J. Semicond. > 2023, Volume 44 > Issue 3 > 031001
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REVIEWS

Preparation, properties, and applications of Bi2O2Se thin films: A review

Huayu Tao1, 2, Tianlin Wang1, Danyang Li1, Jie Xing1 and Gengwei Li1,

+ Author Affiliations

 Corresponding author: Gengwei Li, ligw@cugb.edu.cn

DOI: 10.1088/1674-4926/44/3/031001

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Abstract: Two-dimensional materials have shown great application potential in high-performance electronic devices because they are ultrathin, have an ultra-large specific surface area, high carrier mobility, efficient channel current regulation, and extraordinary integration. In addition to graphene, other types of 2D nanomaterials have also been studied and applied in photodetectors, solar cells, energy storage devices, and so on. Bi2O2Se is an emerging 2D semiconductor material with very high electron mobility, modest bandgap, near-ideal subthreshold swing, and excellent thermal and chemical stability. Even in a monolayer structure, Bi2O2Se has still exhibited efficient light absorption. In this mini review, the latest main research progresses on the preparation methods, electric structure, and the optical, mechanical, and thermoelectric properties of Bi2O2Se are summarized. The wide rang of applications in electronics and photoelectronic devices are then reviewed. This review concludes with a discussion of the existing open questions/challenges and future prospects for Bi2O2Se.

Key words: two-dimensional material, Bi2O2Se, electronical structure, optical property, thermoelectricity



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Fig. 1.  (Color online) (a) Graphene optical photographs with a thickness of about 3 nm. (b) Atomic force microscope images of monolayer graphene. Reproduced with permission[9]. Copyright 2004, The American Association for the Advancement of Science. (c) Schematic diagram of the atomic structure of graphene. (d) Schematic diagram of black phosphorus atomic structure. Reproduced with permission[14]. Copyright 2014, Nature Publishing Group. (e) Schematic diagram of MoS2 atomic structure. Reproduced with permission[15]. Copyright 2011, Nature Publishing Group.

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Fig. 2.  (Color online) Preparation of two-dimensional films by CVD method. (a) CVD preparation diagram. Reproduced with permission[31]. Copyright 2017, American Chemical Society. (b) 2D Bi2O2Se crystal synthesized on mica. Reproduced with permission[11]. Copyright 2017, Nature Publishing Group. (c–f) Domain size and crystal phase transition of Bi2O2Se thin films. Reproduced with permission[31]. Copyright 2017, American Chemical Society. (g, h) SEM of both transverse Bi2O2Se and vertical triangular Bi2OxSe. Reproduced with permission 41]. Copyright 2018, Wiley-VCH. (i) Improved preparation method. Reproduced with permission[32]. Copyright 2019, American Chemical Society. (j, k) Schematic of VS growth mechanism. Reproduced with permission[20]. Copyright 2019, Wiley-VCH. (l) SEM pictures of Bi2O2Se on STO. Reproduced with permission[19]. Copyright 2019, American Chemical Society. (m) Vertical growth of 2D Bi2O2Se films. Reproduced with permission[43]. Copyright 2019, Wiley-VCH.

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Fig. 3.  (Color online) (a) Crystal structure of Bi2O2Se. Reproduced with permission[46]. Copyright 2018, Wiley-VCH. (b, c) HRTEM of Bi2O2Se. Reproduced with permission[31]. Copyright 2017, American Chemical Society.

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Fig. 4.  (Color online) (a–c) ARPES of Bi2O2Se films. Reproduced with permission[11]. Copyright 2017, Nature Publishing Group. (d) Band structure of Bi2O2Se films and bulk. Reproduced with permission[16]. Copyright 2019, Nature Publishing Group.

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Fig. 5.  (Color online) (a) Raman spectra of Bi2O2Se films with different layers. Reproduced with permission[20]. Copyright 2019, Wiley-VCH. (b–d) Four Raman vibration modes of Bi2O2Se. Reproduced with permission[55]. Copyright 2018, American Chemical Society.

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Fig. 6.  (Color online) (a, b) Transmittance and band gap of 2D Bi2O2Se films and bulk. Reproduced with permission[31]. Copyright 2017, American Chemical Society. (c) Peak differential reflection (blue symbols) and PL (red curve) of the 13 nm nanoplate as a function of the probe wavelength (upper panel) and its transmittance spectrum (lower panel). Reproduced with permission[56]. Copyright 2020, Wiley-VCH. (d) Peak differential reflection (blue symbols) and PL (red curve) of the monolayer as a function of the probe wavelength. Reproduced with permission[56]. Copyright 2020, Wiley-VCH.

