J. Semicond. > 2018, Volume 39 > Issue 9 > 094003

SEMICONDUCTOR DEVICES

Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Jie Zhao1, 2, Yanhui Xing1, Kai Fu2, Peipei Zhang3, Liang Song2, Fu Chen2, Taotao Yang1, 2, Xuguang Deng2, Sen Zhang4 and Baoshun Zhang2, 5,

+ Author Affiliations

 Corresponding author: Baoshun Zhang, bszhang2006@sinano.ac.cn

DOI: 10.1088/1674-4926/39/9/094003

PDF

Turn off MathJax

Abstract: The leakage current and breakdown voltage of AlGaN/GaN/AlGaN high electron mobility transistors on silicon with different GaN channel thicknesses were investigated. The results showed that a thin GaN channel was beneficial for obtaining a high breakdown voltage, based on the leakage current path and the acceptor traps in the AlGaN back-barrier. The breakdown voltage of the device with an 800 nm-thick GaN channel was 926 V @ 1 mA/mm, and the leakage current increased slowly between 300 and 800 V. Besides, the raising conduction band edge of the GaN channel by the AlGaN back-barrier lead to little degradation for sheet 2-D electron gas density, especially, in the thin GaN channel. The transfer and output characteristics were not obviously deteriorated for the samples with different GaN channel thickness. Through optimizing the GaN channel thickness and designing the AlGaN back-barrier, the lower leakage current and higher breakdown voltage would be possible.

Key words: AlGaN/GaN high electronic mobility transistorsAlGaN back-barrierbreakdown characteristicsleakage current pathSi substrate

Owing to the high electron mobility, high breakdown electric field, high density of the two-dimensional electron gas (2DEG), and suitability for commercial Si-based processes, AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate are promising candidates for high frequency power switching applications[1, 2]. However, AlGaN/GaN HEMTs also suffer some challenges in application, such as normal-off devices, current collapse, higher work voltage and lower leakage current[35], etc. The possibility to achieve a low leakage current with AlGaN back-barrier due to improved 2DEG confinement and improved breakdown voltage has been demonstrated[6, 7]. Through studying the growth condition of GaN HEMTs with different AlGaN back-barrier thicknesses, the back-barrier with optimal design can significantly reduce the GaN channel electron spillover and improve electron mobility[8]. With the increasing of the Al composition of the AlGaN back-barrier, the decrease of 2DEG density and the enhancement of mobility were found, the RF characteristics also were improved[9, 10]. GaN HEMTs with AlGaN back-barrier have shown the ability to suppress leakage current and enhance breakdown voltage, while suffering from low saturation current[6, 1012]. Besides, comparing with the GaN HEMTs on Si without AlGaN back-barrier, the defect density in the GaN channel of that with the AlGaN back-barrier will decrease due to lower lattice mismatch. Many efforts have also been made in the device with the GaN channel below 200 nm for dynamic on-resistance and DC characteristics[6, 10, 13]. Nevertheless, due to the drain-induced barrier lowering (DIBL) effect in a thin GaN channel, poor breakdown voltage still is observed in the GaN HEMTs.

In this work, we investigated the influence of GaN channel and AlGaN back-barrier thickness on the breakdown characteristics of AlGaN/GaN MIS-HEMTs. Besides, to exclude the effect of gate current leakage on the breakdown characteristics of the devices, SiNx dielectric deposited by low-pressure chemical vapor deposition (LPCVD) was adopted as the gate dielectric due to its high quality and low leakage[4].

Three AlGaN/GaN MIS-HEMTs wafers, named sample A, sample B and sample C were grown on 4-inch Si substrate by metal-organic chemical vapor deposition (MOCVD) with 120 nm AlN nucleation layer, 600 nm stepped AlGaN buffer layer, Al0.25Ga0.75N back-barrier, GaN channel and 20 nm of Al0.24Ga0.76N barrier layer. Different GaN-channel/AlGaN-back-barrier thicknesses of 800 nm/1500 nm, 1000 nm/ 1000 nm and 2000 nm/500 nm with similar total thickness were grown for sample A, B and C, respectively, to investigate their influence on the device performance and eliminate the influence of the total epitaxial thickness. Fig. 1 shows the schematic structure diagrams of three samples.

