| Citation: |
Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping, Wang Liangchen. Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates[J]. Journal of Semiconductors, 2007, 28(4): 563-566.
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Ma L, Zhang Y, Dai Y, Yang F H, Zeng Y P, Wang L C. Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates[J]. Chin. J. Semicond., 2007, 28(4): 563.
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Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates
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Abstract
Resonant tunneling diodes (RTDs) with different barrier thicknesses were grown by molecular beam epitaxy (MBE) on semi-insulating InP substrates.The highest peak-to-valley current ratio is 18.39 at room temperature.The relationship between RTD direct current characteristics with barrier thickness,well and sub-well thickness,spacer thickness,and doping density are analyzed and discussed. -
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