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Fig. 7.  (Color online) (a) TEM image of Bi2O2Se on a copper grid. Reproduced with permission[20]. Copyright 2019, Wiley-VCH. (b) Photograph of 2D Bi2O2Se photodetectors and arrays on mica. (c) Optical image of 3  ×  5 multi-pixel array of 2D Bi2O2Se photodetectors. (d) Photocurrent of a 2D Bi2O2Se photodetector in air. Reproduced with permission [40]. Copyright 2018, Nature Publishing Group.

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Fig. 8.  (a) Electrical conductivity σ of the Bi2O2Se film as a function of temperature. (b) Thermal conductivity κ of the Bi2O2Se rectangular block as a function of temperature. (c) Seebeck coefficient S of the Bi2O2Se film as a function of temperature. Reproduced with permission[59]. Copyright 2013, Elsevier.

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Fig. 9.  (Color online) Schematic representation of device applications of Bi2O2Se.

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Fig. 10.  (Color online) (a) Output curves of a 6.2 nm-thick Bi2O2Se device at room temperature. (b) μapp and Ion/Ioff of Bi2O2Se FETs as a function of channel thickness. Reproduced with permission[11]. Copyright 2017, Nature Publishing Group. (c) OM image of centimeter-scale 2D Bi2O2Se arrays. (d) Linear Ids–Vds curves of Bi2O2Se device with/without the illumination of 532 nm incident laser. Reproduced with permission[67]. Copyright 2017, Wiley-VCH. (e–g) Photocurrent, dark current, responsivity, detectivity, and response time as a function of temperature. Reproduced with permission[41]. Copyright 2018, Wiley-VCH.

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Fig. 11.  (Color online) (a) Schematic illustration of the PbSe/Bi2O2Se photodetector. (b) The estimated Type II energy band alignment between PbSe and Bi2O2Se before and after contact based on the estimated valence band offset and work function difference in UPS. (c) Photoresponse spectra. (d) Response decay dynamics of the hybrid photodetector. Reproduced with permission[68]. Copyright 2019, American Chemical Society. (e) Schematic illustration of the Bi2O2Se/MoSe2 heterojunction photodetector. Reproduced with permission[70]. Copyright 2019, Springer Science Business Media, LLC, part of Springer Nature. (f) OM image of as-fabricated device with 3-layered Bi2O2Se IPJ. (g) Output characteristic curve of the device in panel (m). Reproduced with permission[71]. Copyright 2019, Chinese Physical Society. (h) Preparation of Au/Bi2O2Se/Au MSM structures on mica substrates with a probe tip. Reproduced with permission[72]. Copyright 2019, Royal Society of Chemistry.

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Fig. 12.  (Color online) (a) Structure of polymer solar cells. (b) Energy diagram of the device. Reproduced with permission[79]. Copyright 2020, American Chemical Society.

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Fig. 13.  (Color online) (a) Schematic diagram of the Bi2O2Se device structure. (b) Optical image of the Bi2O2Se memristor. Reproduced with permission[25]. Copyright 2018, Wiley-VCH.

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Fig. 14.  (Color online) Structure diagram of a Bi2O2Se optical switch. Reproduced with permission[46]. Copyright 2018, Wiley-VCH.

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Fig. 15.  (Color online) (a) TEM image, (b) AFM image, and (c) height analysis of Bi2O2Se QDs. Reproduced with permission[23]. Copyright 2019, Wiley-VCH.

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Table 1.   Summary of preparation methods, growth conditions, and basic characteristics for Bi2O2Se.

MethodPrecursor,
growth conditions		Domain size (μm)Thickness (nm)Mobility (cm2/(V·s))Ref.
CVDBi2Se3, Bi2O3, 600–640 °C, 400 Torr~2002–4 layers~313 (300 K)
–20660 (2 K)		[31]
CVDSe, Bi2O3, 680 °C, 400 Torr~2504 layers410 (RT)[32]
CVDBi2Se3,Bi2O3, 580–650 °C, 100-400 Torr>2006.7~450 (RT)
–29000 (1.9 K)		[11]
CVDBi2Se3, Bi2O3, 550–630 °C, 30 Pa~1809.8 98 (300 K)[33]
CVDBi2Se3, Bi2O3, 620 °C, 350–400 Torr~1005.2107[34]
CVDBi2Se3, Bi2O3, <670 °C~2000.65~262 (RT)[35]
CVDBi2Se3, Bi2O3, >670 °C>170010.8–[35]
Reverse-flow CVDBi2O2Se powder, 760 °C, 400 mbar~75013.71400 (RT)[47]
Modified Bridgman methodBi2O3, Se, Bi powderBulkBulk2.8 × 105 (2 K)[37]
Hydrothermal
method		C6H13BiN2O7·H2O, Na2O3Se and KOH>24.7–[48]
Hydrothermal
method		Na2SeO3, C6H13BiN2O7·H2O and KOH>604.92334.7 (RT)[49]
Solution-assisted methodBi(NO3)3·5H2O, (CH2OH)2, 500 °C, 400 TorrContinuous8.574 (RT)[18]
DownLoad: CSV

Table 2.   Comparisons of device performance of Bi2O2Se and other 2D materials.

