Fig. 1.
Schematic illustration the mist-CVD system used for α-Ga2O3 epitaxy.
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Tongchuan Ma, Xuanhu Chen, Fangfang Ren, Shunming Zhu, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye. Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique[J]. Journal of Semiconductors, 2019, 40(1): 012804. doi: 10.1088/1674-4926/40/1/012804
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T C Ma, X H Chen, F F Ren, S M Zhu, S L Gu, R Zhang, Y D Zheng, J D Ye, Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique[J]. J. Semicond., 2019, 40(1): 012804. doi: 10.1088/1674-4926/40/1/012804.
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Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique
DOI: 10.1088/1674-4926/40/1/012804
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Abstract
The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire (0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-half-maximum (FWHM) of rocking curves for the (0006) and (10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm−2, respectively, indicative of high single crystallinity. The out-of-plane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively. The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors. -
References
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