J. Semicond. > 2019, Volume 40 > Issue 10 > 101303
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REVIEWS

Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates

Wenqi Wei1, Qi Feng1, Zihao Wang1, 2, Ting Wang1, 2, and Jianjun Zhang1, 2

+ Author Affiliations

 Corresponding author: Ting Wang, Email: wangting@iphy.ac.cn

DOI: 10.1088/1674-4926/40/10/101303

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Abstract: Direct epitaxial growth III–V quantum dot (QD) structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration. However, epitaxial growth of III–V materials on Si encounters the following three major challenges: high density of threading dislocations, antiphase boundaries and thermal cracks, which significantly degrade the crystal quality and potential device performance. In this review, we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si (001) substrates by III–V/IV hybrid epitaxial growth via (111)-faceted Si hollow structures. Moreover, by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band. High-performance InAs/GaAs QD micro-disk lasers with sub-milliwatts threshold on Si (001) substrates are fabricated and characterized. The above results pave a promising path towards the on-chip lasers for optical interconnect applications.

Key words: quantum dots, silicon photonics, epitaxial growth, semiconductor lasers



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Fig. 1.  (Color online) (a) The plot of bandgap energy and wavelength versus lattice constant and misfit between III–V and group IV [20]. The electron and hole mobilities in units of cm2/(V·s) are also shown below the chemical symbols. (b) Cross-sectional TEM image on the interface between GaAs and silicon.

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Fig. 2.  (Color online) (a) Schematic showing polar/nonpolar interface between GaAs and Ge. Mono-atomic steps on Ge surface result in APBs, planes of As–As or Ga–Ga bonds. The antiphase domains (APBs) can also self-annihilate (left) or rise to the epi-layer surface (right). Diatomic steps on the Ge surface (center) do not result in APB formation[25]. (b) Surface AFM image of GaAs grown on Si (001) substrate, which indicates a high density of APBs.

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Fig. 3.  Optical microscope image of the thermal cracks on III–V/Si surface.

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Fig. 4.  (Color online) (a) 5 × 5 μm2 AFM image of 250 nm GaAs buffer layer epitaxial growth on Ge substrate. (b) Cross-sectional TEM image at the interface of GaAs and Ge.

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Fig. 5.  (Color online) (a) The schematic of 5-layer InAs/GaAs QD structure grown on Ge substrate for O-band wavelength emission. (b) RT PL spectra of InAs/GaAs QDs on GaAs/Ge substrate and GaAs substrate, respectively. Inset: Zoomed-in cross-sectional TEM image of InAs/GaAs QDs on GaAs/Ge substrate.

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Fig. 6.  (Color online) (a) 5 × 5 μm2 AFM image of InGaAs metamorphic buffer layer epitaxially grown on GaAs/Ge substrate. (b) The cross-sectional TEM image of the epitaxial structures on Ge. The arrow shows the growth direction. (c) High-magnification TEM image of a truncated InAs/InGaAs QD. (d) RT PL spectra of InAs/InGaAs QDs grown on both Ge substrate and GaAs substrate. Inset: 1 × 1 μm2 AFM image of InAs QDs on Ge substrate.

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Fig. 7.  (Color online) (a), (b) and (c) Cross-sectional SEM images of U-shape patterned Si substrate, homoepitaxy of 550 nm Si on (111)-faceted Si hollow substrate, and III–V buffer layers on (111)-faceted Si hollow substrate, respectively. All the images are taken along the [110] axis. (d) 10 × 10 μm2 AFM image of III–V buffer layers on Si substrate.

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Fig. 8.  (Color online) (a) Cross-sectional TEM image of GaAs on (111)-faceted Si hollow substrate, taken along [110] axis. (b) Plan-view ECCI to show TDs on GaAs/Si template. (c) Plan-view TEM image of GaAs surface on Si.

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Fig. 9.  (Color online) (a) RT PL spectra of InAs/GaAs QDs grown on both GaAs and GaAs/Si (001) substrates, for O-band emission. Inset: 1 × 1 μm2 AFM image of InAs/GaAs QDs on GaAs/Si substrate. (b) RT PL spectra of InAs/InGaAs QDs grown on both GaAs and GaAs/Si (001) substrates, for C/L-band emission. Inset: 1 × 1 μm2 AFM image of surface InAs/InGaAs QDs on GaAs/Si substrate.

