Chin. J. Semicond. > 1997, Volume 18 > Issue 5 > 367-370

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1997

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      邹德恕, 陈建新, 沈光地, 高国, 杜金玉, 张时明, 袁颖, 王东凤, 邓军, W.X.Ni, G.V.Hansson. 在液氮温度下具有高增益的SiGe/SiHBT[J]. 半导体学报(英文版), 1997, 18(5): 367-370.
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      邹德恕, 陈建新, 沈光地, 高国, 杜金玉, 张时明, 袁颖, 王东凤, 邓军, W.X.Ni, G.V.Hansson. 在液氮温度下具有高增益的SiGe/SiHBT[J]. 半导体学报(英文版), 1997, 18(5): 367-370.

      • Received Date: 2015-08-19

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