J. Semicond. > 2008, Volume 29 > Issue 7 > 1407-1411

PAPERS

Temperature Dependence of Digital Single Event Transient

Liang Bin, Chen Shuming and Liu Biwei

+ Author Affiliations

PDF

Abstract: Using mixed-mode simulation,the temperature dependence of digital single event transient (DSET)in an inverter chain has been studied.It was found that the temperature dependence of DSET is much more serious than that of SEU.When the temperature rises from -55 to 125℃,the width of DSET increases about 58.8%.

Key words: mixed-mode simulationDSETvery deep sub-micronradiation

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3448 Times PDF downloads: 1772 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 09 January 2008 Online: Published: 01 July 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Liang Bin, Chen Shuming, Liu Biwei. Temperature Dependence of Digital Single Event Transient[J]. Journal of Semiconductors, 2008, 29(7): 1407-1411. ****Liang B, Chen S M, Liu B W. Temperature Dependence of Digital Single Event Transient[J]. J. Semicond., 2008, 29(7): 1407.
      Citation:
      Liang Bin, Chen Shuming, Liu Biwei. Temperature Dependence of Digital Single Event Transient[J]. Journal of Semiconductors, 2008, 29(7): 1407-1411. ****
      Liang B, Chen S M, Liu B W. Temperature Dependence of Digital Single Event Transient[J]. J. Semicond., 2008, 29(7): 1407.

      Temperature Dependence of Digital Single Event Transient

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-25
      • Revised Date: 2008-01-09
      • Published Date: 2008-08-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return