Fig. 1.
Reverse current of sample1 before and after 30 krad irradiation.
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| Citation: |
Yu’an Liu, Wenlang Luo. Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED[J]. Journal of Semiconductors, 2018, 39(7): 074005. doi: 10.1088/1674-4926/39/7/074005
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Y Liu, W L Luo. Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED[J]. J. Semicond., 2018, 39(7): 074005. doi: 10.1088/1674-4926/39/7/074005.
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Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED
DOI: 10.1088/1674-4926/39/7/074005
More Information
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Abstract
A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built. The reverse bias I–V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the micro-plasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses (30 krad) of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.-
Keywords:
- gamma irradiation,
- GaN-based LED,
- micro-plasma noise
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References
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