High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots

Feifan Xu; Xu Cen; Bin Liu; Danbei Wang; Tao Tao; Ting Zhi; Qi Wang; Zili Xie; Yugang Zhou; Youdou Zheng; Rong Zhang

doi:10.1088/1674-4926/41/3/032301

J. Semicond. > 2020, Volume 41 > Issue 3 > 032301

ARTICLES

High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots

Feifan Xu^{1, 2}, Xu Cen^{1, 2}, Bin Liu^{1, 2,}, Danbei Wang^{1, 2}, Tao Tao^{1, 2}, Ting Zhi³, Qi Wang^{1, 2}, Zili Xie^{1, 2}, Yugang Zhou^{1, 2}, Youdou Zheng^{1, 2} and Rong Zhang^{1, 2, 4}

+ Author Affiliations

Corresponding author: Bin Liu, E-mail address: bliu@nju.edu.cn

DOI: 10.1088/1674-4926/41/3/032301

Abstract: Hybrid white micro-pillar structure light emitting diodes (LEDs) have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS ((CuInS₂-ZnS)/ZnS) core/shell quantum dots. The fabricated hybrid white micro-LEDs have good electrical properties, which are manifested in relatively low turn-on voltage and reverse leakage current. High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization, in which the corresponding color coordinates are calculated to be (0.3303, 0.3501) and the calculated color temperature is 5596 K. This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays, bioinstrumentation and visible light communication.

Key words: GaN, hybrid white micro-LEDs, quantum dots

References

[1]	Nakamura S, Mukai T, Senoh M, et al. Candela-class high-brightness ingan/algan double-heterostructure blue-light-emitting diodes. Appl Phys Lett, 1994, 64(13), 1687 doi: 10.1063/1.111832
[2]	Jiang H X, Lin J Y. Nitride micro-LEDs and beyond — a decade progress review. Opt Express, 2013, 21(9), A475 doi: 10.1364/OE.21.00A475
[3]	Li J M, Liu Z, Liu Z Q, et al. Advances and prospects in nitrides based light-emitting-diodes. J Semicond, 2016, 37(6), 061001 doi: 10.1088/1674-4926/37/6/061001
[4]	McKendry J J D, Massoubre D, Zhang S, et al. Visible-light communications using a CMOS-controlled micro-light-emitting-diode array. J Lightwave Technol, 2012, 30(1), 61 doi: 10.1109/JLT.2011.2175090
[5]	Qian H, Zhao S, Cai S Z, et al. Digitally controlled micro-LED array for linear visible light communication systems. IEEE Photonics J, 2015, 7(3), 7901508 doi: 10.1109/JPHOT.2015.2424398
[6]	Liu W R, Yeh C W, Huang C H, et al. (Ba, Sr)Y₂Si₂Al₂O₂N₅: Eu₂₊: a novel near-ultraviolet converting green phosphor for white light-emitting diodes. J Mater Chem, 2011, 21(11), 3740 doi: 10.1039/c0jm03573d
[7]	Nguyen H P T, Cui K, Zhang S, et al. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes. Nano Lett, 2012, 12(3), 1317 doi: 10.1021/nl203860b
[8]	Zhuang Z, Guo X, Liu B, et al. High color rendering index hybrid III-nitride/nanocrystals white light-emitting diodes. Adv Funct Mater, 2016, 26(1), 36 doi: 10.1002/adfm.201502870
[9]	Lin T H, Wang S J, Tu Y C, et al. Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes. Solid-State Electron, 2015, 107, 30 doi: 10.1016/j.sse.2015.02.021
[10]	Tsai M A, Yu P, Chao C L, et al. Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays. IEEE Photonics Technol Lett, 2009, 21(1–4), 257 doi: 10.1109/lpt.2008.2010556
[11]	Tan G, Huang Y, Li M C, et al. High dynamic range liquid crystal displays with a mini-LED backlight. Opt Express, 2018, 26(13), 16572 doi: 10.1364/OE.26.016572
[12]	Gossler C, Bierbrauer C, Moser R, et al. GaN-based micro-LED arrays on flexible substrates for optical cochlear implants. J Phys D, 2014, 47(20), 205401 doi: 10.1088/0022-3727/47/20/205401
[13]	Qi C L, Huang Y, Zhan T, et al. Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure. J Semicond, 2017, 38(8), 084005 doi: 10.1088/1674-4926/38/8/084005
[14]	Smith R, Liu B, Bai J, et al. Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters. Nano Lett, 2013, 13(7), 3042 doi: 10.1021/nl400597d
[15]	Sun Q, Yan W, Feng M, et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J Semicond, 2016, 37(4), 044006 doi: 10.1088/1674-4926/37/4/044006
[16]	Chen W, Hu G, Lin J, et al. High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer. Appl Phys Express, 2015, 8(3), 032102 doi: 10.7567/APEX.8.032102
[17]	Li G, Wang W, Yang W, et al. GaN-based light-emitting diodes on various substrates: a critical review. Rep Prog Phys, 2016, 79(5), 056501 doi: 10.1088/0034-4885/79/5/056501

