Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 297-301
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注F MOS器件的可靠性研究

张国强 , 陆妩 , 范隆 , 余学锋 , 郭旗 , 任迪远 and 严荣良

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 297-301
      张国强, 陆妩, 范隆, 余学锋, 郭旗, 任迪远, 严荣良. 注F MOS器件的可靠性研究[J]. 半导体学报(英文版), 1997, 18(4): 297-301.
      Citation:
      张国强, 陆妩, 范隆, 余学锋, 郭旗, 任迪远, 严荣良. 注F MOS器件的可靠性研究[J]. 半导体学报(英文版), 1997, 18(4): 297-301.
      shu

      • Received Date: 2015-08-19

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