The effect of <i>γ</i>-ray irradiation on the SOT magnetic films and Hall devices

Tengzhi Yang; Yan Cui; Yanru Li; Meiyin Yang; Jing Xu; Huiming He; Shiyu Wang; Jing Zhang; Jun Luo

doi:10.1088/1674-4926/42/2/024102

J. Semicond. > 2021, Volume 42 > Issue 2 > 024102

ARTICLES

The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

Tengzhi Yang^{1, 2}, Yan Cui^1,, Yanru Li^{1, 2}, Meiyin Yang¹, Jing Xu¹, Huiming He³, Shiyu Wang³, Jing Zhang^{2, 3,} and Jun Luo^{1, 2}

+ Author Affiliations

Corresponding author: Yan Cui, cuiyan@ime.ac.cn; Jing Zhang, zhangj@ncut.edu.cn

DOI: 10.1088/1674-4926/42/2/024102

Abstract: Magnetoresistive random access memories (MRAMs) have drawn the attention of radiation researchers due to their potential high radiation tolerance. In particular, spin-orbit torque MRAM (SOT-MRAM) has the best performance on endurance and access speed, which is considered to be one of the candidates to replace SRAM for space application. However, little attention has been given to the γ-ray irradiation effect on the SOT-MRAM device yet. Here, we report the Co-60 irradiation results for both SOT (spin-orbit torque) magnetic films and SOT-Hall devices with the same stacks. The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad (Si) while the magnetoelectronic properties of SOT-Hall devices exhibit a reversible change behavior during the radiation. We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon. Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.

Key words: SOT-MRAM, γ-ray irradiation, TID effect, anomalous Hall effect

References

[1]	Hu J M, Chen L Q, Nan C W. Multiferroic heterostructures integrating ferroelectric and magnetic materials. Adv Mater, 2016, 28(1), 15 doi: 10.1002/adma.201502824
[2]	Perrissin N, Lequeux S, Strelkov N, et al. A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy. Nanoscale, 2018, 10(25), 12187 doi: 10.1039/C8NR01365A
[3]	Sato H, Ikeda S, Ohno H. Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm. Jpn J Appl Phys, 2017, 56(8), 9 doi: 10.7567/JJAP.56.0802A6
[4]	Gerardin S, Paccagnella A. Present and future non-volatile memories for space. IEEE Trans Nucl Sci, 2010, 57(6), 3016 doi: 10.1109/TNS.2010.2084101
[5]	Cui Y, Yang L, Gao T, et al. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices. Chin Phys B, 2017, 26(8), 087501 doi: 10.1088/1674-1056/26/8/087501
[6]	Arias S I R, Muñoz D R, Cardoso S, et al. Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors. Sens Actuators A, 2015, 225, 119 doi: 10.1016/j.sna.2015.01.021
[7]	Garello K, Avci C O, Miron I M, et al. Ultrafast magnetization switching by spin-orbit torques. Appl Phys Lett, 2014, 105(21), 5 doi: 10.1063/1.4902443
[8]	Liu L Q, Lee O J, Gudmundsen T J, et al. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys Rev Lett, 2012, 109(9), 5 doi: 10.1103/PhysRevLett.109.096602
[9]	Sato N, El-Ghazaly A, White R M, et al. Effect of Mg oxidation degree on Rashba-effect-induced torques in Ta/CoFeB/Mg(MgO) multilayer. IEEE Trans Magn, 2016, 52(7), 4 doi: 10.1109/TMAG.2016.2580878
[10]	Wei H X, Qin Q H, Ma M, et al. 80% tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers. J Appl Phys, 2007, 101(9), 3 doi: 10.1063/1.2696590
[11]	Yu G Q, Upadhyaya P, Fan Y B, et al. Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields. Nat Nanotechnol, 2014, 9(7), 548 doi: 10.1038/nnano.2014.94
[12]	Prenat G, Jabeur K, Di Pendina G, et al. Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications. In: Spintronics-based Computing. Springer, 2015, 145
[13]	Lopes J, Di Pendina G, Zianbetov E, et al. Radiative effects on MRAM-based non-volatile elementary structures. 2015 IEEE Computer Society Annual Symposium on VLSI, 2015
[14]	Wang B, Wang Z, Hu C, et al. Radiation-hardening techniques for spin orbit torque-MRAM peripheral circuitry. IEEE Trans Magn, 2018, 54(11), 1 doi: 10.1109/TMAG.2018.2830701
[15]	Nguyen D, Irom F. Radiation effects on MRAM. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
[16]	Hall E H. On a new action of the magnet on electric currents. Am J Math, 1879, 2(3), 287 doi: 10.2307/2369245
[17]	Nagaosa N, Sinova J, Onoda S, et al. Anomalous Hall effect. Rev Mod Phys, 2010, 82(2), 1539 doi: 10.1103/RevModPhys.82.1539
[18]	Smit J. The spontaneous Hall effect in ferromagnetics I. Physica, 1955, 21(6–10), 877 doi: 10.1016/S0031-8914(55)92596-9
[19]	Smit J. The spontaneous Hall effect in ferromagnetics II. Physica, 1958, 24(1–5), 39 doi: 10.1016/s0031-8914(58)93541-9
[20]	Berger L. Side-jump mechanism for the Hall effect of ferromagnets. Phys Rev B, 1970, 2(11), 4559 doi: 10.1103/PhysRevB.2.4559
[21]	Kong W, Wan C, Wang X, et al. Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes. Nat Commun, 2019, 10(1), 1 doi: 10.1038/s41467-018-07882-8
[22]	Tsen K T. Non-equilibrium dynamics of semiconductors and nanostructures. CRC Press, 2005

