Chin. J. Semicond. > 1995, Volume 16 > Issue 11 > 879-884

CONTENTS

GaSb晶体的高能N~＋注入及其光学性质

郑玉祥，苏毅，周仕明，马宏舟，陈良尧，郑安生，钱佑华，林成鲁，何冶平

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2633 Times PDF downloads: 1089 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 November 1995

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1995  >  16(11): 879-884
      郑玉祥，苏毅，周仕明，马宏舟，陈良尧，郑安生，钱佑华，林成鲁，何冶平. GaSb晶体的高能N~＋注入及其光学性质[J]. 半导体学报(英文版), 1995, 16(11): 879-884.
      Citation:
      郑玉祥，苏毅，周仕明，马宏舟，陈良尧，郑安生，钱佑华，林成鲁，何冶平. GaSb晶体的高能N~＋注入及其光学性质[J]. 半导体学报(英文版), 1995, 16(11): 879-884.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return