| Citation: |
LIU En-feng, LIU Xiao-yan, HAN Ru-qi. 3-D Simulation of FINFET[J]. Journal of Semiconductors, 2002, 23(9): 909-913.
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LIU En-feng, LIU Xiao-yan, HAN Ru-qi. 2002: 3-D Simulation of FINFET. Journal of Semiconductors, 23(9): 909-913.
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3-D Simulation of FINFET
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Abstract
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and subthreshold characteristics, as well as the short channel effect (SCE) are carefully investigated. SCE can be well controlled by reducing fin height. Good performance can be achieved with thin height, so fin height is considered as a key parameter in device design. Simulation results show that FINFETs present performance superior to conventional single gate devices.
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Keywords:
- FINFET,
- 3-D simulation,
- short channel effect
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References
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Proportional views
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