| Citation: |
Zhang Fan, Zhao Youwen, Dong Zhiyuan, Zhang Rui, Yang Jun. Bulk Single Crystal Growth and Properties of In-Doped ZnO[J]. Journal of Semiconductors, 2008, 29(8): 1540-1543.
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Zhang F, Zhao Y W, Dong Z Y, Zhang R, Yang J. Bulk Single Crystal Growth and Properties of In-Doped ZnO[J]. J. Semicond., 2008, 29(8): 1540.
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Bulk Single Crystal Growth and Properties of In-Doped ZnO
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Abstract
The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport (CVT) method.Indium doped n-type ZnO single crystals with a carrier concentration of 1E18~1E19cm-3 have been obtained reproducibly by CVT.The doped indium exhibits high activation efficiency as a shallow donor in a ZnO single crystal.As doping concentration increases,the optical absorption and electrical properties of the In-ZnO change significantly.Defects and their influence on the In-ZnO single crystals have been analyzed.-
Keywords:
- zinc oxide,
- doping,
- CVT,
- single crystal
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References
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Proportional views
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