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>35% 5-junction space solar cells based on the direct bonding technique

Xinyi Li, Ge Li, Hongbo Lu and Wei Zhang

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 Corresponding author: Wei Zhang, ageli@163.net

DOI: 10.1088/1674-4926/42/12/122701

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Abstract: Multijunction solar cells are the highest efficiency photovoltaic devices yet demonstrated for both space and terrestrial applications. In recent years five-junction cells based on the direct semiconductor bonding technique (SBT), demonstrates space efficiencies >35% and presents application potentials. In this paper, the major challenges for fabricating SBT 5J cells and their appropriate strategies involving structure tunning, band engineering and material tailoring are stated, and 4-cm2 35.4% (AM0, one sun) 5J SBT cells are presented. Further efforts on detailed optical managements are required to improve the current generating and matching in subcells, to achieve efficiencies 36%–37%, or above.

Key words: III–V, multijunction, solar cells, high efficiency, semiconductor bonding



[1]
Chiu P T, Law D C, Singer S B, et al. High performance 5J and 6J direct bonded (SBT) space solar cells. 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 1
[2]
Chiu P T, Law D C, Woo R L, et al. 35.8% space and 38.8% terrestrial 5J direct bonded cells. 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, 0011
[3]
Chiu P T, Law D C, Woo R L, et al. Direct semiconductor bonded 5J cell for space and terrestrial applications. IEEE J Photovolt, 2014, 4, 493 doi: 10.1109/JPHOTOV.2013.2279336
[4]
Geisz J F, France R M, Schulte K L, et al. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration. Nat Energy, 2020, 5, 326 doi: 10.1038/s41560-020-0598-5
[5]
Geisz J F, Steiner M A, Jain N, et al. Building a six-junction inverted metamorphic concentrator solar cell. IEEE J Photovolt, 2018, 8, 626 doi: 10.1109/JPHOTOV.2017.2778567
[6]
King R R, Bhusari D, Boca A, et al. Band gap-voltage offset and energy production in next-generation multijunction solar cells. Prog Photovolt: Res Appl, 2011, 19, 797 doi: 10.1002/pip.1044
[7]
Tayagaki T, Reichmuth S K, Helmers H, et al. Transient analysis of luminescent coupling effects in multi-junction solar cells. J Appl Phys, 2018, 124, 183103 doi: 10.1063/1.5046543
[8]
Tayagaki T, Oshima R, Shoji Y, et al. Luminescence effects on subcell current-voltage analysis in InGaP/GaAs tandem solar cells. J Photonics Energy, 2020, 10, 025504 doi: 10.1117/1.JPE.10.025504
[9]
Lim S H, Li J J, Steenbergen E H, et al. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement. Prog Photovolt: Res Appl, 2013, 21, 344 doi: 10.1002/pip.1215
[10]
Hamada H, Shono M, Honda S, et al. AlGaInP visible laser diodes grown on misoriented substrates. IEEE J Quantum Electron, 1991, 27, 1483 doi: 10.1109/3.89967
[11]
Wu M C, Lin J F, Jou M J, et al. High reliability of AlGaInP LED's with efficient transparent contacts for spatially uniform light emission. IEEE Electron Device Lett, 1995, 16, 482 doi: 10.1109/55.468274
[12]
Zaknoune M, Schuler O, Mollot F, et al. 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy. Electron Lett, 1999, 35, 1776 doi: 10.1049/el:19991196
[13]
Heckelmann S, Lackner D, Karcher C, et al. Investigations on AlxGa1–xAs solar cells grown by MOVPE. IEEE J Photovoltaics, 2015, 5, 446 doi: 10.1109/JPHOTOV.2014.2367869
[14]
Steiner M A, France R M, Perl E E, et al. Reverse heterojunction (Al)GaInP solar cells for improved efficiency at concentration. IEEE J Photovolt, 2020, 10, 487 doi: 10.1109/JPHOTOV.2019.2957644
[15]
Lu H B, Li X Y, Zhang W, et al. MOVPE grown 1.0 eV InGaAsP solar cells with bandgap-voltage offset near to ideal radiative recombination limit. Sol Energy Mater Sol Cells, 2019, 196, 65 doi: 10.1016/j.solmat.2019.03.032
[16]
Lu H B, Li G, Li X Y, et al. Small lattice-mismatched InGaAsP: Material characterization and application in solar cells. Chin J Lumin, 2020, 41, 351 doi: 10.3788/fgxb20204104.0351
[17]
Onabe K. Calculation of miscibility gap in quaternary InGaPAs with strictly regular solution approximation. Jpn J Appl Phys, 1982, 21, 797 doi: 10.1143/JJAP.21.797
[18]
Ono K, Takemi M. Anomalous behavior of phase separation of InGaAsP on GaAs substrates grown by MOVPE. J Cryst Growth, 2007, 298, 41 doi: 10.1016/j.jcrysgro.2006.10.065
[19]
LaPierre R R, Okada T, Robinson B J, et al. Spinodal-like decomposition of InGaAsP(100) InP grown by gas source molecular beam epitaxy. J Cryst Growth, 1995, 155, 1 doi: 10.1016/0022-0248(95)00123-9
[20]
Ram R J, Dudley J J, Bowers J E, et al. GaAs to InP wafer fusion. J Appl Phys, 1995, 78, 4227 doi: 10.1063/1.359884
Fig. 1.  (Color online) Fabrication scheme of SBT 5J cells. The arrow indicates the bonding interface.