Fig. 1. (Color online) (a) The structure of SOT magnetic film. (b) The structure of SOT Hall device. (c) The image of SOT Hall device.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) The normalized hysteresis loops of SOT magnetic films under different radiation doses. (b) The differential curves of SOT magnetic films hysteresis loops under different radiation doses. The magnetic field sweep rate is 15 Oe/s. All the experiments are performed at room temperature.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) The anomalous Hall curves of SOT Hall device films under different radiation doses at room temperature. (b) The differential curves of SOT Hall devices films under different radiation doses at room temperature. The in plane magnetic field is 50 Oe. The pulse time of current is 0.5 ms.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) The distribution of equilibrium carriers in the Hall device before radiation. (b) The distribution of nonequilibrium carriers induced by irradiation in the Hall device.

DownLoad: Full-Size Img PowerPoint

[1]	Hu J M, Chen L Q, Nan C W. Multiferroic heterostructures integrating ferroelectric and magnetic materials. Adv Mater, 2016, 28(1), 15 doi: 10.1002/adma.201502824
[2]	Perrissin N, Lequeux S, Strelkov N, et al. A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy. Nanoscale, 2018, 10(25), 12187 doi: 10.1039/C8NR01365A
[3]	Sato H, Ikeda S, Ohno H. Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm. Jpn J Appl Phys, 2017, 56(8), 9 doi: 10.7567/JJAP.56.0802A6
[4]	Gerardin S, Paccagnella A. Present and future non-volatile memories for space. IEEE Trans Nucl Sci, 2010, 57(6), 3016 doi: 10.1109/TNS.2010.2084101
[5]	Cui Y, Yang L, Gao T, et al. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices. Chin Phys B, 2017, 26(8), 087501 doi: 10.1088/1674-1056/26/8/087501
[6]	Arias S I R, Muñoz D R, Cardoso S, et al. Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors. Sens Actuators A, 2015, 225, 119 doi: 10.1016/j.sna.2015.01.021
[7]	Garello K, Avci C O, Miron I M, et al. Ultrafast magnetization switching by spin-orbit torques. Appl Phys Lett, 2014, 105(21), 5 doi: 10.1063/1.4902443
[8]	Liu L Q, Lee O J, Gudmundsen T J, et al. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys Rev Lett, 2012, 109(9), 5 doi: 10.1103/PhysRevLett.109.096602
[9]	Sato N, El-Ghazaly A, White R M, et al. Effect of Mg oxidation degree on Rashba-effect-induced torques in Ta/CoFeB/Mg(MgO) multilayer. IEEE Trans Magn, 2016, 52(7), 4 doi: 10.1109/TMAG.2016.2580878
[10]	Wei H X, Qin Q H, Ma M, et al. 80% tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers. J Appl Phys, 2007, 101(9), 3 doi: 10.1063/1.2696590
[11]	Yu G Q, Upadhyaya P, Fan Y B, et al. Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields. Nat Nanotechnol, 2014, 9(7), 548 doi: 10.1038/nnano.2014.94
[12]	Prenat G, Jabeur K, Di Pendina G, et al. Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications. In: Spintronics-based Computing. Springer, 2015, 145
[13]	Lopes J, Di Pendina G, Zianbetov E, et al. Radiative effects on MRAM-based non-volatile elementary structures. 2015 IEEE Computer Society Annual Symposium on VLSI, 2015
[14]	Wang B, Wang Z, Hu C, et al. Radiation-hardening techniques for spin orbit torque-MRAM peripheral circuitry. IEEE Trans Magn, 2018, 54(11), 1 doi: 10.1109/TMAG.2018.2830701
[15]	Nguyen D, Irom F. Radiation effects on MRAM. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
[16]	Hall E H. On a new action of the magnet on electric currents. Am J Math, 1879, 2(3), 287 doi: 10.2307/2369245
[17]	Nagaosa N, Sinova J, Onoda S, et al. Anomalous Hall effect. Rev Mod Phys, 2010, 82(2), 1539 doi: 10.1103/RevModPhys.82.1539
[18]	Smit J. The spontaneous Hall effect in ferromagnetics I. Physica, 1955, 21(6–10), 877 doi: 10.1016/S0031-8914(55)92596-9
[19]	Smit J. The spontaneous Hall effect in ferromagnetics II. Physica, 1958, 24(1–5), 39 doi: 10.1016/s0031-8914(58)93541-9
[20]	Berger L. Side-jump mechanism for the Hall effect of ferromagnets. Phys Rev B, 1970, 2(11), 4559 doi: 10.1103/PhysRevB.2.4559
[21]	Kong W, Wan C, Wang X, et al. Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes. Nat Commun, 2019, 10(1), 1 doi: 10.1038/s41467-018-07882-8
[22]	Tsen K T. Non-equilibrium dynamics of semiconductors and nanostructures. CRC Press, 2005

