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J. Semicond. > 2023, Volume 44 > Issue 9 > 091605
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A landscape of β-Ga2O3 Schottky power diodes

Man Hoi Wong

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 Corresponding author: Man Hoi Wong, eemhwong@ust.hk

DOI: 10.1088/1674-4926/44/9/091605

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Abstract: β-Ga2O3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga2O3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga2O3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.

Key words: β-Ga2O3, Schottky diodes; power device; edge termination; nickel oxide

Power electronics represent an ever-changing domain of vibrant research that covers a wide spectrum of materials, physics, devices, and applications concerning power conversion and management[1]. Of relevance to optoelectronic and display technologies are boost converters used to drive display backlights in modern portable electronic devices. Visible-light communication systems have been proposed to make use of high-brightness light-emitting diodes not only for lighting but also for transmitting information by rapidly modulating the intensity of the emitted light using fast drivers based on switched-mode converters. As the critical electric field (Ecr) of semiconductors increases super-linearly with increasing bandgap energy[2], ultrawide-bandgap (UWBG) semiconductors can tolerate high fields to enable high-power electronic devices. Apart from applications in power management, UWBG materials emit deep ultraviolet (UV) light and are therefore attractive for extending the working wavelengths of photonic devices beyond the UV–visible (UV–vis) spectrum to enable potential applications in deep-UV optoelectronics, quantum information science, and bio-chemical sensing.

The UWBG binary oxide, β-Ga2O3, has attracted significant attention because of its large 4.8-eV bandgap, controllable n-type doping with Si/Sn/Ge, and relatively high electron mobility of ~200 cm2/(V∙s)[3−6]. With an Ecr approximately three times that of SiC and GaN, β-Ga2O3 offers greater intrinsic power conversion efficiencies and further expansion of the operating-voltage–switching-frequency power electronics application space. Melt-grown native substrates are available for β-Ga2O3, indicating a path to commercially viable β-Ga2O3 devices[7, 8]. Due to its wide bandgap, broadband transparency, low cost, and high thermal/chemical stability, β-Ga2O3 has also emerged as a new platform for UV–vis nonlinear optics and integrated photonics such as waveguides and solar-blind photodetectors[9, 10].

As an integral part of power converters and inverters, β-Ga2O3 Schottky barrier diodes (SBDs) have been intensively studied and undergone rapid progress. The majority of β-Ga2O3 SBDs reported in the literature are vertical devices. Thanks to the availability of native β-Ga2O3 substrates with low dislocation density, thick β-Ga2O3 drift layers with low background carrier concentration can be grown homoepitaxially[11−16]. Compared with a lateral configuration, the breakdown voltage (Vbr) of vertical SBDs scales with the drift layer thickness as opposed to a lateral anode–to–cathode separation, which translates into a higher power density or a higher blocking voltage without sacrificing chip area. In addition, heat distribution is more uniform in vertical devices because of current spreading. Realization of the full potential of these devices requires proper edge termination designs that are suitable for implementation in β-Ga2O3 to limit the maximum electric field around the periphery of the rectifying contact.

β-Ga2O3 lacks p-type doping capability. This issue is fundamental to the material’s electronic band structure[17−19]. The absence of definitive demonstrations of p-type doping in β-Ga2O3 renders bipolar homojunction diodes that are prevalent in other power device technologies impractical for this oxide semiconductor. To circumvent the challenge of developing p-type doping in β-Ga2O3 for edge termination, heterogeneous integration of β-Ga2O3 with other p-type oxide semiconductors has been proposed. Reactive-sputtered nickel oxide (NiO) has been widely adopted for forming p–n heterojunctions with β-Ga2O3 because of its relatively large bandgap (3.7 eV), relative ease of deposition with readily available toolsets, and propensity to exhibit native p-type conductivity tunable over several orders of magnitude through controlling deposition conditions.