Figure  1.  (Color online) Schematic diagrams of AlGaN/GaN HEMT structures for three samples.

The fabrication process started with insulator deposition. A 20-nm-thick LPCVD-SiNx insulator was deposited at 780 °C as the gate dielectric and passivation layer. Device isolation was achieved by multi-energy fluorine ion implantation. After opening the source and drain windows by the neutral loop discharge (NLD) etching, O2 plasma treating for 5 min at 300 W and HCl : H2O = 1 : 10 dipping for 3 min were carried out in order to eliminate the etching damage and remove the native oxide layer. Ohmic contacts were formed by an alloyed Ti/Al/Ni/Au (20 nm/130 nm/50 nm/50 nm) metal stack and annealed at 850 °C for 30 s in N2 ambient. Ni/Au (50 nm/150 nm) contacts were evaporated by an e-beam evaporator for the gate metal. The source–drain and source–gate spacing of all devices were 23 and 5μm, respectively. The gate length and width were 2 and 100 μm, respectively. All DC properties of the devices were measured by the Agilent B1505A and Cascade 150.

The transfer and output curves of three devices are shown in Fig. 2. Transfer characteristics were measured with VDS at 10 V and output curves were attained with the VGS stepped between −12 and 0 V with the step of 2 V. The off-state current IOFF for three samples are as low as 6.11 × 10−10 A/mm with an ION/IOFF of ~109. The threshold voltage, VTH, defined by the leakage current @ 1 μA/mm of transfer curves[14], are −9.2, −9.8, and −10.2 V for sample A, sample B, and sample C, respectively. The decrease of threshold voltage is due to the increase of GaN channel thickness and the consequent increase of electron density. The increase of GaN channel thickness also leads to the decrease of the transconductance, with 77.2, 76.9, and 74.3 mS/mm for samples A, B, and C, respectively. The saturation current densities of three devices are 530.0, 528.5, and 527.8 mA/mm, and the on-state resistances are 11.9, 10.7 and 10.3 Ω·mm for samples A, B and C, respectively. More details of all samples are shown in Table 1.

Table  1.  Summary of the main DC characterization results.
Parameter Ron (Ω·mm) Saturation current (mA/mm) Subthreshold swing (mV/dec) Maximum Gm (mS/mm)
Sample A 11.9 530.0 75.2 77.2
Sample B 10.7 528.5 80.3 76.9
Sample C 10.3 527.8 95.3 74.3
DownLoad: CSV  | Show Table
Figure  2.  (Color online) The (a) linear and (b) semi-log scale of transfer curves with VDS at 10 V and (c) output curves with VGS varying between −12 and 0 V with a step of 2 V of three samples.

Fig. 3 shows the capacitance–voltage (C–V) curves and the extracted 2DEG concentrations of the three samples with a structure shown in the inset of Fig. 3(a). The sheet 2DEG concentrations are 0.83 × 1013, 0.87 × 1013 and 0.93 × 1013 cm−2, for samples A, B, and C, respectively. The large polarization-induced electric field in the AlGaN back-barrier will raise the conduction band edge of the GaN channel[6], as shown in Fig. 3(c). The higher potential of GaN channel is expected to decrease the sheet 2DEG concentrations. The VTH of the three samples from the C–V curves and the transfer curves show the same trend but different values. This is due to the response of deep-level bulk traps in the GaN channel and AlGaN barriers at different scan speeds[15].

Figure  3.  (Color online) (a) C–V characteristics of AlGaN/GaN MIS-HEMTs for three samples (the inset is the structure of C–V measuring). (b) 2DEG sheet concentrations of three samples. (c) Schematic band diagram of AlGaN/GaN heterostructures for three samples.

