Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 38-41

PDF

Abstract: 采用金属有机化学气相沉积方法在玻璃上生长了掺氮的低电阻p型ZnO薄膜.实验使用NO和N2O共同作为氧源,且NO同时作为掺氮源,二乙基锌作为锌源.X射线衍射测试表明薄膜具有c轴择优取向的结构特性,二次离子质谱分析证实了氮被掺入了ZnO薄膜.通过优化锌源流量获得了最高空穴浓度为1.97×10/up18/cm-3,最低电阻率为3.02Ω·cm的ZnO薄膜.

1

Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

Yang Xiaoli, Chen Nuofu, Yin Zhigang, Zhang Xingwang, Li Yang, et al.

Journal of Semiconductors, 2010, 31(9): 093001. doi: 10.1088/1674-4926/31/9/093001

2

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, et al.

Journal of Semiconductors, 2008, 29(8): 1475-1478.

3

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

Shi Huiling, Ma Xiaoyu, Hu Like, Chong Feng

Journal of Semiconductors, 2008, 29(1): 12-16.

4

Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells

Chen Xinliang, Xue Junming, Sun Jian, Zhao Ying, Geng Xinhua, et al.

Chinese Journal of Semiconductors , 2007, 28(7): 1072-1077.

5

Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE

Wang Dong, Zhang Jingwen, Han Feng, Zhang Xin'an, Bi Zhen, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 293-295.

6

Influence of O2/Ar Ratio on Optical Properties of ZnO Films

Yu Fen, Yan Jinliang, Ma Qiuming

Chinese Journal of Semiconductors , 2007, 28(S1): 153-156.

7

Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD

Pan Xinhua, Ye Zhizhen, Zhu Liping, Gu Xiuquan, He Haiping, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 279-281.

8

Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

Li Feng, Gu Shulin, Ye Jiandong, Zhu Shunming, Zhang Rong, et al.

Chinese Journal of Semiconductors , 2007, 28(3): 430-434.

9

Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition

Zhang Yinzhu, Ye Zhizhen, Lü Jianguo, He Haiping, Gu Xiuquan, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 322-325.

10

Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

Lu Yangfan, Ye Zhizhen, Zeng Yujia, Xu Weizhong, Zhu Liping, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 275-278.

11

Effect of Growth Temperature on Properties of ZnO Thin Films

Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, et al.

Chinese Journal of Semiconductors , 2006, 27(7): 1221-1224.

12

Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD

Zhou Xincui, Ye Zhizhen, Chen Fugang, Xu Weizhong, Miao Yan, et al.

Chinese Journal of Semiconductors , 2006, 27(1): 91-95.

13

InP基长波长光发射OEIC材料的MOCVD生长

江李, 林涛, 韦欣, 王国宏, 张广泽, et al.

Chinese Journal of Semiconductors , 2005, 26(2): 319-323.

14

Ga掺杂ZnO薄膜的MOCVD生长及其特性

Chinese Journal of Semiconductors , 2005, 26(8): 1567-1571.

15

ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells

Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, et al.

Chinese Journal of Semiconductors , 2005, 26(12): 2363-2368.

16

p型GaN的掺杂研究

金瑞琴, 朱建军, 赵德刚, 刘建平, 张纪才, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 508-512.

17

退火温度对ZnO薄膜结构和发光性能的影响

温战华, 王立, 方文卿, 蒲勇, 罗小平, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 498-501.

18

MOCVD生长Mg掺杂GaN的退火研究

冉军学, 王晓亮, 胡国新, 王军喜, 李建平, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 494-497.

19

常压MOCVD生长的ZnO薄膜的电学性能

周鹏, 王立, 方文卿, 蒲勇, 戴江南, et al.

Chinese Journal of Semiconductors , 2005, 26(3): 502-507.

20

LP-MOCVD生长ZnO薄膜的氧源

Chinese Journal of Semiconductors , 2003, 24(2): 177-182.

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2579 Times PDF downloads: 1602 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      徐伟中, 叶志镇, 周婷, 赵炳辉, 朱丽萍, 黄靖云. MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Journal of Semiconductors, 2005, 26(1): 38-41. ****徐伟中, 叶志镇, 周婷, 赵炳辉, 朱丽萍, 黄靖云, MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Journal of Semiconductors, 2005, 26(1), 38-41
      Citation:
      徐伟中, 叶志镇, 周婷, 赵炳辉, 朱丽萍, 黄靖云. MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Journal of Semiconductors, 2005, 26(1): 38-41. ****
      徐伟中, 叶志镇, 周婷, 赵炳辉, 朱丽萍, 黄靖云, MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Journal of Semiconductors, 2005, 26(1), 38-41

      MOCVD法以NO气体为掺杂源生长p型ZnO薄膜

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return