Chin. J. Semicond. > 1989, Volume 10 > Issue 10 > 739-745
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Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质

江若琏 , 郑有炓 , 傅浩 , 邵建军 and 黄善祥

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    江若琏, 郑有炓, 傅浩, 邵建军, 黄善祥. Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质[J]. 半导体学报(英文版), 1989, 10(10): 739-745.
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    Received: 19 August 2015 Revised: Online: Published: 01 October 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(10): 739-745
      江若琏, 郑有炓, 傅浩, 邵建军, 黄善祥. Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质[J]. 半导体学报(英文版), 1989, 10(10): 739-745.
      Citation:
      江若琏, 郑有炓, 傅浩, 邵建军, 黄善祥. Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质[J]. 半导体学报(英文版), 1989, 10(10): 739-745.
      shu

      • Received Date: 2015-08-19

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