The breakdown characteristics of three devices were measured. The off-state gate voltage for three samples was set at VGS = −15 V, as shown in Fig. 4. It can be displayed clearly that the breakdown voltage increased with the increase of AlGaN back-barrier thickness. At low voltages (VDS < 400 V), the off-state leakage of three samples shows a similar trend or the off-state leakage current of three samples shows a slight dependency on the channel thickness at lower bias. This also indicated that the leakages of the three samples are not affected by the conduction band raising effect by the AlGaN back-barrier resulting in preventing electrons penetrating [16] since all the samples have thick GaN channel layers. However, compared with samples B and C, the leakage of sample A shows a completely different trend at high voltages. It could be inferred that the off-state leakage at high voltages will mainly be affected by the thickness of the GaN-channel/AlGaN-back-barrier, and a too large and thick GaN channel will introduce a continued increase of off-state leakage and consequently a low breakdown voltage. With the bias increasing, the negative bias between the gate and the channel will be higher, and the electrons would be pushed in AlGaN, the leakage current path is mainly due to the GaN channel layer at lower bias for all samples (the red solid line), as shown in Figs. 5(a) and 5(b). The back-barrier acts as the second leakage path especially for the ones with a thinner channel, due to the weakened confinement of the back-barrier at higher bias. This will result in the very slow increase in the region of sample A between 300 and 800 V partly due to acceptor traps introduced by the unintentionally doped Carbon in the AlGaN[17]. Then the off-state leakage current of sample A comes to a further increase with the further increase of bias beyond 800 V, and it is suggesting that the acceptor traps in the AlGaN back-barrier are completely filled with electrons[18].

Figure  4.  (Color online) Breakdown characteristic of samples A, B and C at VGS = −15 V.
Figure  5.  (Color online) Schematic diagram of leakage current for samples with (a) thick GaN channel and (b) thin GaN channel.

It should also be noticed that the leakage current of sample B is lower than that of samples A and C. To clarify this problem, the logarithmic IDVDS curves were plotted, as shown in Fig. 6. The inflexions (sudden change in the slope of the curve) were found at 133 and 216 V for sample A (or C) and sample B, respectively. This inflexion represents the traps-filled-limit voltage of traps based on the space charge limited current conduction[18], which means that acceptor traps were completely filled with the electron. In this theory, the density of acceptor traps in sample B is much higher than that of samples A and C. This explanation could be identified by the C–V characteristic at low frequency in the inset of Fig. 6. When the VG at the positive bias is above 0.98 V, the curve of sample B has an evident surge increase due to the trap effects in the material[19]. The full width at half-maximum (FWHM) values of the (002) diffraction peak for samples A, B, and C are 780, 1294 and 562 arc sec respectively. The significantly broadened (002) FWHM of sample B suggests that the high density of dislocations for sample B.

Figure  6.  (Color online) log IDS–log VDS characteristics from 0 V to high voltage for three samples. The inset is the low frequency C–V characteristics at 1 kHz.

We discussed the influence of the thickness of GaN-channel/AlGaN-back-barrier on the breakdown characteristics of AlGaN/GaN MIS-HEMTs. Although the 2DEG density increased with the increase of the GaN channel thickness, this also led to the continued increase of off-state leakage current thicker than 800 nm in this work. On the other hand, the breakdown voltage of AlGaN/GaN MIS-HEMTs would be improved remarkably by appropriately reducing the thickness of GaN channel and improving the thickness of AlGaN back-barrier.

We thank the Suzhou nanofabrication facility of SINANO, CAS, for the fabrication, characterization and testing of the AlGaN/GaN MIS-HEMT. We also thank the Tang Optoelectronics Equipment Co. Ltd, for the growth of the AlGaN/GaN HEMTs.