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Received: 13 July 2020 Revised: 03 November 2020 Online: Accepted Manuscript: 22 December 2020Uncorrected proof: 25 December 2020Published: 08 February 2021

Article Navigation > Journal of Semiconductors > 2021 > 42(2): 024102

Tengzhi Yang, Yan Cui, Yanru Li, Meiyin Yang, Jing Xu, Huiming He, Shiyu Wang, Jing Zhang, Jun Luo. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J]. Journal of Semiconductors, 2021, 42(2): 024102. doi: 10.1088/1674-4926/42/2/024102 ****T Z Yang, Y Cui, Y R Li, M Y Yang, J Xu, H M He, S Y Wang, J Zhang, J Luo, The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J]. J. Semicond., 2021, 42(2): 024102. doi: 10.1088/1674-4926/42/2/024102.

Citation:

Tengzhi Yang, Yan Cui, Yanru Li, Meiyin Yang, Jing Xu, Huiming He, Shiyu Wang, Jing Zhang, Jun Luo. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J]. Journal of Semiconductors, 2021, 42(2): 024102. doi: 10.1088/1674-4926/42/2/024102 ****

T Z Yang, Y Cui, Y R Li, M Y Yang, J Xu, H M He, S Y Wang, J Zhang, J Luo, The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J]. J. Semicond., 2021, 42(2): 024102. doi: 10.1088/1674-4926/42/2/024102.

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The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

DOI: 10.1088/1674-4926/42/2/024102

1.
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China
2.
University of Chinese of Academy Sciences (UCAS), Beijing 100049, China
3.
School of Information Science and Technology, North China University of Technology, Beijing 100041, China

More Information

Tengzhi Yang：got his BS degree at Nanjing University in 2017. Now he is a PhD student at Institute of Microelectronics, Chinese Academy of Sciences, learning from Prof. Jun Luo. His research interests include spin electronic devices, magnetic based memories and artificial neurons
Yan Cui：got his PhD degree at Institute of Physics, Chinese Academy of Sciences in 2014. Now he is associate professor at Integrated Circuit Advanced Process R&D Center of Institute of Microelectronics, Chinese Academy of Sciences. His research interests are spintronics based memory device, all spin logic-in memory architecture and circuit and radiation effect on spintronics
Jing Zhang：got her MS degree from Lanzhou University in 2003. Now she is a professor of Microelectronics Department, North China University of Technology. Her research work focused on IC devices fabrication and testing
Corresponding author: cuiyan@ime.ac.cn; zhangj@ncut.edu.cn
Received Date: 2020-07-13
Revised Date: 2020-11-03
Published Date: 2021-02-10

