Defect engineering in two-dimensional materials

Jie Jiang; Zhenhua Ni

doi:10.1088/1674-4926/40/7/070403

J. Semicond. > 2019, Volume 40 > Issue 7 > 070403

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Defect engineering in two-dimensional materials

Jie Jiang and Zhenhua Ni

+ Author Affiliations

Corresponding author: Z H Ni, zhni@seu.edu.cn

DOI: 10.1088/1674-4926/40/7/070403

References

[1]	Hu Z, Wu Z, Han C, et al. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev, 2018, 47, 3100 doi: 10.1039/C8CS00024G
[2]	Lien D H, Uddin S Z, Yeh M, et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science, 2019, 364, 468 doi: 10.1126/science.aaw8053
[3]	Han H V, Lu A Y, Lu L S, et al. Photoluminescence enhancement and structure repairing of monolayer MoSe₂ by hydrohalic acid treatment. ACS Nano, 2016, 10, 1454 doi: 10.1021/acsnano.5b06960
[4]	Nan H, Wang Z, Wang W, et al. Strong photoluminescence enhancement of MoS₂ through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738 doi: 10.1021/nn500532f
[5]	Yu Z, Pan Y, Shen Y, et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun, 2014, 5, 5290 doi: 10.1038/ncomms6290
[6]	Zhang X, Liao Q, Liu S, et al. Poly (4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS₂ homojunction photodiode. Nat Commun, 2017, 8, 15881 doi: 10.1038/ncomms15881
[7]	Jiang J, Ling C, Xu T, et al. Defect engineering for modulating the trap states in 2D photoconductors. Adv Mater, 2018, 30, 1804332 doi: 10.1002/adma.v30.40
[8]	Tosun M, Chan L, Amani M, et al. Air-stable n-doping of WSe₂ by anion vacancy formation with mild plasma treatment. ACS Nano, 2016, 10, 6853 doi: 10.1021/acsnano.6b02521
[9]	Giannazzo F, Fisichella G, Greco G, et al. Ambipolar MoS₂ transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization. ACS Appl Mater Inter, 2017, 9, 23164 doi: 10.1021/acsami.7b04919

Fig. 1. (Color online) Schematic diagram of carrier recombination and trapping kinetics (left) and transient response of as-prepared and H₂PP decorated ReS₂ photoconductor (right)^[7].

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[1]	Hu Z, Wu Z, Han C, et al. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev, 2018, 47, 3100 doi: 10.1039/C8CS00024G
[2]	Lien D H, Uddin S Z, Yeh M, et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science, 2019, 364, 468 doi: 10.1126/science.aaw8053
[3]	Han H V, Lu A Y, Lu L S, et al. Photoluminescence enhancement and structure repairing of monolayer MoSe₂ by hydrohalic acid treatment. ACS Nano, 2016, 10, 1454 doi: 10.1021/acsnano.5b06960
[4]	Nan H, Wang Z, Wang W, et al. Strong photoluminescence enhancement of MoS₂ through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738 doi: 10.1021/nn500532f
[5]	Yu Z, Pan Y, Shen Y, et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun, 2014, 5, 5290 doi: 10.1038/ncomms6290
[6]	Zhang X, Liao Q, Liu S, et al. Poly (4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS₂ homojunction photodiode. Nat Commun, 2017, 8, 15881 doi: 10.1038/ncomms15881
[7]	Jiang J, Ling C, Xu T, et al. Defect engineering for modulating the trap states in 2D photoconductors. Adv Mater, 2018, 30, 1804332 doi: 10.1002/adma.v30.40
[8]	Tosun M, Chan L, Amani M, et al. Air-stable n-doping of WSe₂ by anion vacancy formation with mild plasma treatment. ACS Nano, 2016, 10, 6853 doi: 10.1021/acsnano.6b02521
[9]	Giannazzo F, Fisichella G, Greco G, et al. Ambipolar MoS₂ transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization. ACS Appl Mater Inter, 2017, 9, 23164 doi: 10.1021/acsami.7b04919