| Citation: |
Guo Debo, Liang Meng, Fan Manning, Liu Zhiqiang, Wang Liangchen, Wang Guohong. Study of AIGalnP/Si Wafer Bonding[J]. Journal of Semiconductors, 2007, 28(S1): 558-560.
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Guo D B, Liang M, Fan M N, Liu Z Q, Wang L C, Wang G H. Study of AIGalnP/Si Wafer Bonding[J]. Chin. J. Semicond., 2007, 28(S1): 558.
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Study of AIGalnP/Si Wafer Bonding
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Abstract
Wafer bonding is a new technology for integrating material and a hot issue in the field of optical electronic integration. This paper describes the integration of AIGalnP with Si using a AuSn alloy as a bonding material. From the currentvoltage measurements·it is found that the bonded interfaces do not obstruct the carrier transport.The CROSS-sectional micro-graphs of the joined wafers show that the quality of bonded material is good.Furthermore，the optical reflection measurements reveal that the AuSn alloy works as a reflector，which is a suitable characteristic for the integration of A1GalnP lightemitting devices with Si.-
Keywords:
- bonding,
- AIGalnP,
- I-V characteristics,
- AuSn alloy
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References
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Proportional views
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