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Fig. 2.  (Color online) Predicted efficiencies of T3Js containing a GaAs subcell (a) without and (b) with LC. LC coefficient is set to 0.93 during calculation.

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Fig. 3.  (Color online) Calculated band diagram for 2.10/1.72/1.42 eV T3J.

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Fig. 4.  Spinodal isotherms for InGaAsP quaternary. The thick solid line indicates compositions lattice-matched to InP.

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Fig. 5.  (Color online) Band profile of (a) AlGaInP/AlGaAs tunnel diode, and (b) electrical field and (c, d) tunneling probability distribution in the junction.

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Fig. 6.  (Color online) Schematic device structure after the bonding process.

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Fig. 7.  (Color online) Measured surface reflection and its fitting results.

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Fig. 8.  (Color online) J–V curves for the representative subcells ((a)12-cm2 T3J cell, (b) 4-cm2 B2J cell), and (c) J–V curve and (d) corrected QE for the best representative 4-cm2 SBT 5J cell.

DownLoad: Full-Size Img PowerPoint
[1]
Chiu P T, Law D C, Singer S B, et al. High performance 5J and 6J direct bonded (SBT) space solar cells. 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 1
[2]
Chiu P T, Law D C, Woo R L, et al. 35.8% space and 38.8% terrestrial 5J direct bonded cells. 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, 0011
[3]
Chiu P T, Law D C, Woo R L, et al. Direct semiconductor bonded 5J cell for space and terrestrial applications. IEEE J Photovolt, 2014, 4, 493 doi: 10.1109/JPHOTOV.2013.2279336
[4]
Geisz J F, France R M, Schulte K L, et al. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration. Nat Energy, 2020, 5, 326 doi: 10.1038/s41560-020-0598-5
[5]
Geisz J F, Steiner M A, Jain N, et al. Building a six-junction inverted metamorphic concentrator solar cell. IEEE J Photovolt, 2018, 8, 626 doi: 10.1109/JPHOTOV.2017.2778567
[6]
King R R, Bhusari D, Boca A, et al. Band gap-voltage offset and energy production in next-generation multijunction solar cells. Prog Photovolt: Res Appl, 2011, 19, 797 doi: 10.1002/pip.1044
[7]
Tayagaki T, Reichmuth S K, Helmers H, et al. Transient analysis of luminescent coupling effects in multi-junction solar cells. J Appl Phys, 2018, 124, 183103 doi: 10.1063/1.5046543
[8]
Tayagaki T, Oshima R, Shoji Y, et al. Luminescence effects on subcell current-voltage analysis in InGaP/GaAs tandem solar cells. J Photonics Energy, 2020, 10, 025504 doi: 10.1117/1.JPE.10.025504
[9]
Lim S H, Li J J, Steenbergen E H, et al. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement. Prog Photovolt: Res Appl, 2013, 21, 344 doi: 10.1002/pip.1215
[10]
Hamada H, Shono M, Honda S, et al. AlGaInP visible laser diodes grown on misoriented substrates. IEEE J Quantum Electron, 1991, 27, 1483 doi: 10.1109/3.89967
[11]
Wu M C, Lin J F, Jou M J, et al. High reliability of AlGaInP LED's with efficient transparent contacts for spatially uniform light emission. IEEE Electron Device Lett, 1995, 16, 482 doi: 10.1109/55.468274
[12]
Zaknoune M, Schuler O, Mollot F, et al. 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy. Electron Lett, 1999, 35, 1776 doi: 10.1049/el:19991196
[13]
Heckelmann S, Lackner D, Karcher C, et al. Investigations on AlxGa1–xAs solar cells grown by MOVPE. IEEE J Photovoltaics, 2015, 5, 446 doi: 10.1109/JPHOTOV.2014.2367869
[14]
Steiner M A, France R M, Perl E E, et al. Reverse heterojunction (Al)GaInP solar cells for improved efficiency at concentration. IEEE J Photovolt, 2020, 10, 487 doi: 10.1109/JPHOTOV.2019.2957644
[15]
Lu H B, Li X Y, Zhang W, et al. MOVPE grown 1.0 eV InGaAsP solar cells with bandgap-voltage offset near to ideal radiative recombination limit. Sol Energy Mater Sol Cells, 2019, 196, 65 doi: 10.1016/j.solmat.2019.03.032
[16]
Lu H B, Li G, Li X Y, et al. Small lattice-mismatched InGaAsP: Material characterization and application in solar cells. Chin J Lumin, 2020, 41, 351 doi: 10.3788/fgxb20204104.0351
[17]
Onabe K. Calculation of miscibility gap in quaternary InGaPAs with strictly regular solution approximation. Jpn J Appl Phys, 1982, 21, 797 doi: 10.1143/JJAP.21.797
[18]
Ono K, Takemi M. Anomalous behavior of phase separation of InGaAsP on GaAs substrates grown by MOVPE. J Cryst Growth, 2007, 298, 41 doi: 10.1016/j.jcrysgro.2006.10.065
[19]
LaPierre R R, Okada T, Robinson B J, et al. Spinodal-like decomposition of InGaAsP(100) InP grown by gas source molecular beam epitaxy. J Cryst Growth, 1995, 155, 1 doi: 10.1016/0022-0248(95)00123-9
[20]
Ram R J, Dudley J J, Bowers J E, et al. GaAs to InP wafer fusion. J Appl Phys, 1995, 78, 4227 doi: 10.1063/1.359884

