Chin. J. Semicond. > 1988, Volume 9 > Issue 6 > 674-675

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硅中注入氢后形成的稳定性缺陷

李建明

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(6): 674-675
      李建明. 硅中注入氢后形成的稳定性缺陷[J]. 半导体学报(英文版), 1988, 9(6): 674-675.
      Citation:
      李建明. 硅中注入氢后形成的稳定性缺陷[J]. 半导体学报(英文版), 1988, 9(6): 674-675.
      shu

      • Received Date: 2015-08-19

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