Fig. 1. (Color online) (a) Epitaxial structure of blue LED. (b) The micron-pillar array structures after lithography and ICP etching. (c) N-type and P-type Cr/Au electrodes are manufactured in only one step. (d) Micron-pillar structures with the CIS ((CuInS₂-ZnS)/ZnS) core-shell quantum dots.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Bird’s eye view microscope image of the blue micron-pillar LED array. (b) The enlarged picture of micron-pillar structures. (c) SEM image of the blue micron-pillar LED array. (d) The cross-sectional view SEM image of blue micron-pillar LED array.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) I–V characteristics of one hybrid micro-LED. The inset is the leakage I–V curve in semi-log scale. (b) The EL spectra of the hybrid white micro-LED array at the different injection current density. (c) The picture of hybrid white micro-LED array emission at the injection current of 0.1 mA. (d) The picture of hybrid white micro-LED array emission at the injection current of 1 mA.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) The PL spectra of CIS quantum dots and one pixel in the hybrid white micro-LEDs array. (b) The locations of hybrid white LEDs in the CIE 1931 chromaticity diagram.

DownLoad: Full-Size Img PowerPoint

[1]	Nakamura S, Mukai T, Senoh M, et al. Candela-class high-brightness ingan/algan double-heterostructure blue-light-emitting diodes. Appl Phys Lett, 1994, 64(13), 1687 doi: 10.1063/1.111832
[2]	Jiang H X, Lin J Y. Nitride micro-LEDs and beyond — a decade progress review. Opt Express, 2013, 21(9), A475 doi: 10.1364/OE.21.00A475
[3]	Li J M, Liu Z, Liu Z Q, et al. Advances and prospects in nitrides based light-emitting-diodes. J Semicond, 2016, 37(6), 061001 doi: 10.1088/1674-4926/37/6/061001
[4]	McKendry J J D, Massoubre D, Zhang S, et al. Visible-light communications using a CMOS-controlled micro-light-emitting-diode array. J Lightwave Technol, 2012, 30(1), 61 doi: 10.1109/JLT.2011.2175090
[5]	Qian H, Zhao S, Cai S Z, et al. Digitally controlled micro-LED array for linear visible light communication systems. IEEE Photonics J, 2015, 7(3), 7901508 doi: 10.1109/JPHOT.2015.2424398
[6]	Liu W R, Yeh C W, Huang C H, et al. (Ba, Sr)Y₂Si₂Al₂O₂N₅: Eu₂₊: a novel near-ultraviolet converting green phosphor for white light-emitting diodes. J Mater Chem, 2011, 21(11), 3740 doi: 10.1039/c0jm03573d
[7]	Nguyen H P T, Cui K, Zhang S, et al. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes. Nano Lett, 2012, 12(3), 1317 doi: 10.1021/nl203860b
[8]	Zhuang Z, Guo X, Liu B, et al. High color rendering index hybrid III-nitride/nanocrystals white light-emitting diodes. Adv Funct Mater, 2016, 26(1), 36 doi: 10.1002/adfm.201502870
[9]	Lin T H, Wang S J, Tu Y C, et al. Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes. Solid-State Electron, 2015, 107, 30 doi: 10.1016/j.sse.2015.02.021
[10]	Tsai M A, Yu P, Chao C L, et al. Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays. IEEE Photonics Technol Lett, 2009, 21(1–4), 257 doi: 10.1109/lpt.2008.2010556
