Chin. J. Semicond. > 1988, Volume 9 > Issue 5 > 553-558
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微重力条件下生长GaAs单晶的电学和光学性质研究

王占国 , 石志文 , 徐寿定 , 傅建明 and 林兰英

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(5): 553-558
      王占国, 石志文, 徐寿定, 傅建明, 林兰英. 微重力条件下生长GaAs单晶的电学和光学性质研究[J]. 半导体学报(英文版), 1988, 9(5): 553-558.
      Citation:
      王占国, 石志文, 徐寿定, 傅建明, 林兰英. 微重力条件下生长GaAs单晶的电学和光学性质研究[J]. 半导体学报(英文版), 1988, 9(5): 553-558.
      shu

      • Received Date: 2015-08-19

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