Fig. 1.
(Color online) Cross-sectional schematic of the β-Ga2O3 MOSFET and its process flow.
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| Citation: |
Xuanze Zhou, Guangwei Xu, Shibing Long. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect[J]. Journal of Semiconductors, 2023, 44(7): 072804. doi: 10.1088/1674-4926/44/7/072804
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Xuanze Zhou, Guangwei Xu, Shibing Long. 2023: A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect. Journal of Semiconductors, 44(7): 072804. doi: 10.1088/1674-4926/44/7/072804
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A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect
DOI: 10.1088/1674-4926/44/7/072804
More Information
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Xuanze Zhou：got his BS from Nanchang University in 2018. Now he is a PhD student at University of Science and Technology of China under the supervision of Prof. Shibing Long and Dr. Guangwei Xu. His research focuses on gallium oxide power MOSFETs -
Guangwei Xu：received his PhD from the Institute of Microelectronics of the Chinese Academy of Sciences in 2017. Then, he joined the University of California, Los Angeles as a postdoc. He joined the University of Science and Technology of China as an associate research fellow in the Shibing Long Group in 2019. His research focuses on wide bandgap semiconductor power device fabrication, device defect state measurement and device modeling -
Shibing Long：is a full professor at the Institute of Microelectronics, University of Science and Technology of China. He received his PhD from the Institute of Microelectronics of the Chinese Academy of Sciences in 2005. Then, he worked there from 2005 to 2018 and joined the University of Science and Technology of China in 2018. His research focuses on micro- and nanofabrication, RRAM, ultrawide bandgap semiconductor devices (power devices and detectors) and memory circuit design - Corresponding author: xugw@ustc.edu.cn; shibinglong@ustc.edu.cn
- Revised Date: 2023-02-20 Available Online: 2023-03-14
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Abstract
The self-heating effect severely limits device performance and reliability. Although some studies have revealed the heat distribution of β-Ga2O3 MOSFETs under biases, those devices all have small areas and have difficulty reflecting practical conditions. This work demonstrated a multi-finger β-Ga2O3 MOSFET with a maximum drain current of 0.5 A. Electrical characteristics were measured, and the heat dissipation of the device was investigated through infrared images. The relationship between device temperature and time/bias is analyzed.-
Keywords:
- β-Ga2O3,
- MOSFET,
- multi-finger,
- self-heating effect
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References
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