Fig. 1.
Schematic cross-sectional structure of the fabricated n-channel 4H-SiC IGBT.
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| Citation: |
Xiaolei Yang, Yonghong Tao, Tongtong Yang, Runhua Huang, Bai Song. Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage[J]. Journal of Semiconductors, 2018, 39(3): 034005. doi: 10.1088/1674-4926/39/3/034005
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X L Yang, Y H Tao, T T Yang, R H Huang, B Song. Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage[J]. J. Semicond., 2018, 39(3): 034005. doi: 10.1088/1674-4926/39/3/034005.
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Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage
DOI: 10.1088/1674-4926/39/3/034005
More Information
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Abstract
Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.-
Keywords:
- 4H-SiC,
- n-channel,
- IGBT,
- ultra high voltage
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References
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