Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Xuejiao Sun; Zhiguo Yu; Ning Zhang; Lei Liu; Junxi Wang; Jinmin Li; Yun Zhang

doi:10.1088/1674-4926/40/3/032301

J. Semicond. > 2019, Volume 40 > Issue 3 > 032301

ARTICLES

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Xuejiao Sun^{1, 2}, Zhiguo Yu^1,, Ning Zhang^{1, 2}, Lei Liu^{1, 2}, Junxi Wang^{1, 2}, Jinmin Li^{1, 2} and Yun Zhang^{1, 2}

+ Author Affiliations

Corresponding author: Zhiguo Yu, Email: zgyu@semi.ac.cn

DOI: 10.1088/1674-4926/40/3/032301

Abstract: Metallic nanotextured reflectors have been widely used in light emitting diodes (LEDs) to enhance the light extraction efficiency. However, the light absorption loss for the metallic reflectors with nanotexture structure is often neglected. Here, the influence of absorption loss of metallic nanotextured reflectors on the LED optoelectronic properties were studied. Two commonly used metal reflectors Ag and Al were applied to green GaN-based LEDs. By applying a Ag nanotextured reflector, the light output power of the LEDs was enhanced by 78% due to the improved light extraction. For an Al nanotextured reflector, however, only a 6% enhancement of the light output power was achieved. By analyzing the metal absorption using finite-difference time-domain (FDTD) and the metal reflectivity spectrum, it is shown that the surface plasmon (SP) intrinsic absorption of metallic reflectors with nanotexture structure play an important role. This finding will aid the design of the high-performance metal nanotextured reflectors and optoelectronics devices.

Key words: metallic nanotextured reflector, surface plasmon, metal loss, GaN, light emitting diodes

