The oscillations in ESR spectra of Hg0.76Cd0.24Te implanted by Ag+ at the X and Q-bands

A. V. Shestakov; I. I. Fazlizhanov; I. V. Yatsyk; I. F. Gilmutdinov; M. I. Ibragimova; V. A. Shustov; R. M. Eremina

doi:10.1088/1674-4926/39/5/052001

J. Semicond. > 2018, Volume 39 > Issue 5 > 052001

SEMICONDUCTOR PHYSICS

The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands

A. V. Shestakov^{1, 2,}, I. I. Fazlizhanov^{1, 2}, I. V. Yatsyk^{1, 2}, I. F. Gilmutdinov², M. I. Ibragimova¹, V. A. Shustov¹ and R. M. Eremina^{1, 2}

+ Author Affiliations

Corresponding author: A. V. Shestakov, alekseivshestakov@gmail.com

DOI: 10.1088/1674-4926/39/5/052001

Abstract: The objects of the investigation were uniformly Ag⁺ doped Hg_0.76Cd_0.24Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 10¹⁶ cm⁻³ to p-type with carrier concentration of ≈ 3.9 × 10¹⁵ cm⁻³. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong oscillations in the magnetic field for Ag:Hg_0.76Cd_0.24Te in the temperature range 4.2–12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas–van Alphen effect in weakly correlated electron system with imperfect nesting vector.

Key words: de Haas–van Alphen effect, Ag:Hg_0.76Cd_0.24Te, magnetic resonance

References

[1]	Veynger A I, Zabrodskii A G, Tisnek T V, et al. Distinctive features of the magnetoresistance of degenerately doped nInAs and their influence on magnetic-field-dependent microwave absorption. Semiconductors, 1998, 32(5): 497 doi: 10.1134/1.1187427
[2]	Winterfeld L, Agapito L A, Li J, et al. Strain-induced topological insulator phase transition in HgSe. Phys Rev B, 2013, 87(7): 075143 doi: 10.1103/PhysRevB.87.075143
[3]	Comedi D, Kalish R. Vibrations of constituent atoms in Zn_xCd_1−xTe and Hg_1−xCd_xTe (various x). J Cryst Growth, 1990, 101(1): 1022 doi: 10.1016/0022-0248(90)91126-B
[4]	Bratashevskii Y A, Nikolaenko Y M, Prozorovskii V D, et al. Model of two-electron conduction in Hg_1−xCd_xTe. Sov Phys Semicond, 1990, 24(2): 188
[5]	Field S B, Reich D H, Shivaram B S, et al. Evidence for depinning of a Wigner crystal in Hg–Cd–Te. Phys Rev B, 1986, 33(7): 5082 doi: 10.1103/PhysRevB.33.5082
[6]	Tsidilkovskii I M. Crystallization of a three-dimensional electron gas. Sov Phys Usp, 1987, 152(4): 583 doi: 10.3367/UFNr.0152.198708c.0583
[7]	Bogoboyashchiy V V. Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals. Semiconductor Physics, Quantum Electronics And Optoelectronics, 1999, 2(1): 62
[8]	Kozyrev S P. Anomalous properties of optical lattice vibrations in HgTe: a double-well model of the lattice potential for a Hg atom. Phys Solid State, 2010, 52(3): 574 doi: 10.1134/S1063783410030194
[9]	Sun L Z, Chen X, Sun Y L, et al. Relaxations and bonding mechanism in Hg_1−xCd_xTe with mercury vacancy defect: first-principles study. Phys Rev B, 2006, 73: 195206 doi: 10.1103/PhysRevB.73.195206
[10]	Han J L, Sun L Z, Qu X D, et al. Electronic properties of the Au impurity in Hg_0.75Cd_0.25Te: first-principles study. Physica B, 2009, 404: 131 doi: 10.1016/j.physb.2008.10.017
[11]	Ibragimova M I, Baryshev N S, Yu V. Effect of successive implantation of Ag⁺(Cu⁺) and Xe⁺ ions on the recombination properties of Cd_xHg_1−xTe crystals. Semiconductors, 1997, 31(7): 666 doi: 10.1134/1.1187061
[12]	Kittel C. Introduction to solid state physics. New York: Wiley, 2004.
[13]	Pipard A B. Magnetoresistance in metals. New York: Cambridge University Press, 2009
[14]	Kireev P S. Physics of semiconductors. Moscow: Vysshaya shkola, 1975 (in Russian)
[15]	Popenko N, Bekirov B, Ivanchenko I, et al. Concentration anomalies of the magnetization of HgSe:Fe crystals. JETF Lett, 2014, 100(4): 247 doi: 10.1134/S0021364014160127
[16]	von Bardeleben H J, Jia Y Q, Manasreh M O, et al. Electron paramagnetic resonance study of the two-dimensional electron gas in Ga_1−xAl_xSb/InAs single quantum wells. Appl Phys Lett, 1993, 62(1): 90 doi: 10.1063/1.108782
[17]	Sboychakov O, Rakhmanov A L, Kugel K I, et al. Magnetic field effects in electron systems with imperfect nesting. Phys Rev B, 2017, 95(1): 014203 doi: 10.1103/PhysRevB.95.014203

