J. Semicond. > 2023, Volume 44 > Issue 6 > 061802
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REVIEWS

Recent advances in NiO/Ga2O3 heterojunctions for power electronics

Xing Lu, Yuxin Deng, Yanli Pei, Zimin Chen and Gang Wang

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 Corresponding author: Gang Wang, stswangg@mail.sysu.edu.cn

DOI: 10.1088/1674-4926/44/6/061802

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Abstract: Beta gallium oxide (β-Ga2O3) has attracted significant attention for applications in power electronics due to its ultra-wide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga’s figures of merit (BFOM) of more than 3000. Though β-Ga2O3 possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga2O3-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide (NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga2O3 heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga2O3 heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga2O3 heterojunctions are discussed. Various device architectures, including the NiO/β-Ga2O3 heterojunction pn diodes (HJDs), junction barrier Schottky (JBS) diodes, and junction field effect transistors (JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga2O3 heterojunction, are described.

Key words: gallium oxide (Ga2O3), nickel oxide (NiO), heterojunction, power devices



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Fig. 1.  (Color online) (a) Device schematic and (b) I–V characteristics of the sol-gel NiO/β-Ga2O3 heterojunction diode. Reproduced from Ref. [26]. Copyright 2016, The Japan Society of Applied Physics.

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Fig. 2.  (Color online) (a) Schematic of the first kilovolt-class NiO/β-Ga2O3 heterojunction diode. The (b) forward and (c) reverse I–V characteristics of the devices. Reproduced from Ref. [27]. Copyright 2020, IEEE.

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Fig. 3.  (Color online) (a) XRD patterns of the sputtered NiO film on sapphire before and after annealing. (b) Cross-sectional HRTEM images of the NiO/β-Ga2O3 heterojunction interface. Reproduced from Ref. [48]. Copyright 2021, IEEE.

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Fig. 4.  (Color online) The energy band diagrams of the NiO/β-Ga2O3 heterojunctions at thermal equilibrium with different β-Ga2O3 substrate orientations. Reproduced from Ref. [47]. Copyright 2023, Elsevier B.V.

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Fig. 5.  (Color online) Band alignments of the NiO/β-Ga2O3 heterojunctions as a function of post-deposition annealing temperature. Reproduced from Ref. [57]. Copyright 2022, IOP Publishing Ltd.

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Fig. 6.  (Color online) (a) Temperature-dependent forward I–V characteristics and the fitting result with the interface recombination and trap-assisted tunneling current model. (b) ln(Jt0) versus temperature plot for the NiO/β-Ga2O3 heterojunction. Reproduced from Ref. [48]. Copyright 2021, IEEE.

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Fig. 7.  (Color online) Energy band diagrams of the NiO/β-Ga2O3 heterojunction p–n diode at a (a) low and (b) high forward bias. Reproduced from Ref. [48]. Copyright 2021, IEEE.

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Fig. 8.  (Color online) The milestones of the state-of-the-art NiO/β-Ga2O3 heterojunction based power devices. Reproduced from Refs. [27, 32, 33, 35]. Copyright 2021 and 2022, IEEE.

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Fig. 9.  (Color online) The (a) forward and (b) reverse I–V characteristics of the NiO/β-Ga2O3 heterojunction diodes with and without annealing. Reproduced from Ref. [66]. Copyright 2021, AIP Publishing.

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Fig. 10.  (Color online) (a) Cross-sectional schematic of the NiO/β-Ga2O3 heterojunction with small-angle bevel FP. The (b) forward and (c) reverse I–V characteristics of the devices. Reproduced from Ref. [25]. Copyright 2022, IEEE.

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Fig. 11.  (Color online) (a) Device schematic and (b) the reverse I–V characteristics of the double-layered NiO/β-Ga2O3 heterojunction diode. Reproduced from Ref. [68]. Copyright 2020, AIP Publishing.

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Fig. 12.  (Color online) (a) Simulated two-dimensional electric field distributions in the vicinity of the NiO and anode electrode at a reverse bias of 1000 V for the double-layered NiO/β-Ga2O3 HJD and (b) line profile of simulated electric field along the surface of the β-Ga2O3 drift layer for the HJD with varied W’ (W’ = Rp−NiO − Rp+NiO). Reproduced from Ref. [49]. Copyright 2022, IEEE.

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Fig. 13.  (Color online) (a) Device schematic and (b) the reverse I–V characteristics of the double-layered NiO/β-Ga2O3 heterojunction diode with varied thickness of the bottom NiO layer. Reproduced from Ref. [69]. Copyright 2022, AIP Publishing.