[1]
Ueda T, Ishida M, Tanaka T, et al. GaN transistors on Si for switching and high-frequency applications. Jpn J Appl Phys, 2014, 53(10): 100214 doi: 10.7567/JJAP.53.100214
[2]
Xin T, Yuan J, Gu G, et al. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation. J Semicond, 2015, 36(7): 074008 doi: 10.1088/1674-4926/36/7/074008
[3]
Yatabe Z, Asubar J T, Hashizume T. Insulated gate and surface passivation structures for GaN-based power transistors. J Phys D, 2016, 49(39): 393001 doi: 10.1088/0022-3727/49/39/393001
[4]
Zhang Z, Qin S, Fu K, et al. Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid. Appl Phys Express, 2016, 9(8): 084102 doi: 10.7567/APEX.9.084102
[5]
Katsuno T, Manaka T, Ishikawa T, et al. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement. Appl Phys Lett, 2014, 104(25): 1742
[6]
Medjdoub F, Zegaoui M, Grimbert B, et al. Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors. Appl Phys Express, 2011, 4(12): 4101
[7]
Bahat-Treidel E, Hilt O, Brunner F, et al. Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement. IEEE Trans Electron Devices, 2008, 55(12): 3354 doi: 10.1109/TED.2008.2006891
[8]
Kelekci O, Tasli P, Cetin S S, et al. Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD. Curr Appl Phys, 2012, 12(6): 1600 doi: 10.1016/j.cap.2012.05.040
[9]
Ravikiran L, Dharmarasu N, Radhakrishnan K, et al. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy. J Appl Phys, 2015, 117(2): 091003
[10]
Wang X, Huang S, Zheng Y, et al. Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer. IEEE Trans Electron Devices, 2014, 61(5): 1341 doi: 10.1109/TED.2014.2312232
[11]
Zanandrea A, Bahat-Treidel E, Rampazzo F, et al. Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron Reliab, 2012, 52(9/10): 2426
[12]
Hsiao Y L, Chang C A, Chang E, et al. Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates. Appl Phys Express, 2014, 7(5): 055501 doi: 10.7567/APEX.7.055501
[13]
Wang W J, Li L A, He L, et al. Influence of AlGaN back barrier layer thickness on the dynamic RON characteristics of AlGaN/GaN HEMTs. 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (Sslchina: Ifws), 2016: 77
[14]
Liu C, Yang S, Liu S H, et al. Thermally stable enhancement-mode GaN metal–isolator–semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier. IEEE Electron Device Lett, 2015, 36(4): 318 doi: 10.1109/LED.2015.2403954
[15]
Bao Q, Huang S, Wang X, et al. Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/ GaN metal–insulator–semiconductor structure. Semicond Sci Technol, 2016, 31(6): 065014 doi: 10.1088/0268-1242/31/6/065014
[16]
Marino F A, Bisi D, Meneghini M, et al. Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation. Solid-State Electron, 2015, 113: 9 doi: 10.1016/j.sse.2015.05.012
[17]
Armstrong A, Poblenz C, Green D S, et al. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy. Appl Phys Lett, 2006, 88(8): 8456
[18]
Zhou C, Jiang Q, Huang S, et al. Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices. IEEE Electron Device Lett, 2012, 33(8): 1132 doi: 10.1109/LED.2012.2200874
[19]
Fagerlind M, Allerstam F, Sveinbjörnsson E Ö, et al. Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C–V characterization of metal–insulator–semiconductor heterostructure capacitors. J Appl Phys, 2010, 108(1): 268
Fig. 1.  (Color online) Schematic diagrams of AlGaN/GaN HEMT structures for three samples.

Fig. 2.  (Color online) The (a) linear and (b) semi-log scale of transfer curves with VDS at 10 V and (c) output curves with VGS varying between −12 and 0 V with a step of 2 V of three samples.

Fig. 3.  (Color online) (a) C–V characteristics of AlGaN/GaN MIS-HEMTs for three samples (the inset is the structure of C–V measuring). (b) 2DEG sheet concentrations of three samples. (c) Schematic band diagram of AlGaN/GaN heterostructures for three samples.

Fig. 4.  (Color online) Breakdown characteristic of samples A, B and C at VGS = −15 V.

Fig. 5.  (Color online) Schematic diagram of leakage current for samples with (a) thick GaN channel and (b) thin GaN channel.

Fig. 6.  (Color online) log IDS–log VDS characteristics from 0 V to high voltage for three samples. The inset is the low frequency C–V characteristics at 1 kHz.

Table 1.   Summary of the main DC characterization results.