This paper reviews a broad portfolio of β-Ga2O3 SBDs, the vast majority of which employ one or more edge-termination techniques to mitigate edge breakdown and enhance their power figure-of-merit (PFOM). The design and operating principles of advanced rectifier structures are then examined. An assessment of β-Ga2O3 rectifier performance at elevated temperatures is provided toward the end.

2.1 Field-plated SBDs

Field plating is a relatively simple edge-termination technique that makes use of a metal–insulator–semiconductor (MIS) capacitor structure located at the edge of the main device junction to modulate the local electric field[20]. Apart from a single-step field plate, which is the simplest field plate geometry, various other designs of field plates such as multi-step and slanted geometries have been developed for high-voltage β-Ga2O3 SBDs. As a consequence of the simplicity and versatility of field plates, the literature contains an abundant documentation of field-plated β-Ga2O3 SBDs with a Vbr higher than 1 kV (Fig. 1)[21−25]. Large-area field-plated devices have also been realized[26−31], with the highest reported forward current exceeding 100 A. However, the reverse leakage and Vbr of large-area SBDs are typically worse than small-area devices of equivalent construction because of a higher probability of incorporating defects such as voids, dislocations, or polycrystalline inclusions within the active region[32−35].

Fig. 1.  (Color online) (a) Schematic of the first field-plated β-Ga2O3 SBD. (b) Forward current–voltage (I–V) characteristic of the device. (c) Reverse breakdown characteristic of the device. Reprinted from Ref. [21], with the permission of AIP Publishing.
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2.2 SBDs with ultrahigh-permittivity dielectric engineering

The choice of dielectrics used for field plate termination structures profoundly affects the reverse Vbr and leakage current of field-plated SBDs. To avoid accelerated dielectric degradation, the maximum field sustained by the dielectric should be limited to a value well below the threshold of catastrophic breakdown. Ultrahigh-permittivity dielectrics such as barium titanate and strontium titanate provide a new approach to edge termination for β-Ga2O3 power devices[36−40], whose high breakdown field calls for new methods of field management owing to a lack of dielectrics that can be stressed beyond the theoretical breakdown field of β-Ga2O3. These dielectrics are strongly polarizable by an external electric field, which induces internal dipoles and fixed surface charges in the dielectric material. When a reverse bias is applied to an ultrahigh-permittivity MIS capacitor associated with a field plate structure, the fringing electric field through the dielectric causes a lateral expansion of the depletion region in the semiconductor, thereby reducing the peak electric fields at the semiconductor surface. Furthermore, the induced polarization charges in the dielectric effectively screen both the positive donor charges in the semiconductor and the negative electron charges imaged in the anode metal. Thanks to this screening effect, the electric field in the ultrahigh-permittivity dielectric can be significantly lower than in the semiconductor, which leads to an increase in the effective barrier width for electron tunneling from the metal to the semiconductor. Achievements of a parallel-plane electric field of 5.7 MV/cm and a PFOM of 1.47 GW/cm2—the first >1 GW/cm2 demonstration for a unipolar vertical β-Ga2O3 device—highlight the efficacy of ultrahigh-permittivity dielectrics in enabling efficient edge termination and pushing the performance of β-Ga2O3 power devices toward intrinsic critical limits (Fig. 2)[39, 40].

Fig. 2.  (Color online) (a) Schematic of a β-Ga2O3 SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO3/SrTiO3 superlattice as the field-plate oxide [(BTO/STO)15 FP] and S2 corresponds to BaTiO3 as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential RON,sp of a β-Ga2O3 SBD with (BTO/STO)15 FP, a β-Ga2O3 SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. © 2021 IEEE. Reprinted, with permission, from Ref. [40].
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2.3 Mesa-terminated SBDs

