| Citation: |
Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, Chen Lei, Jiang Shan. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2008, 29(6): 1177-1179.
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Zhang R K, Dong L, Yu Y L, Wang D L, Zhang J, Chen L, Jiang S. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. J. Semicond., 2008, 29(6): 1177.
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Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy
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Abstract
An InGaAsP waveguide is integrated laterally to MQW using LP-MOCVD butt-joint technology. High quality for the regrowth interface and material is achieved.The loss of the butt-jointed waveguide is 7cm-1.This demonstrates the applicability of butt-joint technology in fabricating high quality future photonic integrated circuits.-
Keywords:
- MOCVD,
- butt-joint growth,
- waveguide
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References
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Proportional views
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