Fig. 1. (Color online) The angular dependencies of ESR spectra in Ag:Hg_0.76Cd_0.24Te at the T = 4.2 K in the X-band (9.3 GHz) (a) as the function of magnetic field; (b) versus of the inverse magnetic field. (c) The magnetic resonance spectra in the Q-band (34 GHz).

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Fig. 2. (Color online) (a) The dependencies of magnetization versus magnetic field at 5 K. Inset: The residual data after subtracting the diamagnetic contribution of the conduction electrons and the Langevin function of magnetic saturation. (b) The dependence of the resistivity versus magnetic field at 5 K. Solid red line: fitting according to Eq. (1).

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Fig. 3. (Color online) (a) The high-frequency oscillation period dependence from magnetic field that was obtained from ESR and PPMS data. Dotted line: fitting according to Eq. (2). (b) The angular dependence of first minimum location of low-frequency oscillation obtained from ESR (X-band).

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Fig. 4. (Color online) (a) Temperature evolution of the oscillations in Ag:Hg_0.76Cd_0.24Te. (b) Dependence of the oscillation amplitude versus temperature near 4 kOe.

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Fig. 5. (Color online) (a) The view of spectra before and after X-ray irradiation. (b) The angular dependence spectra after X-ray irradiation (the angles shown here are relative).

