J. Semicond. > 2023, Volume 44 > Issue 4 > 041901
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Phonon-assisted upconversion photoluminescence of quantum emitters

Yuanfei Gao1, §, Jia-Min Lai2, 3, § and Jun Zhang2, 3,

+ Author Affiliations

 Corresponding author: Jun Zhang, zhangjwill@semi.ac.cn

DOI: 10.1088/1674-4926/44/4/041901

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Abstract: Quantum emitters are widely used in quantum networks, quantum information processing, and quantum sensing due to their excellent optical properties. Compared with Stokes excitation, quantum emitters under anti-Stokes excitation exhibit better performance. In addition to laser cooling and nanoscale thermometry, anti-Stokes excitation can improve the coherence of single-photon sources for advanced quantum technologies. In this review, we follow the recent advances in phonon-assisted upconversion photoluminescence of quantum emitters and discuss the upconversion mechanisms, applications, and prospects for quantum emitters with anti-Stokes excitation.

Key words: quantum emitters, phonon-assisted upconversion, electron-phonon coupling, single-photon source



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Fig. 1.  (Color online) The mechanism of phonon-assisted upconversion. (a) Stokes and anti-Stokes (AS) photoluminescence processes are represented by the energy structure of electronic and vibrational levels for color centers. (b) The Simplified Model of Optical Cooling. (a) Reproduced from Ref. [10], CC BY 4.0. (b) Reprinted with permission from Ref. [40]. Copyright © 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim.

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Fig. 2.  (Color online) Phonon-assisted upconversion photoluminescence in diamond. (a) Cooling of an NV-doped diamond suspended in vacuum. The cooling temperature as a function of quantum efficiency. Here it is assumed that non-radiative process heats the diamond. (b) The temperature dependence of intensity under Stokes and anti-Stokes excitation for SiV– centers. (c) Anti-Stokes PLE spectra of SiV– centers (ZPL: 738 nm) at room temperature. (d) Characterization of the anti-Stokes-based nanothermometer: the relative sensitivity versus temperature for several different systems. (a) Reprinted with permission from Ref. [24]. Copyright © 2017, American Physical Society. (b) and (c) Reprinted with permission from Ref. [25]. Copyright © 2018, American Chemical Society. (d) Reproduced from Ref. [10], CC BY 4.0.

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Fig. 3.  (Color online) Photoluminescence upconversion in low dimensional materials. (a) The photoluminescence excitation spectrum of the integrated ZPL (565 nm). The green dots and red squares correspond to Stokes and anti-Stokes excitations, respectively. The suppression of spectral diffusion under anti-Stokes excitation: the PL time series of a single emitter under (b) Stokes excitation (532 nm) and (c) anti-Stokes excitation (637 nm), respectively. The optical cooling of QDs. (d) The temperature changes of the QD sample under different excitation wavelengths. (e) The upconversion photoluminescence mechanism of QDs. (a) Reproduced from Ref. [43]. Copyright © 2018, American Chemical Society. (b) and (c) Reprinted with permission from Ref. [32]. Copyright © 2019, AIP Publishing. (d) and (e) Reproduced from Ref. [64], CC BY 4.0.

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Fig. 4.  (Color online) Quantum sensing under anti-Stokes excitation. (a) Charge state manipulation of NV centers: the charge state conversion process between NV0 and NV– under different excitation wavelengths. (b) The decay process of NV– centers at 4 K under anti-Stokes excitation. Robust coherent control of spin qubits using anti-Stokes excitation. (c) The excitation schemes of Vsi center under Stokes excitation and anti-Stokes excitation. (d) Stokes and anti-Stokes excited ODMR of Vsi centers for different external magnetic fields. (a) and (b) Reprinted with permission from Ref. [7]. Copyright © 2022, American Chemical Society. (c) and (d) Reproduced from Ref. [72], CC BY 4.0.

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Fig. 5.  (Color online) The single-photon source under anti-Stokes excitation. (a) Dual-resonance enhanced X-CX transition for highly pure single-photon emission. Temperature-dependent PL mapping of a QD in cavity. (b) Hanbury Brown and Twiss (HBT) measurements of single-photon purity under the dual-resonance enhanced intra-dot excitation. (c) Dual resonances enhanced upconverted excitation. (a)–(c) Reproduced from Ref. [38], CC BY 4.0.

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    Received: 28 November 2022 Revised: 24 December 2022 Online: Accepted Manuscript: 31 January 2023Uncorrected proof: 03 February 2023Published: 10 April 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(4): 041901
      Yuanfei Gao, Jia-Min Lai, Jun Zhang. Phonon-assisted upconversion photoluminescence of quantum emitters[J]. Journal of Semiconductors, 2023, 44(4): 041901. doi: 10.1088/1674-4926/44/4/041901 ****Y F Gao, J M Lai, J Zhang. Phonon-assisted upconversion photoluminescence of quantum emitters[J]. J. Semicond, 2023, 44(4): 041901. doi: 10.1088/1674-4926/44/4/041901
      Citation:
      Yuanfei Gao, Jia-Min Lai, Jun Zhang. Phonon-assisted upconversion photoluminescence of quantum emitters[J]. Journal of Semiconductors, 2023, 44(4): 041901. doi: 10.1088/1674-4926/44/4/041901 ****
      Y F Gao, J M Lai, J Zhang. Phonon-assisted upconversion photoluminescence of quantum emitters[J]. J. Semicond, 2023, 44(4): 041901. doi: 10.1088/1674-4926/44/4/041901
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      Phonon-assisted upconversion photoluminescence of quantum emitters

      DOI: 10.1088/1674-4926/44/4/041901
      • 1.

        Beijing Academy of Quantum Information Sciences, Beijing 100193, China

      • 2.

        State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Beijing 100083, China

      • 3.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China

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      • Yuanfei Gao：received a bachelor's degree and a Ph.D. in optics from Zhengzhou University in China in 2013 and 2019. Then he works as an assistant research fellow at the Beijing Academy of Quantum Information Sciences in China. His research interest is on light-matter interactions in quantum optics
      • Jia-Min Lai：is now a Ph.D. student supervised by Prof. Jun Zhang in the State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences. She received her bachelor's degree from Northeastern University in China. Her current research interest focuses on electron-phonon coupling in semiconductors
      • Jun Zhang：received a bachelor's degree from Inner Mongolia University in China in 2004, and a Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2010. Then he worked as a postdoctoral fellow at Nanyang Technological University in Singapore from 2010 to 2015 and joined the State Key laboratory of Superlattice for Semiconductors (CAS) as a professor in 2015. His current research focuses on light-matter interactions in novel low-dimensional semiconductor optoelectronic materials
      • Corresponding author: zhangjwill@semi.ac.cn
      • Received Date: 2022-11-28
      • Revised Date: 2022-12-24
        • Available Online: 2023-01-31

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