Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 657-661
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GaAs(100)热退火表面的变角XPS定量分析

汪贵华 , 杨伟毅 and 常本康

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Key words: 砷化镓, X射线光电子能谱, 层结构, 热退火

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 657-661
      汪贵华, 杨伟毅, 常本康. GaAs(100)热退火表面的变角XPS定量分析[J]. 半导体学报(英文版), 2000, 21(7): 657-661.
      Citation:
      汪贵华, 杨伟毅, 常本康. GaAs(100)热退火表面的变角XPS定量分析[J]. 半导体学报(英文版), 2000, 21(7): 657-661.
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      • Received Date: 2015-08-20

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