References

[1]	Amano H, Kito M, Hiramatsu K, et al. P-type conduction in mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI). Jpn J Appl Phys, 1989, 28 (12), L2112 doi: 10.1143/jjap.28.l2112
[2]	Nakamura S, Mukai T, Senoh M. High-power GAN p-n-junction blue-light-emitting diodes. Jp J Appl Phys, 1991, 30 (12A), L1998 doi: 10.1143/jjap.30.l1998
[3]	Krames M R, Shchekin O B, Mueller-Mach R, et al. Status and future of high-power light-emitting diodes for solid-state lighting. J Display Technol, 2007, 3 (2): 160 doi: 10.1109/JDT.2007.895339
[4]	Zhmakin A I. Enhancement of light extraction from light emitting diodes. Phys Rep-Rev Sec Phys Lett, 2011, 498 (4/5): 189 doi: 10.1016/j.physrep.2010.11.001
[5]	Wierer J J Jr, David A, Megens M M. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat Photonics, 2009, 3 (3): 163 doi: 10.1038/nphoton.2009.21
[6]	Koo W H, Jeong S M, Araoka F, et al. Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles. Nat Photonics, 2010, 4 (4): 222 doi: 10.1038/nphoton.2010.7
[7]	Wierer J J, Steigerwald D A, Krames M R, et al. High-power AlGaInN flip-chip light-emitting diodes. Appl Phys Lett, 2001, 78 (22): 3379 doi: 10.1063/1.1374499
[8]	Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett, 2004, 84 (6): 855 doi: 10.1063/1.1645992
[9]	Lee Y J, Hwang J M, Hsu T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technol Lett 2006, 18 (9-12): 1152 doi: 10.1109/LPT.2006.874737
[10]	Tadatomo K, Okagawa H, Ohuchi Y, et al. High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy. Jp J Appl Phys, 2001, 40 (6B), L583 doi: 10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2-G
[11]	Yamada M, Mitani T, Narukawa Y, et al. InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Jpn J Appl Phys, 2002, 41 (12B), L1431 doi: 10.1143/JJAP.41.L1431
[12]	Lee H Y, Lin Y C, Su Y T, et al. Performance improvement of GaN-based flip-chip white light-emitting diodes with diffused nanorod reflector and with ZnO nanorod antireflection layer. J Nanomater, 2014, 2014, 987479. doi: 10.1155/2014/987479
[13]	Yin Z, Liu X, Yao H, et al. Light extraction enhancement of GaN LEDs by hybrid ZnO micro-cylinders and nanorods array. IEEE Photonics Technol Lett, 2013, 25 (20): 1989. doi: 10.1109/LPT.2013.2279502
[14]	Xi J Q, Luo H, Pasquale A J, et al. Enhanced light extraction in GaInN light-emitting diode with pyramid reflector. IEEE Photonics Technol Lett 2006, 18 (21-24): 2347. doi: 10.1109/LPT.2006.885210
[15]	Kim J Y, Kwon M K, Park I K, et al. Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide. Appl Phys Lett, 2008, 93 (2): 021121. doi: 10.1063/1.2953174
[16]	Jeon J W, Yum W S, Oh S, et al. Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes. Appl Phys Lett, 2012, 101 (2): 021115. doi: 10.1063/1.4737015
[17]	Zhou S, Liu X, Gao Y, et al. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts. Opt Express, 2017, 25 (22): 26615. doi: 10.1364/OE.25.026615
[18]	Lv J, Zheng C, Chen Q, et al. High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes. Phys Status Solidi A, 2016, 213 (12): 3150. doi: 10.1002/pssa.201600319
[19]	Khurgin J B. How to deal with the loss in plasmonics and metamaterials. Nat Nanotechnol, 2015, 10 (1): 2 doi: 10.1038/nnano.2014.310
[20]	Dai T, Zhang B, Kang X N, et al. Light extraction improvement from GaN-based light-emitting diodes with nano-patterned surface using anodic aluminum oxide template. IEEE Photonics Technol Lett, 2008, 20 (21-24): 1974. doi: 10.1109/LPT.2008.2005645
[21]	Pearton S J, Shul R J, Ren F. A review of dry etching of GaN and related materials. Mrs Internet Journal of Nitride Semiconductor Research, 2000, 5 (11): 1. doi: 10.1557/S1092578300000119
[22]	Evanoff D D, Chumanov G. Size-controlled synthesis of nanoparticles. 2. Measurement of extinction, scattering, and absorption cross sections. J Phys Chem B, 2004, 108 (37): 13957 doi: 10.1021/jp0475640
[23]	Stolz A, Ko S M, Patriarche G, et al. Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate. Appl Phys Lett, 2013, 102 (2): 021905. doi: 10.1063/1.4776671

Fig. 1. (Color online) The device structures of the (a) conventional plane LEDs and (b) LEDs with nanotextured reflectors.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Optical image and (b) scanning electron microscopy (SEM) image of an AAO template on the conventional plane LED wafer. The white region corresponds to the AAO template. (c) SEM images of nanotextured ITO layer and (d) nanotextured metallic reflector.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Light output power as a function of the injection current for conventional plane LEDs and LEDs with metal nanotextured reflectors. (b) I–V characteristics of LEDs with and without metal reflectors. The inset shows the local amplification of the I–V curves with the voltage below the turn-on voltage.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) The reflectivity spectrum and optical images of Ag and Al nanotextured reflectors. (b) Absorption spectrum of Ag and Al nanotextured reflectors simulated using three-dimensional finite-difference time-domain. (c) SP field distribution (|E|²) near the surface of the Ag and Al nanotextured reflectors. (d) Schematic of interaction between light and metallic reflector.

DownLoad: Full-Size Img PowerPoint

[1]	Amano H, Kito M, Hiramatsu K, et al. P-type conduction in mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI). Jpn J Appl Phys, 1989, 28 (12), L2112 doi: 10.1143/jjap.28.l2112
[2]	Nakamura S, Mukai T, Senoh M. High-power GAN p-n-junction blue-light-emitting diodes. Jp J Appl Phys, 1991, 30 (12A), L1998 doi: 10.1143/jjap.30.l1998
[3]	Krames M R, Shchekin O B, Mueller-Mach R, et al. Status and future of high-power light-emitting diodes for solid-state lighting. J Display Technol, 2007, 3 (2): 160 doi: 10.1109/JDT.2007.895339
[4]	Zhmakin A I. Enhancement of light extraction from light emitting diodes. Phys Rep-Rev Sec Phys Lett, 2011, 498 (4/5): 189 doi: 10.1016/j.physrep.2010.11.001
[5]	Wierer J J Jr, David A, Megens M M. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat Photonics, 2009, 3 (3): 163 doi: 10.1038/nphoton.2009.21
[6]	Koo W H, Jeong S M, Araoka F, et al. Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles. Nat Photonics, 2010, 4 (4): 222 doi: 10.1038/nphoton.2010.7
[7]	Wierer J J, Steigerwald D A, Krames M R, et al. High-power AlGaInN flip-chip light-emitting diodes. Appl Phys Lett, 2001, 78 (22): 3379 doi: 10.1063/1.1374499
[8]	Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett, 2004, 84 (6): 855 doi: 10.1063/1.1645992
[9]	Lee Y J, Hwang J M, Hsu T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technol Lett 2006, 18 (9-12): 1152 doi: 10.1109/LPT.2006.874737
[10]	Tadatomo K, Okagawa H, Ohuchi Y, et al. High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy. Jp J Appl Phys, 2001, 40 (6B), L583 doi: 10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2-G
[11]	Yamada M, Mitani T, Narukawa Y, et al. InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Jpn J Appl Phys, 2002, 41 (12B), L1431 doi: 10.1143/JJAP.41.L1431
[12]	Lee H Y, Lin Y C, Su Y T, et al. Performance improvement of GaN-based flip-chip white light-emitting diodes with diffused nanorod reflector and with ZnO nanorod antireflection layer. J Nanomater, 2014, 2014, 987479. doi: 10.1155/2014/987479
[13]	Yin Z, Liu X, Yao H, et al. Light extraction enhancement of GaN LEDs by hybrid ZnO micro-cylinders and nanorods array. IEEE Photonics Technol Lett, 2013, 25 (20): 1989. doi: 10.1109/LPT.2013.2279502
[14]	Xi J Q, Luo H, Pasquale A J, et al. Enhanced light extraction in GaInN light-emitting diode with pyramid reflector. IEEE Photonics Technol Lett 2006, 18 (21-24): 2347. doi: 10.1109/LPT.2006.885210
[15]	Kim J Y, Kwon M K, Park I K, et al. Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide. Appl Phys Lett, 2008, 93 (2): 021121. doi: 10.1063/1.2953174
[16]	Jeon J W, Yum W S, Oh S, et al. Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes. Appl Phys Lett, 2012, 101 (2): 021115. doi: 10.1063/1.4737015
[17]	Zhou S, Liu X, Gao Y, et al. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts. Opt Express, 2017, 25 (22): 26615. doi: 10.1364/OE.25.026615
[18]	Lv J, Zheng C, Chen Q, et al. High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes. Phys Status Solidi A, 2016, 213 (12): 3150. doi: 10.1002/pssa.201600319
[19]	Khurgin J B. How to deal with the loss in plasmonics and metamaterials. Nat Nanotechnol, 2015, 10 (1): 2 doi: 10.1038/nnano.2014.310
[20]	Dai T, Zhang B, Kang X N, et al. Light extraction improvement from GaN-based light-emitting diodes with nano-patterned surface using anodic aluminum oxide template. IEEE Photonics Technol Lett, 2008, 20 (21-24): 1974. doi: 10.1109/LPT.2008.2005645
[21]	Pearton S J, Shul R J, Ren F. A review of dry etching of GaN and related materials. Mrs Internet Journal of Nitride Semiconductor Research, 2000, 5 (11): 1. doi: 10.1557/S1092578300000119
[22]	Evanoff D D, Chumanov G. Size-controlled synthesis of nanoparticles. 2. Measurement of extinction, scattering, and absorption cross sections. J Phys Chem B, 2004, 108 (37): 13957 doi: 10.1021/jp0475640
[23]	Stolz A, Ko S M, Patriarche G, et al. Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate. Appl Phys Lett, 2013, 102 (2): 021905. doi: 10.1063/1.4776671

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Received: 22 October 2018 Revised: 21 December 2018 Online: Accepted Manuscript: 18 January 2019Uncorrected proof: 21 January 2019Published: 01 March 2019

Article Navigation > Journal of Semiconductors > 2019 > 40(3): 032301

Xuejiao Sun, Zhiguo Yu, Ning Zhang, Lei Liu, Junxi Wang, Jinmin Li, Yun Zhang. Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes[J]. Journal of Semiconductors, 2019, 40(3): 032301. doi: 10.1088/1674-4926/40/3/032301 ****X J Sun, Z G Yu, N Zhang, L Liu, J X Wang, J M Li, Y Zhang, Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes[J]. J. Semicond., 2019, 40(3): 032301. doi: 10.1088/1674-4926/40/3/032301.

Citation:

X J Sun, Z G Yu, N Zhang, L Liu, J X Wang, J M Li, Y Zhang, Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes[J]. J. Semicond., 2019, 40(3): 032301. doi: 10.1088/1674-4926/40/3/032301.

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Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

DOI: 10.1088/1674-4926/40/3/032301

Xuejiao Sun^1,2,
Zhiguo Yu^1,,
Ning Zhang^1,2,
Lei Liu^1,2,
Junxi Wang^1,2,
Jinmin Li^1,2,
Yun Zhang^1,2

1.
Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Corresponding author: Email: zgyu@semi.ac.cn
Received Date: 2018-10-22
Revised Date: 2018-12-21
Published Date: 2019-03-01

Abstract

Abstract

Metallic nanotextured reflectors have been widely used in light emitting diodes (LEDs) to enhance the light extraction efficiency. However, the light absorption loss for the metallic reflectors with nanotexture structure is often neglected. Here, the influence of absorption loss of metallic nanotextured reflectors on the LED optoelectronic properties were studied. Two commonly used metal reflectors Ag and Al were applied to green GaN-based LEDs. By applying a Ag nanotextured reflector, the light output power of the LEDs was enhanced by 78% due to the improved light extraction. For an Al nanotextured reflector, however, only a 6% enhancement of the light output power was achieved. By analyzing the metal absorption using finite-difference time-domain (FDTD) and the metal reflectivity spectrum, it is shown that the surface plasmon (SP) intrinsic absorption of metallic reflectors with nanotexture structure play an important role. This finding will aid the design of the high-performance metal nanotextured reflectors and optoelectronics devices.
- metallic nanotextured reflector,
- surface plasmon,
- metal loss,
- GaN,
- light emitting diodes

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References(23)