The field-crowding effect at the edge of an SBD can be relaxed by removing materials around the device edge to form a mesa structure such that the depletion region can be terminated on the exposed sidewall of the mesa. Junction curvature at the device edge is inherently relieved or eliminated, allowing more uniform distribution of electric field within the device. A deep etch is most effective when etching is past the maximum depletion layer thickness for non-punch-through breakdown or the drift layer thickness for punch-through breakdown; in both cases, electric field is prevented from developing at the mesa foot, hence avoiding premature breakdown even with steep (~90°) mesa profiles[41, 42]. Alternatively, beveled mesas characterized by an inclined sidewall and a bevel angle at the mesa foot can be implemented. With sufficiently small bevel angles, these structures enable effective edge termination without a need for deep etching beyond the depletion boundary at the rated Vbr[43]. A bevel angle as small as ~1° has been fabricated (Fig. 3)[44]. In the forward conduction mode, the beveled geometry is advantageous for facilitating current spreading and enhancing current density. A dielectric is often deposited over the entire mesa structure after etching to passivate surface trap states caused by etch damage so as to mitigate parasitic leakage currents and ensure long-term device reliability.

Fig. 3.  (Color online) (a) Schematics of beveled-mesa β-Ga2O3 SBDs with a ~45° beveled field plate (BFP) and with a small-angle (~1°) beveled field plate (SABFP). (b) Reverse breakdown characteristics of the BFP-SBD and SABFP-SBD showing higher Vbr than those of mesa-free β-Ga2O3 SBDs that are either unterminated or terminated with a ~45° beveled surface field plate (SFP). (c) Forward I–V characteristics and differential RON,sp of SABFP-SBDs with different anode diameters. © 2019 IEEE. Reprinted, with permission, from Ref. [44].
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2.4 SBDs with resistive termination

The concept of resistive edge termination is based upon the introduction of a nominally insulating or intrinsic layer in contact with the anode periphery to spread the electric field by fringing. Resistive layers in β-Ga2O3 SBDs are commonly formed by ion implantation, which creates intrinsic defects via high-dose ion bombardment of either an inert species (e.g. He[45] or Ar[46, 47]) or a deep-level impurity (e.g. Mg[45, 48] or N[49, 50]) to form trap levels in the bandgap (Fig. 4). Resistive termination structures have also been implemented by etching a deep trench under the periphery of the Schottky contact and backfilling it with an insulating dielectric material like SiO2[25, 51]. Thermal annealing of n-type β-Ga2O3 in oxygen is known to deplete or reduce carriers over a finite volume underneath the surface[16, 52, 53], an effect exploited to fabricate resistive edge-termination structures in β-Ga2O3 SBDs[54−56]. Through a combination of large Vbr due to efficient termination and low specific on-resistance (RON,sp) due to high-quality epitaxy, a PFOM of up to 10.6 GW/cm2 that exceeds the 1-D unipolar limits of SiC and GaN has been realized in SBDs employing resistive termination[51].

Fig. 4.  (Color online) Comparison between reverse breakdown characteristics of β-Ga2O3 SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination. © 2020 IEEE. Reprinted, with permission, from Ref. [45].
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2.5 SBDs with fixed-charge termination

Fixed negative charges can be introduced, via plasma exposure or otherwise, to the surface of an n-type drift layer at the junction periphery to expand the depletion region along the surface from the main blocking junction, thus modifying the surface electric field and alleviating potential crowding at the junction periphery. Surface doping of β-Ga2O3 with fluoride ions for edge termination has been demonstrated via high-power CF4 plasma exposure (Fig. 5)[57]. In addition to the negative fixed charge model, the effect of fluorine has also been conjectured to arise from compensation of positively ionized Si donors via the formation of neutral complexes[58], and may thus be regarded as a type of resistive termination. Plasma treatment inflicts much lower damage than mesa etching or ion implantation. Determination of the optimal charge profile for a given device structure requires systematic simulations that consider the thickness and doping of the drift layer, the lateral extension of the termination region, as well as the rated voltage of the device.

