Chin. J. Semicond. > 1998, Volume 19 > Issue 4 > 280-286
|

CONTENTS

深亚微米薄层SOI/MOSFET’s热载流子效应分析

曹建民 , 吴传良 , 沈文正 and 黄敞

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3130 Times PDF downloads: 1515 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(4): 280-286
      曹建民, 吴传良, 沈文正, 黄敞. 深亚微米薄层SOI/MOSFET’s热载流子效应分析[J]. 半导体学报(英文版), 1998, 19(4): 280-286.
      Citation:
      曹建民, 吴传良, 沈文正, 黄敞. 深亚微米薄层SOI/MOSFET’s热载流子效应分析[J]. 半导体学报(英文版), 1998, 19(4): 280-286.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return