Chin. J. Semicond. > 1988, Volume 9 > Issue 5 > 473-483
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适用于亚微米沟道MO SFET的阈值电压解析模型

汤庭鳌 , CarlosAraujo , 陈登元 and 章倩苓

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(5): 473-483
      汤庭鳌, CarlosAraujo, 陈登元, 章倩苓. 适用于亚微米沟道MO SFET的阈值电压解析模型[J]. 半导体学报(英文版), 1988, 9(5): 473-483.
      Citation:
      汤庭鳌, CarlosAraujo, 陈登元, 章倩苓. 适用于亚微米沟道MO SFET的阈值电压解析模型[J]. 半导体学报(英文版), 1988, 9(5): 473-483.
      shu

      • Received Date: 2015-08-19

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