Fig. 5.  (Color online) Schematics of an unterminated β-Ga2O3 SBD, a β-Ga2O3 SBD with self-aligned fluorine plasma treatment (FPT), and a β-Ga2O3 SBD with self-aligned beveled fluorine plasma treatment (BFPT). (b) Forward I–V characteristics and differential RON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs. © 2020 IEEE. Reprinted, with permission, from Ref. [57].
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2.6 Junction-terminated SBDs

2.6.1   Guard rings and junction termination extension

Schottky power rectifiers can be edge terminated by incorporating a highly doped guard ring to create a p–n junction that overlaps the edge of the Schottky metal, thereby completely screening the metal edge from high electric fields. Typical implementations of this approach in β-Ga2O3 make use of p-NiO to form the guard ring[59]. Another p-type material option is the group-Ⅲ nitride semiconductor in view of the prospects of high-quality Ⅲ-nitride epitaxy on β-Ga2O3. Simulations of hybrid p-AlGaN/β-Ga2O3 devices have predicted very promising performance that awaits experimental validation[60].

The efficiency of highly doped, single-layer termination such as the guard ring is known to be sensitive to the charge density of the p-type layer. To realize broad design window and process latitude, advanced junction termination structures make use of multiple p-NiO layers with various lengths and acceptor densities to allow for a graded decrease in effective charge density away from the device active region while forming an extended depletion region at the device periphery[61, 62]. At breakdown, the p-NiO is fully depleted to balance the charge in the β-Ga2O3 drift layer.

2.6.2   Field-limiting rings

The concept of field-limiting rings (FLRs) for terminating a Schottky rectifier involves surrounding the main blocking junction by one or more isolated concentric ring junctions that are either Schottky or p–n (Fig. 6)[63]. When the rectifier is under the blocking condition, this ring system reduces the amount of field crowding at the main junction by spreading the depletion layer consecutively past the ring junctions that are typically left floating. FLR termination of β-Ga2O3 SBDs is first demonstrated experimentally using mechanically exfoliated β-Ga2O3 flakes[64]. For higher voltage ratings, multiple rings are required to provide a Vbr close to the parallel-plane limit, whereby the electric field developed at the edge of a floating ring can be reduced by the addition of another floating ring. Judicious biasing of the FLRs can improve the termination efficiency owing to reduced sensitivity of the biased structure to the inter-ring distance and the additional control over breakdown [65].

Fig. 6.  (Color online) Schematic of a β-Ga2O3 SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted from Ref. [63], with the permission of AIP Publishing.
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SBDs typically display soft breakdown characteristics. At high reverse bias, Schottky barrier lowering due to the image-force effect results in large tunneling and thermionic emission currents that limit the breakdown of SBDs to voltages much smaller than the 1-D parallel-plane value even if edge effects are eliminated[66]. Consequently, the rated Vbr is determined by the maximum allowable leakage current instead of avalanche breakdown. The constraint imposed by high leakage current renders the effective PFOM of regular SBDs much lower than the projected theoretical limit of the semiconductor. Such discrepancy exacerbates for ultrawide-bandgap semiconductors like β-Ga2O3. While it is possible to approach the intrinsic Ecr of 6–8 MV/cm in β-Ga2O3 SBDs with a sufficiently large Schottky barrier (2.2–3 eV) (Fig. 7)[67], reducing the leakage current by increasing the Schottky barrier height comes with the penalty of a higher turn-on voltage (VON). To obtain a large Vbr without increasing the barrier height, the leakage needs to be decoupled from the reverse-bias voltage such that the maximum electric field is transferred from the Schottky interface to within the device body.