Parameter Ron (Ω·mm) Saturation current (mA/mm) Subthreshold swing (mV/dec) Maximum Gm (mS/mm)
Sample A 11.9 530.0 75.2 77.2
Sample B 10.7 528.5 80.3 76.9
Sample C 10.3 527.8 95.3 74.3
DownLoad: CSV
[1]
Ueda T, Ishida M, Tanaka T, et al. GaN transistors on Si for switching and high-frequency applications. Jpn J Appl Phys, 2014, 53(10): 100214 doi: 10.7567/JJAP.53.100214
[2]
Xin T, Yuan J, Gu G, et al. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation. J Semicond, 2015, 36(7): 074008 doi: 10.1088/1674-4926/36/7/074008
[3]
Yatabe Z, Asubar J T, Hashizume T. Insulated gate and surface passivation structures for GaN-based power transistors. J Phys D, 2016, 49(39): 393001 doi: 10.1088/0022-3727/49/39/393001
[4]
Zhang Z, Qin S, Fu K, et al. Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid. Appl Phys Express, 2016, 9(8): 084102 doi: 10.7567/APEX.9.084102
[5]
Katsuno T, Manaka T, Ishikawa T, et al. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement. Appl Phys Lett, 2014, 104(25): 1742
[6]
Medjdoub F, Zegaoui M, Grimbert B, et al. Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors. Appl Phys Express, 2011, 4(12): 4101
[7]
Bahat-Treidel E, Hilt O, Brunner F, et al. Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement. IEEE Trans Electron Devices, 2008, 55(12): 3354 doi: 10.1109/TED.2008.2006891
[8]
Kelekci O, Tasli P, Cetin S S, et al. Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD. Curr Appl Phys, 2012, 12(6): 1600 doi: 10.1016/j.cap.2012.05.040
[9]
Ravikiran L, Dharmarasu N, Radhakrishnan K, et al. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy. J Appl Phys, 2015, 117(2): 091003
[10]
Wang X, Huang S, Zheng Y, et al. Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer. IEEE Trans Electron Devices, 2014, 61(5): 1341 doi: 10.1109/TED.2014.2312232
[11]
Zanandrea A, Bahat-Treidel E, Rampazzo F, et al. Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron Reliab, 2012, 52(9/10): 2426
[12]
Hsiao Y L, Chang C A, Chang E, et al. Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates. Appl Phys Express, 2014, 7(5): 055501 doi: 10.7567/APEX.7.055501
[13]
Wang W J, Li L A, He L, et al. Influence of AlGaN back barrier layer thickness on the dynamic RON characteristics of AlGaN/GaN HEMTs. 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (Sslchina: Ifws), 2016: 77
[14]
Liu C, Yang S, Liu S H, et al. Thermally stable enhancement-mode GaN metal–isolator–semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier. IEEE Electron Device Lett, 2015, 36(4): 318 doi: 10.1109/LED.2015.2403954
[15]
Bao Q, Huang S, Wang X, et al. Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/ GaN metal–insulator–semiconductor structure. Semicond Sci Technol, 2016, 31(6): 065014 doi: 10.1088/0268-1242/31/6/065014
[16]
Marino F A, Bisi D, Meneghini M, et al. Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation. Solid-State Electron, 2015, 113: 9 doi: 10.1016/j.sse.2015.05.012
[17]
Armstrong A, Poblenz C, Green D S, et al. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy. Appl Phys Lett, 2006, 88(8): 8456
[18]
Zhou C, Jiang Q, Huang S, et al. Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices. IEEE Electron Device Lett, 2012, 33(8): 1132 doi: 10.1109/LED.2012.2200874
[19]
Fagerlind M, Allerstam F, Sveinbjörnsson E Ö, et al. Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C–V characterization of metal–insulator–semiconductor heterostructure capacitors. J Appl Phys, 2010, 108(1): 268
1

Oxide-based thin film transistors for flexible electronics

Yongli He, Xiangyu Wang, Ya Gao, Yahui Hou, Qing Wan, et al.

Journal of Semiconductors, 2018, 39(1): 011005. doi: 10.1088/1674-4926/39/1/011005

2

Thermo-electronic solar power conversion with a parabolic concentrator

Olawole C. Olukunle, Dilip K. De

Journal of Semiconductors, 2016, 37(2): 024002. doi: 10.1088/1674-4926/37/2/024002

3

Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Jiqiang Niu, Yang Zhang, Min Guan, Chengyan Wang, Lijie Cui, et al.

