| Citation: |
Wang Yuxia, Liu Chunling, Lu Peng, Wang Yong, Qu Yi, Liu Guojun. 1.3μm AlInGaAs Strained Single Quantum Well Laser Diodes with High Characteristic Temperature of 200K[J]. Journal of Semiconductors, 2007, 28(12): 1912-1915.
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Wang Y X, Liu C L, Lu P, Wang Y, Qu Y, Liu G J. 1.3μm AlInGaAs Strained Single Quantum Well Laser Diodes with High Characteristic Temperature of 200K[J]. Chin. J. Semicond., 2007, 28(12): 1912.
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1.3μm AlInGaAs Strained Single Quantum Well Laser Diodes with High Characteristic Temperature of 200K
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Abstract
A high characteristic temperature (T0) of 200K from a 1.3μm AlInGaAs/AlInAs single-quantum-well laser diode with the asymmetric waveguide layer structure under CW operation at 20 to 80℃ was obtained,which is the best result reported in the laser diodes (LDs) of the same active materials structure and emitting wavelength.AlInGaAs as an active layer,therefore,is very promising for the fabrication of long-wavelength LDs with excellent high-temperature performance.It is found that the asymmetric waveguide layer structure can decrease optical absorption and improve the high-temperature performance and catastrophic optical damage threshold of LDs. -
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