Analysis on Characteristic of Static Induction Transistor Using Mirror Method

Hu Dongqing; Li Siyuan，and Wang Yongshun

Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 258-265

CONTENTS

Analysis on Characteristic of Static Induction Transistor Using Mirror Method

Hu Dongqing and Li Siyuan，and Wang Yongshun

+ Author Affiliations

Abstract: A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinchedoff factor;gate efficiency η decreases as the gate dimension α2 and shifted gate voltage are minished,and what differs from the firstorder theory is that η will tend to zero at the shifted gate voltage tends to zero when VD=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triodelike and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.

1	High density three dimensional integration of organic transistors Xiaojun Guo Journal of Semiconductors, 2019, 40(3): 030201. doi: 10.1088/1674-4926/40/3/030201
2	Design of current mirror integration ROIC for snapshot mode operation Hari Shanker Gupta, A S Kiran Kumar, M. Shojaei Baghini, Subhananda Chakrabarti, Sanjeev Mehta, et al. Journal of Semiconductors, 2016, 37(10): 105001. doi: 10.1088/1674-4926/37/10/105001
3	Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor S. Theodore Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. Mohankumar, et al. Journal of Semiconductors, 2015, 36(6): 064003. doi: 10.1088/1674-4926/36/6/064003
4	Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Ming Yang, Yang Zhou, et al. Journal of Semiconductors, 2014, 35(12): 124003. doi: 10.1088/1674-4926/35/12/124003
5	Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric S. Theodore Chandra, N. B. Balamurugan Journal of Semiconductors, 2014, 35(4): 044001. doi: 10.1088/1674-4926/35/4/044001
6	Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication V.K. Dwivedi, P. Srivastava, G. Vijaya Prakash Journal of Semiconductors, 2013, 34(3): 033001. doi: 10.1088/1674-4926/34/3/033001
7	Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect Gourab Dutta, Sukla Basu Journal of Semiconductors, 2012, 33(5): 054002. doi: 10.1088/1674-4926/33/5/054002
8	A signal processing method for the friction-based endpoint detection system of a CMP process Xu Chi, Guo Dongming, Jin Zhuji, Kang Renke Journal of Semiconductors, 2010, 31(12): 126002. doi: 10.1088/1674-4926/31/12/126002
9	Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor Zhang Yong, Yang Jianhong, Cai Xueyuan, Wang Zaixing Journal of Semiconductors, 2010, 31(4): 044002. doi: 10.1088/1674-4926/31/4/044002
10	Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors Fu Xiaojun, Zhang Haiying, Guo Changxin, Xu Jingbo, Li Ming, et al. Journal of Semiconductors, 2009, 30(8): 084002. doi: 10.1088/1674-4926/30/8/084002
11	Ternary logic circuit design based on single electron transistors Wu Gang, Cai Li, Li Qin Journal of Semiconductors, 2009, 30(2): 025011. doi: 10.1088/1674-4926/30/2/025011
12	A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication Xiao Deyuan, Wang Xi, Yuan Haijiang, Yu Yuehui, Xie Zhifeng, et al. Journal of Semiconductors, 2009, 30(1): 014001. doi: 10.1088/1674-4926/30/1/014001
13	Development and characteristics analysis of recessed-gate MOS HEMT Wang Chong, Ma Xiaohua, Feng Qian, Hao Yue, Zhang Jincheng, et al. Journal of Semiconductors, 2009, 30(5): 054002. doi: 10.1088/1674-4926/30/5/054002
14	Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al. Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004
15	Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, et al. Chinese Journal of Semiconductors , 2006, 27(2): 235-238.
16	Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia Chinese Journal of Semiconductors , 2006, 27(2): 229-234.
17	Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, et al. Chinese Journal of Semiconductors , 2006, 27(2): 298-303.
18	Improved Statistical Interconnect Timing Analysis Considering Scattering Effect Lin Saihua, Yang Huazhong, Luo Rong, Wang Hui Chinese Journal of Semiconductors , 2006, 27(11): 1918-1922.
19	Design, Fabrication, and Testing of Single-Side Alignment of 16×0.8nm Arrayed Waveguide Grating Li Jian, An Junming, Wang Hongjie, Xia Junlei, Hu Xiongwei, et al. Chinese Journal of Semiconductors , 2005, 26(2): 254-257.
20	Space Charges Effect of Static Induction Transistor Chen Jinhuo, Liu Su, Wang Yongshun, Li Siyuan, and Zhang Fujia, et al. Chinese Journal of Semiconductors , 2005, 26(3): 423-428.

Search

GET CITATION

Hu Dongqing, Li Siyuan，and Wang Yongshun. Analysis on Characteristic of Static Induction Transistor Using Mirror Method[J]. Journal of Semiconductors, 2005, 26(2): 258-265.

Analysis on Characteristic of Static Induction Transistor Using Mirror Method[J]. Chin. J. Semicond., 2005, 26(2): 258.

Export: BibTex EndNote

Article Metrics

Article views: 2207 Times PDF downloads: 1653 Times Cited by: 0 Times

History

Received: 19 August 2015 Revised: Online: Published: 01 February 2005

A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinchedoff factor;gate efficiency η decreases as the gate dimension α2 and shifted gate voltage are minished,and what differs from the firstorder theory is that η will tend to zero at the shifted gate voltage tends to zero when VD=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triodelike and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.

Analysis on Characteristic of Static Induction Transistor Using Mirror Method

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Analysis on Characteristic of Static Induction Transistor Using Mirror Method

Abstract

References

Proportional views

Catalog

Analysis on Characteristic of Static Induction Transistor Using Mirror Method

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Analysis on Characteristic of Static Induction Transistor Using Mirror Method

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content