Journal of Semiconductors, 2016, 37(11): 114003. doi: 10.1088/1674-4926/37/11/114003

4

Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure

O.Ya Olikh, K.V. Voitenko, R.M. Burbelo, JaM. Olikh

Journal of Semiconductors, 2016, 37(12): 122002. doi: 10.1088/1674-4926/37/12/122002

5

Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

S. Theodore Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. Mohankumar, et al.

Journal of Semiconductors, 2015, 36(6): 064003. doi: 10.1088/1674-4926/36/6/064003

6

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates

Pramod Kumar Tiwari, Gopi Krishna Saramekala, Sarvesh Dubey, Anand Kumar Mukhopadhyay

Journal of Semiconductors, 2014, 35(10): 104002. doi: 10.1088/1674-4926/35/10/104002

7

Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

S. Theodore Chandra, N. B. Balamurugan

Journal of Semiconductors, 2014, 35(4): 044001. doi: 10.1088/1674-4926/35/4/044001

8

In situ TEM/SEM electronic/mechanical characterization of nano material with MEMS chip

Yuelin Wang, Tie Li, Xiao Zhang, Hongjiang Zeng, Qinhua Jin, et al.

Journal of Semiconductors, 2014, 35(8): 081001. doi: 10.1088/1674-4926/35/8/081001

9

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

S. Theodore Chandra, N.B. Balamurugan, G. Subalakshmi, T. Shalini, G. Lakshmi Priya, et al.

Journal of Semiconductors, 2014, 35(11): 114003. doi: 10.1088/1674-4926/35/11/114003

10

Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

Wanjun Chen, Jing Zhang, Bo Zhang, Kevin Jing Chen

Journal of Semiconductors, 2013, 34(2): 024003. doi: 10.1088/1674-4926/34/2/024003

11

Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer

Hassan Kaatuzian, Hadi Dehghan Nayeri, Masoud Ataei, Ashkan Zandi

Journal of Semiconductors, 2013, 34(9): 094001. doi: 10.1088/1674-4926/34/9/094001

12

Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

Fang Yulong, Dun Shaobo, Liu Bo, Yin Jiayun, Cai Shujun, et al.

Journal of Semiconductors, 2012, 33(5): 054005. doi: 10.1088/1674-4926/33/5/054005

13

MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

Jie Binbin, Sah Chihtang

Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001

14

Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

Fu Xiaojun, Zhang Haiying, Guo Changxin, Xu Jingbo, Li Ming, et al.

Journal of Semiconductors, 2009, 30(8): 084002. doi: 10.1088/1674-4926/30/8/084002

15

Ternary logic circuit design based on single electron transistors

Wu Gang, Cai Li, Li Qin

Journal of Semiconductors, 2009, 30(2): 025011. doi: 10.1088/1674-4926/30/2/025011

16

TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD

Zhu Hua, Li Cuiyun, Mo Chunlan, Jiang Fengyi, Zhang Meng, et al.

Journal of Semiconductors, 2008, 29(3): 539-543.

17

Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs

Zhang Ping, Liu Junlin, Zheng Changda, Jiang Fengyi

Journal of Semiconductors, 2008, 29(3): 563-565.

18

A 5.1W/mm Power Density GaN HEMT on Si Substrate

Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, et al.

Chinese Journal of Semiconductors , 2007, 28(12): 1949-1951.

19

Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer

Liu Zhe, Wang Xiaoliang, Wang Junxi, Hu Guoxin, Li Jianping, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 230-233.

20

AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz

Li Xianjie, Zeng Qingming, Zhou Zhou, Liu Yugui, Qiao Shuyun, et al.

Chinese Journal of Semiconductors , 2005, 26(11): 2049-2052.

