Citation: |
Hu Jin, Du Lei, Zhuang Yiqi, He Liang, Bao Junlin, Huang Xiaojun, Chen Chunxia, Wei Tao. Noise as a Representation for CTR of Optoelectronic Coupled Devices[J]. Journal of Semiconductors, 2007, 28(4): 597-603.
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Hu J, Du L, Zhuang Y, He L, Bao J, Huang X J, Chen C X, Wei T. Noise as a Representation for CTR of Optoelectronic Coupled Devices[J]. Chin. J. Semicond., 2007, 28(4): 597.
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Noise as a Representation for CTR of Optoelectronic Coupled Devices
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Abstract
Based on study of the principle of OCDs and the theory of 1/f noise,we present a CTR model and 1/f noise model of OCDs.The electric noise and CTR of OCDs are measured over a wide range of currents,and the experimental results agree well with the proposed models.By integrating the CTR model and 1/f noise model,a relationship between CTR degradation and 1/f noise is further studied.The relationship is used to analyze irradiation experiments,and results agree precisely with the theoretical model.This proves by theory and experiment that the larger the noise magnitude,the closer the current exponent is to 2,leading to the degradation of device reliability and significant degradation of the CTR.Consequently,it is shown that noise can represent not only the CTR of OCDs but also the reliability of the device. -
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