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[1]	Veynger A I, Zabrodskii A G, Tisnek T V, et al. Distinctive features of the magnetoresistance of degenerately doped nInAs and their influence on magnetic-field-dependent microwave absorption. Semiconductors, 1998, 32(5): 497 doi: 10.1134/1.1187427
[2]	Winterfeld L, Agapito L A, Li J, et al. Strain-induced topological insulator phase transition in HgSe. Phys Rev B, 2013, 87(7): 075143 doi: 10.1103/PhysRevB.87.075143
[3]	Comedi D, Kalish R. Vibrations of constituent atoms in Zn_xCd_1−xTe and Hg_1−xCd_xTe (various x). J Cryst Growth, 1990, 101(1): 1022 doi: 10.1016/0022-0248(90)91126-B
[4]	Bratashevskii Y A, Nikolaenko Y M, Prozorovskii V D, et al. Model of two-electron conduction in Hg_1−xCd_xTe. Sov Phys Semicond, 1990, 24(2): 188
[5]	Field S B, Reich D H, Shivaram B S, et al. Evidence for depinning of a Wigner crystal in Hg–Cd–Te. Phys Rev B, 1986, 33(7): 5082 doi: 10.1103/PhysRevB.33.5082
[6]	Tsidilkovskii I M. Crystallization of a three-dimensional electron gas. Sov Phys Usp, 1987, 152(4): 583 doi: 10.3367/UFNr.0152.198708c.0583
[7]	Bogoboyashchiy V V. Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals. Semiconductor Physics, Quantum Electronics And Optoelectronics, 1999, 2(1): 62
[8]	Kozyrev S P. Anomalous properties of optical lattice vibrations in HgTe: a double-well model of the lattice potential for a Hg atom. Phys Solid State, 2010, 52(3): 574 doi: 10.1134/S1063783410030194
[9]	Sun L Z, Chen X, Sun Y L, et al. Relaxations and bonding mechanism in Hg_1−xCd_xTe with mercury vacancy defect: first-principles study. Phys Rev B, 2006, 73: 195206 doi: 10.1103/PhysRevB.73.195206
[10]	Han J L, Sun L Z, Qu X D, et al. Electronic properties of the Au impurity in Hg_0.75Cd_0.25Te: first-principles study. Physica B, 2009, 404: 131 doi: 10.1016/j.physb.2008.10.017
[11]	Ibragimova M I, Baryshev N S, Yu V. Effect of successive implantation of Ag⁺(Cu⁺) and Xe⁺ ions on the recombination properties of Cd_xHg_1−xTe crystals. Semiconductors, 1997, 31(7): 666 doi: 10.1134/1.1187061
[12]	Kittel C. Introduction to solid state physics. New York: Wiley, 2004.
[13]	Pipard A B. Magnetoresistance in metals. New York: Cambridge University Press, 2009
[14]	Kireev P S. Physics of semiconductors. Moscow: Vysshaya shkola, 1975 (in Russian)
[15]	Popenko N, Bekirov B, Ivanchenko I, et al. Concentration anomalies of the magnetization of HgSe:Fe crystals. JETF Lett, 2014, 100(4): 247 doi: 10.1134/S0021364014160127
[16]	von Bardeleben H J, Jia Y Q, Manasreh M O, et al. Electron paramagnetic resonance study of the two-dimensional electron gas in Ga_1−xAl_xSb/InAs single quantum wells. Appl Phys Lett, 1993, 62(1): 90 doi: 10.1063/1.108782
[17]	Sboychakov O, Rakhmanov A L, Kugel K I, et al. Magnetic field effects in electron systems with imperfect nesting. Phys Rev B, 2017, 95(1): 014203 doi: 10.1103/PhysRevB.95.014203

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Received: 19 September 2017 Revised: 14 December 2017 Online: Accepted Manuscript: 01 February 2018Uncorrected proof: 03 April 2018Published: 01 May 2018

Article Navigation > Journal of Semiconductors > 2018 > 39(5): 052001

A. V. Shestakov, I. I. Fazlizhanov, I. V. Yatsyk, I. F. Gilmutdinov, M. I. Ibragimova, V. A. Shustov, R. M. Eremina. The oscillations in ESR spectra of Hg0.76Cd0.24Te implanted by Ag+ at the X and Q-bands[J]. Journal of Semiconductors, 2018, 39(5): 052001. doi: 10.1088/1674-4926/39/5/052001 ****A. V. Shestakov, I. I. Fazlizhanov, I. V. Yatsyk, I. F. Gilmutdinov, M. I. Ibragimova, V. A. Shustov, R. M. Eremina. The oscillations in ESR spectra of Hg0.76Cd0.24Te implanted by Ag+ at the X and Q-bands[J]. J. Semicond., 2018, 39(5): 052001. doi: 10.1088/1674-4926/39/5/052001.

Citation:

A. V. Shestakov, I. I. Fazlizhanov, I. V. Yatsyk, I. F. Gilmutdinov, M. I. Ibragimova, V. A. Shustov, R. M. Eremina. The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands[J]. Journal of Semiconductors, 2018, 39(5): 052001. doi: 10.1088/1674-4926/39/5/052001 ****

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The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands

DOI: 10.1088/1674-4926/39/5/052001

1.
Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of RAS”, Russia
2.
Physics Institute, Kazan (Volga Region) Federal University, Russia

More Information

Corresponding author: alekseivshestakov@gmail.com
Received Date: 2017-09-19
Revised Date: 2017-12-14
Published Date: 2018-05-01

Abstract

Abstract

The objects of the investigation were uniformly Ag⁺ doped Hg_0.76Cd_0.24Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 10¹⁶ cm⁻³ to p-type with carrier concentration of ≈ 3.9 × 10¹⁵ cm⁻³. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong oscillations in the magnetic field for Ag:Hg_0.76Cd_0.24Te in the temperature range 4.2–12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas–van Alphen effect in weakly correlated electron system with imperfect nesting vector.
- de Haas–van Alphen effect,
- Ag:Hg_0.76Cd_0.24Te,
- magnetic resonance