1. Wang, X., Zhang, Y., Wang, M. et al. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum, 2025. doi:10.1016/j.vacuum.2025.114135
2. Lin, C.-H., Yeh, C.-H., Chen, P.-H. et al. Analysis of Insulator Breakdown Induced by Body-Grounded-Coupling Effect in GaN-Based MIS-HEMT. IEEE Transactions on Electron Devices, 2025. doi:10.1109/TED.2025.3532402
3. Lino, L., Saravana Kumar, R., Murugapandiyan, P. et al. Optimizing Back Barrier Material Composition and Thickness of Al0.15Ga0.85N/GaN/AlxGa1-xN MIS-HEMT Device Structure for High-Power Enhancement Mode Applications. 2024. doi:10.1109/ic-ETITE58242.2024.10493795
4. Mukhopadhyay, S., Liu, C., Chen, J. et al. Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□). Crystals, 2023, 13(10): 1456. doi:10.3390/cryst13101456
5. Jiang, Y.-Z., Mo, W.-Y., Wang, W. et al. Modeling of novel RF AlGaN/GaN HEMTs with the structure of n-Si drain extension. Micro and Nanostructures, 2023. doi:10.1016/j.micrna.2022.207499
6. Chand, N., Adak, S., Swain, S.K. et al. Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier. Computers and Electrical Engineering, 2022. doi:10.1016/j.compeleceng.2022.107695
7. Wang, S., Zhou, Q., Chen, K. et al. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range. Materials, 2022, 15(2): 654. doi:10.3390/ma15020654
8. Augustine Fletcher, A.S., Nirmal, D., Arivazhagan, L. et al. Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications. 2019. doi:10.1109/ICSPC46172.2019.8976482
9. Alfaraj, N., Min, J.-W., Kang, C.H. et al. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III-nitrides, III-oxides, and two-dimensional materials. Journal of Semiconductors, 2019, 40(12): 121801. doi:10.1088/1674-4926/40/12/121801
  • Search

    Advanced Search >>

    GET CITATION

    Jie Zhao, Yanhui Xing, Kai Fu, Peipei Zhang, Liang Song, Fu Chen, Taotao Yang, Xuguang Deng, Sen Zhang, Baoshun Zhang. Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs[J]. Journal of Semiconductors, 2018, 39(9): 094003. doi: 10.1088/1674-4926/39/9/094003
    J Zhao, Y H Xing, K Fu, P P Zhang, L Song, F Chen, T T Yang, X G Deng, S Zhang, B S Zhang, Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs[J]. J. Semicond., 2018, 39(9): 094003. doi: 10.1088/1674-4926/39/9/094003.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 5751 Times PDF downloads: 241 Times Cited by: 9 Times

    History

    Received: 09 February 2018 Revised: 23 March 2018 Online: Uncorrected proof: 23 May 2018Accepted Manuscript: 05 July 2018Published: 01 September 2018

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Jie Zhao, Yanhui Xing, Kai Fu, Peipei Zhang, Liang Song, Fu Chen, Taotao Yang, Xuguang Deng, Sen Zhang, Baoshun Zhang. Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs[J]. Journal of Semiconductors, 2018, 39(9): 094003. doi: 10.1088/1674-4926/39/9/094003 ****J Zhao, Y H Xing, K Fu, P P Zhang, L Song, F Chen, T T Yang, X G Deng, S Zhang, B S Zhang, Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs[J]. J. Semicond., 2018, 39(9): 094003. doi: 10.1088/1674-4926/39/9/094003.
      Citation:
      Jie Zhao, Yanhui Xing, Kai Fu, Peipei Zhang, Liang Song, Fu Chen, Taotao Yang, Xuguang Deng, Sen Zhang, Baoshun Zhang. Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs[J]. Journal of Semiconductors, 2018, 39(9): 094003. doi: 10.1088/1674-4926/39/9/094003 ****
      J Zhao, Y H Xing, K Fu, P P Zhang, L Song, F Chen, T T Yang, X G Deng, S Zhang, B S Zhang, Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs[J]. J. Semicond., 2018, 39(9): 094003. doi: 10.1088/1674-4926/39/9/094003.

      Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

      DOI: 10.1088/1674-4926/39/9/094003
      Funds:

      Project partly supported by the Key Research and Development Program of Jiangsu Province (No. BE2016084), the National Natural Science Foundation of China (Nos. 11404372, 6157401, 61704185), the Natural Science Foundation of Beijing, China (No. 4182015), the Scientific Research Fund Project of Municipal Education Commission of Beijing (No. PXM2017_014204_500034), the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767), and the National Key Research and Development Program of China (No. 2016YFC0801203).

      More Information
      • Corresponding author: bszhang2006@sinano.ac.cn
      • Received Date: 2018-02-09
      • Revised Date: 2018-03-23
      • Published Date: 2018-09-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return