[11]	Tan G, Huang Y, Li M C, et al. High dynamic range liquid crystal displays with a mini-LED backlight. Opt Express, 2018, 26(13), 16572 doi: 10.1364/OE.26.016572
[12]	Gossler C, Bierbrauer C, Moser R, et al. GaN-based micro-LED arrays on flexible substrates for optical cochlear implants. J Phys D, 2014, 47(20), 205401 doi: 10.1088/0022-3727/47/20/205401
[13]	Qi C L, Huang Y, Zhan T, et al. Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure. J Semicond, 2017, 38(8), 084005 doi: 10.1088/1674-4926/38/8/084005
[14]	Smith R, Liu B, Bai J, et al. Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters. Nano Lett, 2013, 13(7), 3042 doi: 10.1021/nl400597d
[15]	Sun Q, Yan W, Feng M, et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J Semicond, 2016, 37(4), 044006 doi: 10.1088/1674-4926/37/4/044006
[16]	Chen W, Hu G, Lin J, et al. High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer. Appl Phys Express, 2015, 8(3), 032102 doi: 10.7567/APEX.8.032102
[17]	Li G, Wang W, Yang W, et al. GaN-based light-emitting diodes on various substrates: a critical review. Rep Prog Phys, 2016, 79(5), 056501 doi: 10.1088/0034-4885/79/5/056501

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Received: 03 October 2019 Revised: 25 October 2019 Online: Accepted Manuscript: 10 January 2020Uncorrected proof: 15 January 2020Published: 01 March 2020

Article Navigation > Journal of Semiconductors > 2020 > 41(3): 032301

Feifan Xu, Xu Cen, Bin Liu, Danbei Wang, Tao Tao, Ting Zhi, Qi Wang, Zili Xie, Yugang Zhou, Youdou Zheng, Rong Zhang. High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots[J]. Journal of Semiconductors, 2020, 41(3): 032301. doi: 10.1088/1674-4926/41/3/032301 ****F F Xu, X Cen, B Liu, D B Wang, T Tao, T Zhi, Q Wang, Z L Xie, Y G Zhou, Y D Zheng, R Zhang, High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots[J]. J. Semicond., 2020, 41(3): 032301. doi: 10.1088/1674-4926/41/3/032301.

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F F Xu, X Cen, B Liu, D B Wang, T Tao, T Zhi, Q Wang, Z L Xie, Y G Zhou, Y D Zheng, R Zhang, High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots[J]. J. Semicond., 2020, 41(3): 032301. doi: 10.1088/1674-4926/41/3/032301.

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High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots

DOI: 10.1088/1674-4926/41/3/032301

Feifan Xu^1,2,
Xu Cen^1,2,
Bin Liu^1,2,,
Danbei Wang^1,2,
Tao Tao^1,2,
Ting Zhi³,
Qi Wang^1,2,
Zili Xie^1,2,
Yugang Zhou^1,2,
Youdou Zheng^1,2,
Rong Zhang^1,2,4

1.
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
2.
Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210023, China
3.
College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
4.
Xiamen University, Xiamen 316005, China

More Information

Corresponding author: E-mail address: bliu@nju.edu.cn
Received Date: 2019-10-03
Revised Date: 2019-10-25
Published Date: 2020-03-01