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References(17)

References

[1]	Veynger A I, Zabrodskii A G, Tisnek T V, et al. Distinctive features of the magnetoresistance of degenerately doped nInAs and their influence on magnetic-field-dependent microwave absorption. Semiconductors, 1998, 32(5): 497 doi: 10.1134/1.1187427
[2]	Winterfeld L, Agapito L A, Li J, et al. Strain-induced topological insulator phase transition in HgSe. Phys Rev B, 2013, 87(7): 075143 doi: 10.1103/PhysRevB.87.075143
[3]	Comedi D, Kalish R. Vibrations of constituent atoms in Zn_xCd_1−xTe and Hg_1−xCd_xTe (various x). J Cryst Growth, 1990, 101(1): 1022 doi: 10.1016/0022-0248(90)91126-B
[4]	Bratashevskii Y A, Nikolaenko Y M, Prozorovskii V D, et al. Model of two-electron conduction in Hg_1−xCd_xTe. Sov Phys Semicond, 1990, 24(2): 188
[5]	Field S B, Reich D H, Shivaram B S, et al. Evidence for depinning of a Wigner crystal in Hg–Cd–Te. Phys Rev B, 1986, 33(7): 5082 doi: 10.1103/PhysRevB.33.5082
[6]	Tsidilkovskii I M. Crystallization of a three-dimensional electron gas. Sov Phys Usp, 1987, 152(4): 583 doi: 10.3367/UFNr.0152.198708c.0583
[7]	Bogoboyashchiy V V. Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals. Semiconductor Physics, Quantum Electronics And Optoelectronics, 1999, 2(1): 62
[8]	Kozyrev S P. Anomalous properties of optical lattice vibrations in HgTe: a double-well model of the lattice potential for a Hg atom. Phys Solid State, 2010, 52(3): 574 doi: 10.1134/S1063783410030194
[9]	Sun L Z, Chen X, Sun Y L, et al. Relaxations and bonding mechanism in Hg_1−xCd_xTe with mercury vacancy defect: first-principles study. Phys Rev B, 2006, 73: 195206 doi: 10.1103/PhysRevB.73.195206
[10]	Han J L, Sun L Z, Qu X D, et al. Electronic properties of the Au impurity in Hg_0.75Cd_0.25Te: first-principles study. Physica B, 2009, 404: 131 doi: 10.1016/j.physb.2008.10.017
[11]	Ibragimova M I, Baryshev N S, Yu V. Effect of successive implantation of Ag⁺(Cu⁺) and Xe⁺ ions on the recombination properties of Cd_xHg_1−xTe crystals. Semiconductors, 1997, 31(7): 666 doi: 10.1134/1.1187061
[12]	Kittel C. Introduction to solid state physics. New York: Wiley, 2004.
[13]	Pipard A B. Magnetoresistance in metals. New York: Cambridge University Press, 2009
[14]	Kireev P S. Physics of semiconductors. Moscow: Vysshaya shkola, 1975 (in Russian)
[15]	Popenko N, Bekirov B, Ivanchenko I, et al. Concentration anomalies of the magnetization of HgSe:Fe crystals. JETF Lett, 2014, 100(4): 247 doi: 10.1134/S0021364014160127
[16]	von Bardeleben H J, Jia Y Q, Manasreh M O, et al. Electron paramagnetic resonance study of the two-dimensional electron gas in Ga_1−xAl_xSb/InAs single quantum wells. Appl Phys Lett, 1993, 62(1): 90 doi: 10.1063/1.108782
[17]	Sboychakov O, Rakhmanov A L, Kugel K I, et al. Magnetic field effects in electron systems with imperfect nesting. Phys Rev B, 2017, 95(1): 014203 doi: 10.1103/PhysRevB.95.014203

The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands

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DOI: 10.1088/1674-4926/39/5/052001

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The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands

The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands