NEWS AND VIEWS
Corresponding author: Lun Dai, lundai@pku.edu.cn
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Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174 doi: 10.1038/d41586-018-05807-5
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Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464 doi: 10.1038/s41586-018-0854-z
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Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596 doi: 10.1038/ncomms14596
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Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601 doi: 10.1103/PhysRevLett.120.227601
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Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508 doi: 10.1021/acs.nanolett.7b02198
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Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885 doi: 10.1039/C8NR04422H
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Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182 doi: 10.1038/nmat4148
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Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24 doi: 10.1038/s41565-017-0010-1
|
| [1] |
Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174 doi: 10.1038/d41586-018-05807-5
|
| [2] |
Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464 doi: 10.1038/s41586-018-0854-z
|
| [3] |
Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596 doi: 10.1038/ncomms14596
|
| [4] |
Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601 doi: 10.1103/PhysRevLett.120.227601
|
| [5] |
Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508 doi: 10.1021/acs.nanolett.7b02198
|
| [6] |
Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885 doi: 10.1039/C8NR04422H
|
| [7] |
Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182 doi: 10.1038/nmat4148
|
| [8] |
Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24 doi: 10.1038/s41565-017-0010-1
|
Article views: 5218 Times PDF downloads: 153 Times Cited by: 0 Times
Received: Revised: Online: Accepted Manuscript: 18 May 2019Uncorrected proof: 31 May 2019Published: 05 June 2019
| Citation: |
Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402
****
L Dai, Room-temperature stable two-dimensional ferroelectric materials[J]. J. Semicond., 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402.
|
| [1] |
Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174 doi: 10.1038/d41586-018-05807-5
|
| [2] |
Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464 doi: 10.1038/s41586-018-0854-z
|
| [3] |
Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596 doi: 10.1038/ncomms14596
|
| [4] |
Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601 doi: 10.1103/PhysRevLett.120.227601
|
| [5] |
Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508 doi: 10.1021/acs.nanolett.7b02198
|
| [6] |
Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885 doi: 10.1039/C8NR04422H
|
| [7] |
Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182 doi: 10.1038/nmat4148
|
| [8] |
Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24 doi: 10.1038/s41565-017-0010-1
|
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