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Fig. 10.  (Color online) Schematic diagrams of (a) microdisk laser structure and (b) microdisk laser on GaAs/Si (001) substrate. (c) and (d) Tilted SEM images of microdisk lasers on GaAs (001) and GaAs/Si (001) substrates, respectively.

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Fig. 11.  (Color online) Integrated intensity of microdisk lasers versus the power of pump laser on (a) GaAs substrate and (c) Si (001) substrate, respectively. Inset: the log–log plot of ‘L–L curve’. PL spectra of microdisk lasers on (b) GaAs substrate and (d) Si (001) substrate, respectively, under different pump powers.

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[6]
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Wang Z, Van Gasse K, Moskalenko V, et al. A III–V-on-Si ultra-dense comb laser. Light: Sci Appl, 2017, 6(5), e16260 doi: 10.1038/lsa.2016.260
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[19]
Wang Z, Abbasi A, Dave U, et al. Novel light source integration approaches for silicon photonics. Laser Photonics Rev, 2017, 11(4), 1700063 doi: 10.1002/lpor.201700063
[20]
Liu C W, Östling M, Hannon J B. New materials for post-Si computing. MRS Bulletin, 2014, 39(8), 658 doi: 10.1557/mrs.2014.162
[21]
Wu J, Chen S, Seeds A, et al. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells. J Phys D, 2015, 48(36), 363001 doi: 10.1088/0022-3727/48/36/363001
[22]
Tang M, Chen S, Wu J, et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. Opt Express, 2014, 22(10), 11528 doi: 10.1364/OE.22.011528
[23]
Wang J, Hu H Y, Deng C, et al. Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition. Chin Phys B, 2015, 24(2), 028101 doi: 10.1088/1674-1056/24/2/028101
[24]
Li Q, Lau K M. Epitaxial growth of highly mismatched III–V materials on (001) silicon for electronics and optoelectronics. Prog Cryst Growth Charact Mater, 2017, 63(4), 105 doi: 10.1016/j.pcrysgrow.2017.10.001
[25]
Faucher J, Masuda T, Lee M L. Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge. J Vac Sci Technol B, 2016, 34(4), 041203 doi: 10.1116/1.4945659
[26]
Liao M, Chen S, Park J S, et al. III–V quantum-dot lasers monolithically grown on silicon. Semicond Sci Technol, 2018, 33(12), 123002 doi: 10.1088/1361-6641/aae6a5
[27]
Brammertz G, Mols Y, Degroote S, et al. Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates. J Appl Phys, 2006, 99(9), 093514 doi: 10.1063/1.2194111
[28]
Alcotte R, Martin M, Moeyaert J, et al. Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility. Appl Mater, 2016, 4(4), 046101 doi: 10.1063/1.4945586
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Wang T, Liu H, Lee A, et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Opt Express, 2011, 19(12), 11381 doi: 10.1364/OE.19.011381
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    Received: 13 July 2019 Revised: 09 September 2019 Online: Accepted Manuscript: 19 September 2019Uncorrected proof: 24 September 2019Corrected proof: 17 October 2019Published: 01 October 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(10): 101303
      Wenqi Wei, Qi Feng, Zihao Wang, Ting Wang, Jianjun Zhang. Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates[J]. Journal of Semiconductors, 2019, 40(10): 101303. doi: 10.1088/1674-4926/40/10/101303 ****W Q Wei, Q Feng, Z H Wang, T Wang, J J Zhang, Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates[J]. J. Semicond., 2019, 40(10): 101303. doi: 10.1088/1674-4926/40/10/101303.
      Citation:
      Wenqi Wei, Qi Feng, Zihao Wang, Ting Wang, Jianjun Zhang. Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates[J]. Journal of Semiconductors, 2019, 40(10): 101303. doi: 10.1088/1674-4926/40/10/101303 ****
      W Q Wei, Q Feng, Z H Wang, T Wang, J J Zhang, Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates[J]. J. Semicond., 2019, 40(10): 101303. doi: 10.1088/1674-4926/40/10/101303.
      shu

      Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates

      DOI: 10.1088/1674-4926/40/10/101303
      • 1.

        Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

      • 2.

        Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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      • Corresponding author: Ting Wang, Email: wangting@iphy.ac.cn
      • Received Date: 2019-07-13
      • Revised Date: 2019-09-09
      • Published Date: 2019-10-01

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