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Fig. 14.  (Color online) (a) Cross-sectional schematic of the NiO/β-Ga2O3 heterojunction diode with bevel mesa. The (b) forward and (c) reverse I–V characteristics of the devices. Reproduced from Ref. [70]. Copyright 2021, AIP Publishing.

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Fig. 15.  (Color online) (a) Cross-sectional schematic of the NiO/β-Ga2O3 heterojunction diode with double NiO layer and edge termination. The (b) forward and (c) reverse I–V characteristics of the devices. Reproduced from Ref. [62].

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Fig. 16.  (Color online) (a) Cross-sectional schematic of the NiO/β-Ga2O3 JBS diode. The (b) forward and (c) reverse I–V characteristics of the devices. Reproduced from Ref. [32]. Copyright 2021, IEEE.

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Fig. 17.  (Color online) (a) Cross-sectional schematic of the NiO/β-Ga2O3 JBS diode with fin structure. The (b) forward and (c) reverse I–V characteristics of the devices with different fin widths. Reproduced from Ref. [73]. Copyright 2021, AIP Publishing.

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Fig. 18.  (Color online) Cross-sectional schematic of (a) the NiO/β-Ga2O3 JFET and (b) the NiO/β-Ga2O3 JFET with recessed gate. Reproduced from Refs. [33, 81]. Copyright 2021 and 2022, IEEE.

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Fig. 19.  (Color online) (a) Schematic of β-Ga2O3 SBD with FLR. (b) Two-dimensional electric field distribution at a reverse bias of 1.89 kV for β-Ga2O3 SBD with FLR. Reproduced from Ref. [71]. Copyright 2021, AIP Publishing.

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Fig. 20.  (Color online) (a) Schematic of β-Ga2O3 SBD with NiO guard ring and FP termination. (b) Reverse I–V characteristics of β-Ga2O3 SBD without and with termination structure. Reproduced from Ref. [34]. Copyright 2022, AIP Publishing.

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Fig. 21.  (Color online) (a) 3-D schematic of the fabricated β-Ga2O3 SJ-equivalent MOSFET. (b) Measured ID–VD curves of the devices. (c) Reverse I–V characteristics of the devices. Reproduced from Ref. [35]. Copyright 2022, IEEE.

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Table 1.   Material properties of Ga2O3 and some competing semiconductors for power electronics.

MaterialSiGaAs4H-SiCGaNDiamondGa2O3
Band gap (eV)1.11.433.253.45.54.6–4.9
Critical electric field (MV/cm)0.30.42.53.3108
Electron mobility (cm2/(V·s))14808400100012502000300
Dielectric constant11.812.99.795.510
Baliga FOM (${\epsilon }{\mu }{{E} }_{{c} }^{3}$)114.731784624660>3000
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    Received: 27 December 2022 Revised: 24 February 2023 Online: Accepted Manuscript: 16 March 2023Uncorrected proof: 17 March 2023Corrected proof: 29 May 2023Published: 08 June 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(6): 061802
      Xing Lu, Yuxin Deng, Yanli Pei, Zimin Chen, Gang Wang. Recent advances in NiO/Ga2O3 heterojunctions for power electronics[J]. Journal of Semiconductors, 2023, 44(6): 061802. doi: 10.1088/1674-4926/44/6/061802 ****X Lu, Y X Deng, Y L Pei, Z M Chen, G Wang. Recent advances in NiO/Ga2O3 heterojunctions for power electronics[J]. J. Semicond, 2023, 44(6): 061802. doi: 10.1088/1674-4926/44/6/061802
      Citation:
      Xing Lu, Yuxin Deng, Yanli Pei, Zimin Chen, Gang Wang. Recent advances in NiO/Ga2O3 heterojunctions for power electronics[J]. Journal of Semiconductors, 2023, 44(6): 061802. doi: 10.1088/1674-4926/44/6/061802 ****
      X Lu, Y X Deng, Y L Pei, Z M Chen, G Wang. Recent advances in NiO/Ga2O3 heterojunctions for power electronics[J]. J. Semicond, 2023, 44(6): 061802. doi: 10.1088/1674-4926/44/6/061802
      shu

      Recent advances in NiO/Ga2O3 heterojunctions for power electronics

      DOI: 10.1088/1674-4926/44/6/061802

      • State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

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      • Xing Lu：received the B.S. degree from Fudan University, Shanghai, China, and the Ph.D. degree from The Hong Kong University of Science and Technology, Hong Kong. He is currently an Associate Professor with the State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China
      • Gang Wang：received the B.S. degree from Jilin University, Changchun, China, and the Ph.D. degree from Nagoya Institute of Technology, Japan. He is currently a Professor with the State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China
      • Corresponding author: stswangg@mail.sysu.edu.cn
      • Received Date: 2022-12-27
      • Revised Date: 2023-02-24
        • Available Online: 2023-03-16

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