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    Received: 16 April 2021 Revised: 30 May 2021 Online: Accepted Manuscript: 30 June 2021Uncorrected proof: 06 July 2021Published: 03 December 2021

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      Article Navigation >  Journal of Semiconductors  > 2021  >  42(12): 122701
      Xinyi Li, Ge Li, Hongbo Lu, Wei Zhang. >35% 5-junction space solar cells based on the direct bonding technique[J]. Journal of Semiconductors, 2021, 42(12): 122701. doi: 10.1088/1674-4926/42/12/122701 ****X Y Li, G Li, H B Lu, W Zhang, >35% 5-junction space solar cells based on the direct bonding technique[J]. J. Semicond., 2021, 42(12): 122701. doi: 10.1088/1674-4926/42/12/122701.
      Citation:
      Xinyi Li, Ge Li, Hongbo Lu, Wei Zhang. >35% 5-junction space solar cells based on the direct bonding technique[J]. Journal of Semiconductors, 2021, 42(12): 122701. doi: 10.1088/1674-4926/42/12/122701 ****
      X Y Li, G Li, H B Lu, W Zhang, >35% 5-junction space solar cells based on the direct bonding technique[J]. J. Semicond., 2021, 42(12): 122701. doi: 10.1088/1674-4926/42/12/122701.
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      >35% 5-junction space solar cells based on the direct bonding technique

      DOI: 10.1088/1674-4926/42/12/122701

      • Shanghai Institute of Space Power-sources, Shanghai 200245, China

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      • Xinyi Li：received his PhD in Material Physics and Chemistry from the University of Science and Technology of China. Now he works in the Shanghai Institute of Space Power-Sources as a senior engineer. His research focuses on space energy harvesting, including next-generation high-efficiency photovoltaics, III–V epitaxy, and advanced process
      • Ge Li：received his BS and MS degrees in Environmental Science and Engineering from Shanghai Jiao Tong University in 2015 and 2018. He is currently working at the Shanghai Institute of Space Power-Sources. His research interests are mainly engaged in multijunction solar cells
      • Hongbo Lu：received his PhD in Microelectronics and Solid-State Electronics from University of Chinese Academy of Sciences. Now he works in the Shanghai Institute of Space Power-Sources as a senior engineer, mainly engaged in the development of optoelectronic devices based on group III–V material, with rich experience in solar cells and infrared detectors
      • Wei Zhang：received his BS degree from the School of Material Science, Wuhan University of Science and Technology in 1999, and PhD degree in Micro-electronics and Solid-State Electronics from the Institute of Semiconductors, Chinese Academy of Sciences, in 2004. Following postdoc work on single photon sources at the Hokkaido University in Japan, he joined the Shanghai Institute of Space Power-Sources in 2005. His research interests include the physics of opto-electronic devices, software development, etc
      • Corresponding author: ageli@163.net
      • Received Date: 2021-04-16
      • Revised Date: 2021-05-30
      • Published Date: 2021-12-10

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