Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 579-585
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超薄栅MOS器件热载流子应力下SILC的产生机制(英文)

杨国勇 , 霍宗亮 , 王金延 , 毛凌锋 , 王子欧 , 谭长华 and 许铭真

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Key words: 应力感应漏电流, 热载流子应力, 超薄栅氧化层, MOS器件

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 579-585
      杨国勇, 霍宗亮, 王金延, 毛凌锋, 王子欧, 谭长华, 许铭真. 超薄栅MOS器件热载流子应力下SILC的产生机制(英文)[J]. 半导体学报(英文版), 2003, 24(6): 579-585.
      Citation:
      杨国勇, 霍宗亮, 王金延, 毛凌锋, 王子欧, 谭长华, 许铭真. 超薄栅MOS器件热载流子应力下SILC的产生机制(英文)[J]. 半导体学报(英文版), 2003, 24(6): 579-585.
      shu

      • Received Date: 2015-08-20

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