| Citation: |
Huo Mingxue, Liu Xiaowei, Zhang Dan, Wang Xilian, Song Minghao. Piezoresistive Effect of Polysilicon Films at High Temperature[J]. Journal of Semiconductors, 2005, 26(11): 2115-2119.
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Huo M X, Liu X W, Zhang D, Wang X L, Song M H. Piezoresistive Effect of Polysilicon Films at High Temperature[J]. Chin. J. Semicond., 2005, 26(11): 2115.
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Piezoresistive Effect of Polysilicon Films at High Temperature
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Abstract
The high-temperature piezoresistive effect of polysilicon films is investigated.The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained,considering experimental influences of deposition temperature and film thickness on gauge factors.Polysilicon films with a Boron-doped concentration of about 1e19cm-3 are experimentally studied from room temperature to 560℃.Experimental results show that the polysilicon piezoresistors can work over 560℃.-
Keywords:
- piezoresistive effect,
- polysilicon,
- gauge factor
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References
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Proportional views
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