Abstract

Abstract

Magnetoresistive random access memories (MRAMs) have drawn the attention of radiation researchers due to their potential high radiation tolerance. In particular, spin-orbit torque MRAM (SOT-MRAM) has the best performance on endurance and access speed, which is considered to be one of the candidates to replace SRAM for space application. However, little attention has been given to the γ-ray irradiation effect on the SOT-MRAM device yet. Here, we report the Co-60 irradiation results for both SOT (spin-orbit torque) magnetic films and SOT-Hall devices with the same stacks. The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad (Si) while the magnetoelectronic properties of SOT-Hall devices exhibit a reversible change behavior during the radiation. We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon. Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.
- SOT-MRAM,
- γ-ray irradiation,
- TID effect,
- anomalous Hall effect

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References(22)

References

[1]	Hu J M, Chen L Q, Nan C W. Multiferroic heterostructures integrating ferroelectric and magnetic materials. Adv Mater, 2016, 28(1), 15 doi: 10.1002/adma.201502824
[2]	Perrissin N, Lequeux S, Strelkov N, et al. A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy. Nanoscale, 2018, 10(25), 12187 doi: 10.1039/C8NR01365A
[3]	Sato H, Ikeda S, Ohno H. Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm. Jpn J Appl Phys, 2017, 56(8), 9 doi: 10.7567/JJAP.56.0802A6
[4]	Gerardin S, Paccagnella A. Present and future non-volatile memories for space. IEEE Trans Nucl Sci, 2010, 57(6), 3016 doi: 10.1109/TNS.2010.2084101
[5]	Cui Y, Yang L, Gao T, et al. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices. Chin Phys B, 2017, 26(8), 087501 doi: 10.1088/1674-1056/26/8/087501
[6]	Arias S I R, Muñoz D R, Cardoso S, et al. Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors. Sens Actuators A, 2015, 225, 119 doi: 10.1016/j.sna.2015.01.021
[7]	Garello K, Avci C O, Miron I M, et al. Ultrafast magnetization switching by spin-orbit torques. Appl Phys Lett, 2014, 105(21), 5 doi: 10.1063/1.4902443
[8]	Liu L Q, Lee O J, Gudmundsen T J, et al. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys Rev Lett, 2012, 109(9), 5 doi: 10.1103/PhysRevLett.109.096602
[9]	Sato N, El-Ghazaly A, White R M, et al. Effect of Mg oxidation degree on Rashba-effect-induced torques in Ta/CoFeB/Mg(MgO) multilayer. IEEE Trans Magn, 2016, 52(7), 4 doi: 10.1109/TMAG.2016.2580878
[10]	Wei H X, Qin Q H, Ma M, et al. 80% tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers. J Appl Phys, 2007, 101(9), 3 doi: 10.1063/1.2696590
[11]	Yu G Q, Upadhyaya P, Fan Y B, et al. Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields. Nat Nanotechnol, 2014, 9(7), 548 doi: 10.1038/nnano.2014.94
[12]	Prenat G, Jabeur K, Di Pendina G, et al. Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications. In: Spintronics-based Computing. Springer, 2015, 145
[13]	Lopes J, Di Pendina G, Zianbetov E, et al. Radiative effects on MRAM-based non-volatile elementary structures. 2015 IEEE Computer Society Annual Symposium on VLSI, 2015
[14]	Wang B, Wang Z, Hu C, et al. Radiation-hardening techniques for spin orbit torque-MRAM peripheral circuitry. IEEE Trans Magn, 2018, 54(11), 1 doi: 10.1109/TMAG.2018.2830701
[15]	Nguyen D, Irom F. Radiation effects on MRAM. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007
[16]	Hall E H. On a new action of the magnet on electric currents. Am J Math, 1879, 2(3), 287 doi: 10.2307/2369245
[17]	Nagaosa N, Sinova J, Onoda S, et al. Anomalous Hall effect. Rev Mod Phys, 2010, 82(2), 1539 doi: 10.1103/RevModPhys.82.1539
[18]	Smit J. The spontaneous Hall effect in ferromagnetics I. Physica, 1955, 21(6–10), 877 doi: 10.1016/S0031-8914(55)92596-9
[19]	Smit J. The spontaneous Hall effect in ferromagnetics II. Physica, 1958, 24(1–5), 39 doi: 10.1016/s0031-8914(58)93541-9
[20]	Berger L. Side-jump mechanism for the Hall effect of ferromagnets. Phys Rev B, 1970, 2(11), 4559 doi: 10.1103/PhysRevB.2.4559
[21]	Kong W, Wan C, Wang X, et al. Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes. Nat Commun, 2019, 10(1), 1 doi: 10.1038/s41467-018-07882-8
[22]	Tsen K T. Non-equilibrium dynamics of semiconductors and nanostructures. CRC Press, 2005

The effect of γ-ray irradiation on the SOT magnetic films and Hall devices

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