| Citation: |
Tu Deyu, Ji Zhuoyu, Shang Liwei, Liu Ming, Wang Congshun, Hu Wenping. Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition[J]. Journal of Semiconductors, 2008, 29(1): 50-54.
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Tu D Y, Ji Z Y, Shang L W, Liu M, Wang C S, Hu W P. Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition[J]. J. Semicond., 2008, 29(1): 50.
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Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition
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Abstract
The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) thin-film layer was sandwiched in a Ti/AgTCNQ/Au crossbar structure array as organic bistable devices (OBD).A reversible and reproducible memory switching property,caused by intermolecular charge transfer (CT) in the AgTCNQ thin-film,was observed in the organic bistable devices.The positive threshold voltage from the high impedance state to the low impedance was about 3.8~5V,with the reverse phenomenon occurring at a negative voltage of -3.5~-4.4V,lower than that with a CuTCNQ active layer.The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.-
Keywords:
- organic electronics,
- bistable switching,
- crossbar memory
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References
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Proportional views
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