References

[1]	Amano H, Kito M, Hiramatsu K, et al. P-type conduction in mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI). Jpn J Appl Phys, 1989, 28 (12), L2112 doi: 10.1143/jjap.28.l2112
[2]	Nakamura S, Mukai T, Senoh M. High-power GAN p-n-junction blue-light-emitting diodes. Jp J Appl Phys, 1991, 30 (12A), L1998 doi: 10.1143/jjap.30.l1998
[3]	Krames M R, Shchekin O B, Mueller-Mach R, et al. Status and future of high-power light-emitting diodes for solid-state lighting. J Display Technol, 2007, 3 (2): 160 doi: 10.1109/JDT.2007.895339
[4]	Zhmakin A I. Enhancement of light extraction from light emitting diodes. Phys Rep-Rev Sec Phys Lett, 2011, 498 (4/5): 189 doi: 10.1016/j.physrep.2010.11.001
[5]	Wierer J J Jr, David A, Megens M M. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat Photonics, 2009, 3 (3): 163 doi: 10.1038/nphoton.2009.21
[6]	Koo W H, Jeong S M, Araoka F, et al. Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles. Nat Photonics, 2010, 4 (4): 222 doi: 10.1038/nphoton.2010.7
[7]	Wierer J J, Steigerwald D A, Krames M R, et al. High-power AlGaInN flip-chip light-emitting diodes. Appl Phys Lett, 2001, 78 (22): 3379 doi: 10.1063/1.1374499
[8]	Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett, 2004, 84 (6): 855 doi: 10.1063/1.1645992
[9]	Lee Y J, Hwang J M, Hsu T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technol Lett 2006, 18 (9-12): 1152 doi: 10.1109/LPT.2006.874737
[10]	Tadatomo K, Okagawa H, Ohuchi Y, et al. High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy. Jp J Appl Phys, 2001, 40 (6B), L583 doi: 10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2-G
[11]	Yamada M, Mitani T, Narukawa Y, et al. InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Jpn J Appl Phys, 2002, 41 (12B), L1431 doi: 10.1143/JJAP.41.L1431
[12]	Lee H Y, Lin Y C, Su Y T, et al. Performance improvement of GaN-based flip-chip white light-emitting diodes with diffused nanorod reflector and with ZnO nanorod antireflection layer. J Nanomater, 2014, 2014, 987479. doi: 10.1155/2014/987479
[13]	Yin Z, Liu X, Yao H, et al. Light extraction enhancement of GaN LEDs by hybrid ZnO micro-cylinders and nanorods array. IEEE Photonics Technol Lett, 2013, 25 (20): 1989. doi: 10.1109/LPT.2013.2279502
[14]	Xi J Q, Luo H, Pasquale A J, et al. Enhanced light extraction in GaInN light-emitting diode with pyramid reflector. IEEE Photonics Technol Lett 2006, 18 (21-24): 2347. doi: 10.1109/LPT.2006.885210
[15]	Kim J Y, Kwon M K, Park I K, et al. Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide. Appl Phys Lett, 2008, 93 (2): 021121. doi: 10.1063/1.2953174
[16]	Jeon J W, Yum W S, Oh S, et al. Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes. Appl Phys Lett, 2012, 101 (2): 021115. doi: 10.1063/1.4737015
[17]	Zhou S, Liu X, Gao Y, et al. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts. Opt Express, 2017, 25 (22): 26615. doi: 10.1364/OE.25.026615
[18]	Lv J, Zheng C, Chen Q, et al. High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes. Phys Status Solidi A, 2016, 213 (12): 3150. doi: 10.1002/pssa.201600319
[19]	Khurgin J B. How to deal with the loss in plasmonics and metamaterials. Nat Nanotechnol, 2015, 10 (1): 2 doi: 10.1038/nnano.2014.310
[20]	Dai T, Zhang B, Kang X N, et al. Light extraction improvement from GaN-based light-emitting diodes with nano-patterned surface using anodic aluminum oxide template. IEEE Photonics Technol Lett, 2008, 20 (21-24): 1974. doi: 10.1109/LPT.2008.2005645
[21]	Pearton S J, Shul R J, Ren F. A review of dry etching of GaN and related materials. Mrs Internet Journal of Nitride Semiconductor Research, 2000, 5 (11): 1. doi: 10.1557/S1092578300000119
[22]	Evanoff D D, Chumanov G. Size-controlled synthesis of nanoparticles. 2. Measurement of extinction, scattering, and absorption cross sections. J Phys Chem B, 2004, 108 (37): 13957 doi: 10.1021/jp0475640
[23]	Stolz A, Ko S M, Patriarche G, et al. Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate. Appl Phys Lett, 2013, 102 (2): 021905. doi: 10.1063/1.4776671

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

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