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Zhu Xinghua, Zhao Beijun, Zhu Shifu, Jin Yingrong, Xiang Anping, Wei Zhaorong. Growth of PbI2 Crystal with Excessive Pb and Its Characterization[J]. Journal of Semiconductors, 2007, 28(6): 898-901.
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Zhu X H, Zhao B J, Zhu S F, Jin Y R, Xiang A P, Wei Z R. Growth of PbI2 Crystal with Excessive Pb and Its Characterization[J]. Chin. J. Semicond., 2007, 28(6): 898.
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Growth of PbI2 Crystal with Excessive Pb and Its Characterization
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Abstract
PbI2 single crystal,an important room temperature radiation material,was grown using a special technique,and a detector sensitive to γ-ray was also fabricated.XRD analysis indicates that the structure of the grown crystal is 2H with hexagonal space group of P3m1.IR measurement shows that the transmission rate of the crystal sample (10mm×10mm×1mm) reaches 40% on average in the range of 400~4000cm-1.UV absorption testing indicates that the cut-off wavelength of the sample is 547.6nm,corresponding to a band gap of 2.27eV.A room temperature detector fabricated from the grown crystal is sensitive to 241Am 59.5keV γ-rays.The full width at half maximum (FWHM) of the obtained energy spectrum is 26.7keV. -
References
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