Fig. 7.  Calculated maximum surface electric fields (Esurf) in β-Ga2O3 SBDs, defined at a maximum reverse leakage current (JR,max) of 1 or 100 mA/cm2 at 25 °C. Experimental data from the literature are also shown (solid for JR,max = 1 mA/cm2 and hollow for JR,max = 100 mA/cm2). Adapted from Ref. [67], with the permission of AIP Publishing.
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The aforementioned electric-field profile can be achieved by embedding p–n junctions under the Schottky contact as a screen to lower the surface electric field during reverse bias[68−70], in a device structure known as the junction barrier Schottky diode (JBSD). The reduced-surface-field (RESURF) effect due to charge coupling between the p+ regions and the n– drift layer in JBSDs effectively minimizes Schottky barrier lowering and enables the JBSD structure to exhibit the low reverse leakage current of a p–n diode. Furthermore, one can capitalize on the RESURF effect to reduce the RON,sp and thus the power loss of a JBSD since the surface electric field at breakdown can be lower than the maximum electric field in the drift layer, which allows for higher doping in the drift layer for a given voltage rating. For UWBG semiconductors like β-Ga2O3, it is even more important to utilize the RESURF effect for medium- to high-voltage rectifiers owing to the large difference between Ecr and the leakage-limited practical maximum surface field. With effective native p-type doping remaining elusive in β-Ga2O3, researchers have sought to realize β-Ga2O3 JBSD structures based on p-NiO/n-Ga2O3 heterojunctions. JBSDs showing several orders of magnitude smaller leakage current with no or insignificant penalty on VON and RON,sp compared with a cofabricated regular SBD serve as a clear proof of concept for the RESURF effect (Fig. 8)[63, 71−74].

Fig. 8.  (Color online) (a) Schematic of the first β-Ga2O3 JBSD. (b) Forward I–V characteristic of the JBSD showing similar VON to a regular β-Ga2O3 SBD and lower VON than a p-NiO/n-Ga2O3 diode (PND). (c) Reverse breakdown characteristic of the JBSD showing higher Vbr than a regular β-Ga2O3 SBD because of the RESURF effect but lower Vbr than a PND owing to higher reverse leakage current through a Schottky junction. Reprinted with permission from Ref. [72]. Copyright 2019 SPIE.
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The periodic array of p–n junctions in a JBSD can be replaced with nonplanar MOS structures constructed in an alternating fin/trench geometry (Fig. 9) [75−83]. By virtue of the RESURF effect, the reverse leakage current in trench SBDs is generally much lower than in regular SBDs at destructive breakdown. The RESURF effect can be controlled through optimizations of the fin/trench geometry (fin width, trench depth, pitch size) to satisfy design constraints on RON,sp, reverse leakage, and maximum electric fields (Fig. 10). However, the RESURF effect also leads to enhanced electric fields at the bottom corners and the center of the trenches, the former of which can be managed by increasing the corner radius[84]. Orientation of the fin is found to have a strong influence on the forward conduction[85], where sidewall interface trapping is found to cause current collapse and delayed turn-on due to sidewall depletion[86]. To mitigate the sidewall trapping effects, wet acid treatments are performed to reduce the etch-induced damage and smooth the fin sidewalls.

Fig. 9.  (Color online) (a) Schematic of a field-plated β-Ga2O3 trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga2O3 trench SBDs. In comparison with regular β-Ga2O3 SBDs employing both mesa and field plate terminations, the field-plated trench devices have much lower leakage current and a much higher Vbr. (d) Forward I–V characteristics and differential RON,sp of field-plated β-Ga2O3 trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. © 2020 IEEE. Reprinted, with permission, from Ref. [82].
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Fig. 10.  (Color online) Simulated electric-field profiles in a β-Ga2O3 trench SBD along a vertical cutline at the center of a fin under a reverse bias of –1375 V by varying (a) fin width [Wfin, see Fig. 9(a)] and (b) trench depth [dtr, see Fig. 9(a)]. © 2020 IEEE. Reprinted, with permission, from Ref. [83].
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β-Ga2O3 rectifiers are attractive for high-temperature applications by virtue of their significantly lower intrinsic carrier density than in Si, SiC, and GaN. High-temperature operation at 500 °C has been demonstrated[87, 88]. Unique challenges arise from the device-level thermal resistance due to the low thermal conductivity of β-Ga2O3. It has been found that packaging strategies involving junction-side or flip-chip cooling as well as double-side cooling are the most effective. Thin-body rectifiers that are flip-chip packaged have achieved a high surge current of 59 A[89]. Double-side-cooled β-Ga2O3 SBDs have been shown to be capable of sustaining a peak surge current over 60 A (Fig. 11), with a ratio between the peak surge current and the rated current superior to that of similarly rated commercial SiC SBDs[90, 91]. Trench SBDs of β-Ga2O3 have also shown fascinating thermal stability[92, 93]. The resilience of β-Ga2O3 SBDs against high surge current is attributed to two key mechanisms [91]. First, the power-law temperature dependence of the RON,sp in β-Ga2O3 devices shows a temperature coefficient 2 to 4 times smaller than the corresponding values of SiC SBDs. This is possibly due to a weak temperature dependence of electron mobility in β-Ga2O3 and an increase in donor ionization at high temperatures[94], both reducing the risk of thermal runaway. Second, the double-side and flip-chip packaging strategies allow heat extraction directly from the Schottky junction rather than through the thermally resistive β-Ga2O3 substrate. It is noteworthy that impact ionization breakdown of β-Ga2O3 was recently demonstrated, albeit in a p-NiO/n-Ga2O3 heterojunction instead of an SBD[95]. Avalanche capability imparts surge robustness to β-Ga2O3 devices by enabling effective dissipation of the surge energy.

