2MoS4[30].

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Fig. 7.  (Color online) Single-layer MoS2 transistor[34].

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Fig. 8.  (Color online) IDS–VGS characteristics for different dielectric materials[43].

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Fig. 9.  (Color online) (a) Schematic and optical microscope image. (b) IDS–VGS characteristics at different drain voltage. (c) Band diagram with ON and OFF states. (d) IDS–VDS characteristics with MoOx contact at VGS varies from 0 to –15 V[47].

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Fig. 11.  (Color online) Band alignment and band diagram of MoS2 with different metal contacts[51].

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Fig. 10.  (Color online) ID–VG characteristics for multilayer MoS2 transistor for different contact metals[48].

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Fig. 12.  (Color online) (a) ID–VG characteristics. (b) Ion and Ion/Ioff ratio. (c) ID–VD characteristics. (d) Output conductance[52].

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Fig. 13.  (Color online) Electrical behavior of MoS2 FET before and after PEI doping[55].

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Fig. 14.  (Color online) Chlorine doped TMDs FET and contact resistance after doping for MoS2/WS2[57].

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Fig. 15.  (Color online) (a) Cross-sectional view of graphene/MoS2 heterostructure. (b) Optical microscope image. (c) Topographical diagram for a CVD graphene-coated MoS2 single crystal[61].

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Fig. 16.  (Color online) (a) Output characteristic with and without graphene at Vbg from −20 to 5 V. (b) Transfer curve of hetero-contacts for FET in linear (right) and log (left) scale[62].

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Fig. 17.  (Color online) Single layer of integrated MoS2 transistor[68].

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Fig. 18.  (Color online) (a) Optical micrograph of the NAND gate and the SRAM fabricated on the same bilayer MoS2 thin film. (b) The output voltage of the flip-flop memory cell. (c) Output voltage for NAND gate[71].

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Table 1.   Performance summary of MoS2 transistor.

