Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1423-1427
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Cu(In,Ga)_3Se_5薄膜结构的Raman研究

徐传明 , 许小亮 , 徐军 , 杨晓杰 , 左健 , 党学明 , 冯叶 , 黄文浩 and 刘洪图

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Key words: Cu(In,Ga)3Se5, 有序缺陷化合物, 晶格振动, Raman散射

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1423-1427
      徐传明, 许小亮, 徐军, 杨晓杰, 左健, 党学明, 冯叶, 黄文浩, 刘洪图. Cu(In,Ga)_3Se_5薄膜结构的Raman研究[J]. 半导体学报(英文版), 2004, 25(11): 1423-1427.
      Citation:
      徐传明, 许小亮, 徐军, 杨晓杰, 左健, 党学明, 冯叶, 黄文浩, 刘洪图. Cu(In,Ga)_3Se_5薄膜结构的Raman研究[J]. 半导体学报(英文版), 2004, 25(11): 1423-1427.
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      • Received Date: 2015-08-19

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