Chin. J. Semicond. > 1999, Volume 20 > Issue 5 > 421-424
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金属/绝缘层/硅(MIS)隧道二极管的发光机理

俞建华 , 孙承休 , 高中林 , 魏同立 and 王启明

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(5): 421-424
      俞建华, 孙承休, 高中林, 魏同立, 王启明. 金属/绝缘层/硅(MIS)隧道二极管的发光机理[J]. 半导体学报(英文版), 1999, 20(5): 421-424.
      Citation:
      俞建华, 孙承休, 高中林, 魏同立, 王启明. 金属/绝缘层/硅(MIS)隧道二极管的发光机理[J]. 半导体学报(英文版), 1999, 20(5): 421-424.
      shu

      • Received Date: 2015-08-20

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