| Citation: |
Xiao Deyuan, Chen Guoqing, Li Ruojia, Lu Pusheng, Chen Liangcheng, Liu Yong, Shen Qichang. Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout[J]. Journal of Semiconductors, 2007, 28(6): 923-930.
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Xiao D Y, Chen G Q, Li R J, Lu P S, Chen L C, Liu Y, Shen Q C. Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout[J]. Chin. J. Semicond., 2007, 28(6): 923.
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Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout
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Abstract
The characteristics,experiment,and three dimensional device simulations of a new planar split dual gate (PSDG) MOSFET device are reported for the first time.Theoretical calculation and 3D simulation as well as the experimental data show that the two independent split dual gates can provide dynamical control of device characteristics such as threshold voltage and sub-threshold swing as well as the device saturated current.The PSDG MOSFET transistor leakage current can be reduced by as much as 78% of a traditional single gate MOSFET.The PSDG is fabricated and fully compatible with our conventional 0.18μm logic process flow. -
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