Chin. J. Semicond. > 1993, Volume 14 > Issue 6 > 345-352
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低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析

陈德勇 , 朱龙德 , 李晶 , 熊飞克 , 徐俊英 , 万寿科 and 梁骏吾

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(6): 345-352
      陈德勇, 朱龙德, 李晶, 熊飞克, 徐俊英, 万寿科, 梁骏吾. 低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析[J]. 半导体学报(英文版), 1993, 14(6): 345-352.
      Citation:
      陈德勇, 朱龙德, 李晶, 熊飞克, 徐俊英, 万寿科, 梁骏吾. 低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析[J]. 半导体学报(英文版), 1993, 14(6): 345-352.
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      • Received Date: 2015-08-20

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