Abstract

Abstract

Hybrid white micro-pillar structure light emitting diodes (LEDs) have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS ((CuInS₂-ZnS)/ZnS) core/shell quantum dots. The fabricated hybrid white micro-LEDs have good electrical properties, which are manifested in relatively low turn-on voltage and reverse leakage current. High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization, in which the corresponding color coordinates are calculated to be (0.3303, 0.3501) and the calculated color temperature is 5596 K. This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays, bioinstrumentation and visible light communication.
- GaN,
- hybrid white micro-LEDs,
- quantum dots

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References(17)

References

[1]	Nakamura S, Mukai T, Senoh M, et al. Candela-class high-brightness ingan/algan double-heterostructure blue-light-emitting diodes. Appl Phys Lett, 1994, 64(13), 1687 doi: 10.1063/1.111832
[2]	Jiang H X, Lin J Y. Nitride micro-LEDs and beyond — a decade progress review. Opt Express, 2013, 21(9), A475 doi: 10.1364/OE.21.00A475
[3]	Li J M, Liu Z, Liu Z Q, et al. Advances and prospects in nitrides based light-emitting-diodes. J Semicond, 2016, 37(6), 061001 doi: 10.1088/1674-4926/37/6/061001
[4]	McKendry J J D, Massoubre D, Zhang S, et al. Visible-light communications using a CMOS-controlled micro-light-emitting-diode array. J Lightwave Technol, 2012, 30(1), 61 doi: 10.1109/JLT.2011.2175090
[5]	Qian H, Zhao S, Cai S Z, et al. Digitally controlled micro-LED array for linear visible light communication systems. IEEE Photonics J, 2015, 7(3), 7901508 doi: 10.1109/JPHOT.2015.2424398
[6]	Liu W R, Yeh C W, Huang C H, et al. (Ba, Sr)Y₂Si₂Al₂O₂N₅: Eu₂₊: a novel near-ultraviolet converting green phosphor for white light-emitting diodes. J Mater Chem, 2011, 21(11), 3740 doi: 10.1039/c0jm03573d
[7]	Nguyen H P T, Cui K, Zhang S, et al. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes. Nano Lett, 2012, 12(3), 1317 doi: 10.1021/nl203860b
[8]	Zhuang Z, Guo X, Liu B, et al. High color rendering index hybrid III-nitride/nanocrystals white light-emitting diodes. Adv Funct Mater, 2016, 26(1), 36 doi: 10.1002/adfm.201502870
[9]	Lin T H, Wang S J, Tu Y C, et al. Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes. Solid-State Electron, 2015, 107, 30 doi: 10.1016/j.sse.2015.02.021
[10]	Tsai M A, Yu P, Chao C L, et al. Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays. IEEE Photonics Technol Lett, 2009, 21(1–4), 257 doi: 10.1109/lpt.2008.2010556
[11]	Tan G, Huang Y, Li M C, et al. High dynamic range liquid crystal displays with a mini-LED backlight. Opt Express, 2018, 26(13), 16572 doi: 10.1364/OE.26.016572
[12]	Gossler C, Bierbrauer C, Moser R, et al. GaN-based micro-LED arrays on flexible substrates for optical cochlear implants. J Phys D, 2014, 47(20), 205401 doi: 10.1088/0022-3727/47/20/205401
[13]	Qi C L, Huang Y, Zhan T, et al. Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure. J Semicond, 2017, 38(8), 084005 doi: 10.1088/1674-4926/38/8/084005
[14]	Smith R, Liu B, Bai J, et al. Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters. Nano Lett, 2013, 13(7), 3042 doi: 10.1021/nl400597d
[15]	Sun Q, Yan W, Feng M, et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J Semicond, 2016, 37(4), 044006 doi: 10.1088/1674-4926/37/4/044006
[16]	Chen W, Hu G, Lin J, et al. High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer. Appl Phys Express, 2015, 8(3), 032102 doi: 10.7567/APEX.8.032102
[17]	Li G, Wang W, Yang W, et al. GaN-based light-emitting diodes on various substrates: a critical review. Rep Prog Phys, 2016, 79(5), 056501 doi: 10.1088/0034-4885/79/5/056501

High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots

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