Fig. 1.
(Color online) A typical P–I–V curves of the fabricated laser diodes.
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| Citation: |
Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song. High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. Journal of Semiconductors, 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901
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Z Q Ren, Q M Li, B Li, K C Song, High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. J. Semicond., 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901.
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High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W
DOI: 10.1088/1674-4926/41/3/032901
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Abstract
A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance. The laser chips were p-side-down mounted on the AlN sub-mount, and then tested at continuous wave (CW) operation with the heat-sink temperature setting to 25 °C using a thermoelectric cooler (TEC). As high as 60.5% of the wall-plug efficiency (WPE) was achieved at the injection current of 11 A. The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12 °C. Accelerated life-time test showed that the laser diodes had lifetimes of over 62 111 h operating at rated power of 10 W. -
References
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