Type of layer Ion SS (mV/dec) Mobility (cm2/(V·s)) Ion/Ioff Ref.
SL 2.5 μA/μm 74 217 108 [34]
SL 1.6 mA/μm 60 200 1010 [35]
ML 7.07 mA/mm 140 517 108 [36]
ML 180 μA/μm 100–110 11 106 [38]
ML 461 nA/μm 100 31.1 106 [39]
ML 1 μA/μm 74 700 106 [45]
SL 1L = 18 μA/μm – 1L = 11 105 [51]
ML 5L = 34 μA/μm – 5L = 25 106 [51]
SL 300 μA/μm 65 – 106 [52]
ML 160 mA/mm – 50.4 107 [62]
SL 1.5 μA/μm 200 36.4 106 [73]
*SL: single layer; ML: multilayer.
DownLoad: CSV
[1]
Geim A K, Novoselov K S. The rise of graphene. Nat Mater, 2007, 6(3): 183 doi: 10.1038/nmat1849
[2]
Ganatra R, Zhang Q. Few-layer MoS2: a promising layered semiconductor. ACS Nano, 2014, 8(5): 4074 doi: 10.1021/nn405938z
[3]
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[4]
Choi M S, Qu D, Lee D, et al. Lateral MoS2 p–n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano, 2014, 8(9): 9332 doi: 10.1021/nn503284n
[5]
Izyumskaya N, Demchenko D, Avrutin V, et al. Two-dimensional MoS2 as a new material for electronic devices. Turkish J Phys, 2014, 38(3): 478
[6]
Bertolazzi S, Krasnozhon D, Kis A. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano, 2013, 7(4): 3246 doi: 10.1021/nn3059136
[7]
Van Leeuwen R, Castellanos-Gomez A, Steele G A, et al. Time-domain response of atomically thin MoS2 nanomechanical resonators. Appl Phys Lett, 2014, 105(4): 041911 doi: 10.1063/1.4892072
[8]
Yin Z, Li H, Li H, et al. Single-layer MoS2 phototransistors. ACS Nano, 2012, 6(1): 74 doi: 10.1021/nn2024557
[9]
Perkins F K, Friedman A L, Cobas E, et al. Chemical vapor sensing with monolayer MoS2. Nano Lett, 2013, 13(2): 668 doi: 10.1021/nl3043079
[10]
Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol, 2013, 8(7): 497 doi: 10.1038/nnano.2013.100
[11]
Mak K F, Lee C, Hone J, et al. Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett, 2010, 105(13): 136805 doi: 10.1103/PhysRevLett.105.136805
[12]
Splendiani A, Sun L, Zhang Y, et al. Emerging photoluminescence in monolayer MoS2. Nano Lett, 2010, 10(4): 1271 doi: 10.1021/nl903868w
[13]
Ellis J K, Lucero M J, Scuseria G E. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory. Appl Phys Lett, 2011, 99(26): 261908 doi: 10.1063/1.3672219
[14]
Kang J, Cao W, Xie X, et al. Graphene and beyond-graphene 2D crystals for next-generation green electronics. Micro-and Nanotechnology Sensors, Systems, and Applications, 2014, 9083: 908305
[15]
Schwierz F, Pezoldt J, Granzner R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale, 2015, 7(18): 8261 doi: 10.1039/C5NR01052G
[16]
Zhang F, Appenzeller J. Tunability of short-channel effects in MoS2 field-effect devices. Nano Lett, 2014, 15(1): 301
[17]
Ong Z Y, Fischetti M V. Mobility enhancement and temperature dependence in top-gated single-layer MoS2. Phys Rev B, 2013, 88(16): 165316 doi: 10.1103/PhysRevB.88.165316
[18]
Kim J H, Kim T H, Lee H, et al. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors. AIP Adv, 2016, 6(6): 065106 doi: 10.1063/1.4953809
[19]
Radisavljevic B, Kis A. Mobility engineering and a metal–insulator transition in monolayer MoS2. Nat Mater, 2013, 12(9): 815 doi: 10.1038/nmat3687
[20]
Lin M W, Kravchenko I I, Fowlkes J, et al. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors. Nanotechnology, 2016, 27(16): 165203 doi: 10.1088/0957-4484/27/16/165203
[21]
Roy T, Tosun M, Cao X, et al. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. ACS Nano, 2015, 9(2): 2071-9 doi: 10.1021/nn507278b
[22]
Liu L, Kumar S B, Ouyang Y, et al. Performance limits of monolayer transition metal dichalcogenide transistors. IEEE Trans Electron Devices, 2011, 58(9): 3042 doi: 10.1109/TED.2011.2159221
[23]
Kwak J Y, Hwang J, Calderon B. AIP advances electrical characteristics of multilayer MoS2 FET’s with MoS2/graphene heterojunction contacts. Nano Lett, 2014, 14(8): 4511 doi: 10.1021/nl5015316
[24]
Liu H, Neal A T, Ye P D. Channel length scaling of MoS2 MOSFETs. ACS Nano, 2012, 6(10): 8563 doi: 10.1021/nn303513c
[25]
Li X, Zhu H W. Two-dimensional MoS2: properties, preparation, and applications. J Materiom, 2015, 1(1): 33 doi: 10.1016/j.jmat.2015.03.003
[26]
Nicolosi V, Chhowalla M, Kanatzidis M G. AIP advances liquid exfoliation of layered materials. Science, 2013, 340(6139): 1226419 doi: 10.1126/science.1226419
[27]
Coleman J N, Lotya M, O’Neill A, et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science, 2011, 331(6017): 568 doi: 10.1126/science.1194975
[28]
Ren J, Wang S, Cheng Z, et al. Passively Q-switched nanosecond erbium-doped fiber laser with MoS2 saturable absorber. Optics Express, 2015, 23(5): 5607 doi: 10.1364/OE.23.005607
[29]
Fominski V Yu, Nevolin V N, Romanov R I. Ion-assisted deposition of MoS2 films from laser-generated plume under pulsed electric field. J Appl Phys, 2001, 89(2): 1449 doi: 10.1063/1.1330558
[30]
Lee Y H, Zhang X Q, Zhang W, et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv Mater, 2012, 24(17): 2320 doi: 10.1002/adma.201104798
[31]
Hong J, Hu Z, Probert M, et al. Exploring atomic defects in molybdenum disulphide monolayers. Nat Commun, 2015, 6: 6293 doi: 10.1038/ncomms7293
[32]
Li H, Kang Z, Liu Y, et al. Carbon nanodots: synthesis, properties and applications. J Mater Chem, 2012, 22(46): 24230 doi: 10.1039/c2jm34690g
[33]
Hussain S, Shehzad M A, Vikraman D, et al. Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering. Nanoscale, 2016, 8(7): 4340 doi: 10.1039/C5NR09032F
[34]
Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors. Nat Nanotechnol, 2011, 6(3): 147 doi: 10.1038/nnano.2010.279
[35]
Yoon Y, Ganapathi K, Salahuddin S. How good can monolayer MoS2 transistors be. Nano Lett, 2011, 11(9): 3768 doi: 10.1021/nl2018178
[36]
Liu H, Ye P D. Dual-gate MOSFET with atomic-layer-deposited Al2O3 as top gate dielectric. IEEE Electron Device Lett, 2012, 33(4): 546 doi: 10.1109/LED.2012.2184520
[37]
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    Received: 20 February 2018 Revised: 11 April 2018 Online: Uncorrected proof: 25 May 2018Published: 09 October 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(10): 104002
      N Divya Bharathi, K Sivasankaran. Research progress and challenges of two dimensional MoS2 field effect transistors[J]. Journal of Semiconductors, 2018, 39(10): 104002. doi: 10.1088/1674-4926/39/10/104002 ****N D Bharathi, K Sivasankaran, Research progress and challenges of two dimensional MoS2 field effect transistors[J]. J. Semicond., 2018, 39(10): 104002. doi: 10.1088/1674-4926/39/10/104002.
      Citation:
      N Divya Bharathi, K Sivasankaran. Research progress and challenges of two dimensional MoS2 field effect transistors[J]. Journal of Semiconductors, 2018, 39(10): 104002. doi: 10.1088/1674-4926/39/10/104002 ****
      N D Bharathi, K Sivasankaran, Research progress and challenges of two dimensional MoS2 field effect transistors[J]. J. Semicond., 2018, 39(10): 104002. doi: 10.1088/1674-4926/39/10/104002.
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      Research progress and challenges of two dimensional MoS2 field effect transistors

      DOI: 10.1088/1674-4926/39/10/104002

      • School of Electronics Engineering, VIT University, Vellore-632014, India

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      • Corresponding author: ksivasankaran@vit.ac.in, siva007i@gmail.com
      • Received Date: 2018-02-20
      • Revised Date: 2018-04-11
      • Published Date: 2018-10-01

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