MaterialLaser wavelength (nm)Responsivity
(A/W)		Detectivity
(Jones)		Rise/decay
time (ms)		Ref.
Bi2O2Se36075.143.32 × 101278.85[48]
Bi2O2Se405500558.2 × 10120.032/0.098[33]
Bi2O2Se450602.4 × 10105/7 (532 nm)[47]
Bi2O2Se473722.25.64 × 10110.267/1.1[73]
Bi2O2Se532842.918.18 × 1012–[49]
Bi2O2Se532350009 × 10130.308/0.448[34]
Bi2O2Se532458002.65 × 1012200[74]
Bi2O2Se5909.19 × 1062.08 × 101239/63[35]
Bi2O2Se6409.11.3 × 1080.036/0.016[72]
Bi2O2Se6402.53.2 × 1080.0025/0.0048[71]
Bi2O2Se660221003.4 × 10156/20[20]
Bi2O2Se8086.58.3 × 10113.2/4.6[41]
Bi2O2Se9001011.9 × 101030[69]
Bi2O2Se1200653 × 10910–9[40]
Bi2O2Se/MoSe27800.4133.7 × 10110.79/0.49 (515 nm)[70]
Bi2O2Se/PbSe20003 × 103–<4[68]
BiOCl25035.72.2 × 1010–[75]
FePSe3/MoS2265336001.51 × 10130.32/0.36 (637 nm)[76]
SnS2/Au5321125.92.12 × 101120/770[77]
Graphene8900.57.4 × 109<10–5[78]
Graphene/PbS6005 × 1077 × 101310/100 (532 nm)[64]
Graphene375–37506 × 104 (Vis)
0.3 (NIR)
0.1 (MIR)		–<10–3[65]
DownLoad: CSV
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    Received: 22 August 2022 Revised: 03 October 2022 Online: Accepted Manuscript: 21 October 2022Uncorrected proof: 28 October 2022Published: 10 March 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(3): 031001
      Huayu Tao, Tianlin Wang, Danyang Li, Jie Xing, Gengwei Li. Preparation, properties, and applications of Bi2O2Se thin films: A review[J]. Journal of Semiconductors, 2023, 44(3): 031001. doi: 10.1088/1674-4926/44/3/031001 ****H Y Tao, T L Wang, D Y Li, J Xing, G W Li. Preparation, properties, and applications of Bi2O2Se thin films: A review[J]. J. Semicond, 2023, 44(3): 031001. doi: 10.1088/1674-4926/44/3/031001
      Citation:
      Huayu Tao, Tianlin Wang, Danyang Li, Jie Xing, Gengwei Li. Preparation, properties, and applications of Bi2O2Se thin films: A review[J]. Journal of Semiconductors, 2023, 44(3): 031001. doi: 10.1088/1674-4926/44/3/031001 ****
      H Y Tao, T L Wang, D Y Li, J Xing, G W Li. Preparation, properties, and applications of Bi2O2Se thin films: A review[J]. J. Semicond, 2023, 44(3): 031001. doi: 10.1088/1674-4926/44/3/031001
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      Preparation, properties, and applications of Bi2O2Se thin films: A review

      DOI: 10.1088/1674-4926/44/3/031001
      • 1.

        School of Science, China University of Geosciences, Beijing 100083, China

      • 2.

        School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China

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      • Huayu Tao：is an undergraduate in the School of Materials Science and Engineering of China University of Geosciences (Beijing), mainly engaged in the research of low dimensional oxide materials. Her work has been published in Renewable & Sustainable Energy Reviews
      • Gengwei Li：has worked in China University of Geosciences (Beijing) since he graduated from Beijing Normal University with a master's degree in optics in 2001, and received a doctorate in solid geophysics from China University of Geosciences (Beijing) in 2013. Mainly engaged in the theoretical research of optics, thin film materials and electromagnetic fields. Nearly 50 papers have been published, including Materials Research Express, Acta Physica Sinica, Materials Review, OptoElectronics Letters, etc
      • Corresponding author: ligw@cugb.edu.cn
      • Received Date: 2022-08-22
      • Revised Date: 2022-10-03
        • Available Online: 2022-10-21

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