Chin. J. Semicond. > 2002, Volume 23 > Issue 5 > 513-516
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自对准GaInP/GaAs HBT器件

钱永学 , 刘训春 , 王润梅 and 石瑞英

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Key words: 异质结双极晶体管, 镓铟磷/镓砷, T形发射极, 侧向内切

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(5): 513-516
      钱永学, 刘训春, 王润梅, 石瑞英. 自对准GaInP/GaAs HBT器件[J]. 半导体学报(英文版), 2002, 23(5): 513-516.
      Citation:
      钱永学, 刘训春, 王润梅, 石瑞英. 自对准GaInP/GaAs HBT器件[J]. 半导体学报(英文版), 2002, 23(5): 513-516.
      shu

      • Received Date: 2015-08-19

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