Fig. 11.  (Color online) (a) Schematic of a field-plated β-Ga2O3 SBD with double-side-cooling flip-chip package. (b) I–V waveforms of the double-side-cooled device in surge current tests. (c) I–V loops of the double-side-cooled device. © 2021 IEEE. Reprinted, with permission, from Ref. [90].
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β-Ga2O3 SBDs have demonstrated favorable attributes to be the next frontier in power electronic devices. These achievements benefit from the excellent quality of homoepitaxial growth on native substrates with low dislocation density. Various types of edge termination methods have been implemented for field management to effectively harness the high Ecr afforded by β-Ga2O3. To this end, there have been applications of p-type NiO for edge termination in β-Ga2O3 SBDs and for constructing β-Ga2O3 JBSD structures. The p-NiO/n-Ga2O3 heterojunction p–n diode is also attractive in its own right and has shown exemplary performance as a standalone power device [96−100]. By employing an optimized junction termination extension scheme, the PFOM for heterojunction diodes with a Vbr of 3.3 kV exceeds 2.5 GW/cm2, which surpasses the 1-D SiC limit and is among the highest in multi-kilovolt β-Ga2O3 rectifiers[100]. In JBSD and trench SBD structures, the maximum electric field is transferred from the Schottky interface to within the bulk of the drift layer thanks to the RESURF effect, which allows the field to be decoupled from the reverse leakage current, thus reducing the optimal RON,sp and improving the PFOM. Along with field management, heat dissipation to limit the junction temperature and improve the component reliability is also critical for maximizing the performance of β-Ga2O3 power devices.



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Fig. 1.  (Color online) (a) Schematic of the first field-plated β-Ga2O3 SBD. (b) Forward current–voltage (I–V) characteristic of the device. (c) Reverse breakdown characteristic of the device. Reprinted from Ref. [21], with the permission of AIP Publishing.

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Fig. 2.  (Color online) (a) Schematic of a β-Ga2O3 SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO3/SrTiO3 superlattice as the field-plate oxide [(BTO/STO)15 FP] and S2 corresponds to BaTiO3 as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential RON,sp of a β-Ga2O3 SBD with (BTO/STO)15 FP, a β-Ga2O3 SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. © 2021 IEEE. Reprinted, with permission, from Ref. [40].

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Fig. 3.  (Color online) (a) Schematics of beveled-mesa β-Ga2O3 SBDs with a ~45° beveled field plate (BFP) and with a small-angle (~1°) beveled field plate (SABFP). (b) Reverse breakdown characteristics of the BFP-SBD and SABFP-SBD showing higher Vbr than those of mesa-free β-Ga2O3 SBDs that are either unterminated or terminated with a ~45° beveled surface field plate (SFP). (c) Forward I–V characteristics and differential RON,sp of SABFP-SBDs with different anode diameters. © 2019 IEEE. Reprinted, with permission, from Ref. [44].

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Fig. 4.  (Color online) Comparison between reverse breakdown characteristics of β-Ga2O3 SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination. © 2020 IEEE. Reprinted, with permission, from Ref. [45].

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Fig. 5.  (Color online) Schematics of an unterminated β-Ga2O3 SBD, a β-Ga2O3 SBD with self-aligned fluorine plasma treatment (FPT), and a β-Ga2O3 SBD with self-aligned beveled fluorine plasma treatment (BFPT). (b) Forward I–V characteristics and differential RON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs. © 2020 IEEE. Reprinted, with permission, from Ref. [57].

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Fig. 6.  (Color online) Schematic of a β-Ga2O3 SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted from Ref. [63], with the permission of AIP Publishing.

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Fig. 7.  Calculated maximum surface electric fields (Esurf) in β-Ga2O3 SBDs, defined at a maximum reverse leakage current (JR,max) of 1 or 100 mA/cm2 at 25 °C. Experimental data from the literature are also shown (solid for JR,max = 1 mA/cm2 and hollow for JR,max = 100 mA/cm2). Adapted from Ref. [67], with the permission of AIP Publishing.

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Fig. 8.  (Color online) (a) Schematic of the first β-Ga2O3 JBSD. (b) Forward I–V characteristic of the JBSD showing similar VON to a regular β-Ga2O3 SBD and lower VON than a p-NiO/n-Ga2O3 diode (PND). (c) Reverse breakdown characteristic of the JBSD showing higher Vbr than a regular β-Ga2O3 SBD because of the RESURF effect but lower Vbr than a PND owing to higher reverse leakage current through a Schottky junction. Reprinted with permission from Ref. [72]. Copyright 2019 SPIE.

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Fig. 9.  (Color online) (a) Schematic of a field-plated β-Ga2O3 trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga2O3 trench SBDs. In comparison with regular β-Ga2O3 SBDs employing both mesa and field plate terminations, the field-plated trench devices have much lower leakage current and a much higher Vbr. (d) Forward I–V characteristics and differential RON,sp of field-plated β-Ga2O3 trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. © 2020 IEEE. Reprinted, with permission, from Ref. [82].

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Fig. 10.  (Color online) Simulated electric-field profiles in a β-Ga2O3 trench SBD along a vertical cutline at the center of a fin under a reverse bias of –1375 V by varying (a) fin width [Wfin, see Fig. 9(a)] and (b) trench depth [dtr, see Fig. 9(a)]. © 2020 IEEE. Reprinted, with permission, from Ref. [83].

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Fig. 11.  (Color online) (a) Schematic of a field-plated β-Ga2O3 SBD with double-side-cooling flip-chip package. (b) I–V waveforms of the double-side-cooled device in surge current tests. (c) I–V loops of the double-side-cooled device. © 2021 IEEE. Reprinted, with permission, from Ref. [90].

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    Man Hoi Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605
    M H Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605
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    Received: 30 August 2023 Revised: 16 September 2023 Online: Accepted Manuscript: 19 September 2023Corrected proof: 20 September 2023Uncorrected proof: 20 September 2023Published: 10 September 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(9): 091605
      Man Hoi Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605 ****M H Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605
      Citation:
      Man Hoi Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605 ****
      M H Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605
      shu

      A landscape of β-Ga2O3 Schottky power diodes

      DOI: 10.1088/1674-4926/44/9/091605

      • Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

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      • Man Hoi Wong：is an Associate Professor at the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology (HKUST). He received his Ph.D. from the University of California Santa Barbara, USA, in 2009. Prof. Wong has worked at the SEMATECH corporate research consortium in the USA and the National Institute of Information and Communications Technology in Japan as a research scientist. Prior to joining HKUST, he was an Assistant Professor at the University of Massachusetts Lowell, USA. His current research focuses on ultrawide-bandgap semiconductor materials and power devices
      • Corresponding author: eemhwong@ust.hk
      • Received Date: 2023-08-30
      • Revised Date: 2023-09-16
        • Available Online: 2023-09-19

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