Electrical Characteristics of Cubic ZnMgO

Jin Guofen; Wu Huizhen; Liang Jun; Lao yanfeng; Yu Ping; Xu Tianning

Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 167-170

Electrical Characteristics of Cubic ZnMgO

Jin Guofen, Wu Huizhen, Liang Jun, Lao yanfeng, Yu Ping and Xu Tianning

Laboratory of Physics for Solid State Electronic Materials and Devices, Department of Physics，Zhejiang University，Hangzhou 310027，China,Laboratory of Physics for Solid State Electronic Materials and Devices·Department of Physics，Zhejiang University，Hangzhou 310027，China
State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,Laboratory of Physics for Solid State Electronic Materials and Devices·Department of Physics，Zhejiang University，Hangzhou 310027，China and State Key Laboratory of Functional Materials for lnformatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

Abstract: In order to investigate the electrical performance of the cubic ZnMgO--a newdielectric material with wide band gap.the cubic ZnMgO film was deposited on silicon and then made into metal-insulator-semiconductor (MIS) structure.Good dielectric property with dielectric constant of 10.5±0.5 was attained by the capacitance-voltage characteristic curves of the MIS structures，and the dielectric constant decreased from 10.7 to 6.4 when the frequency changed from 1 to 8MHz.Current-voltage curves of the MIS structures were also analyzed and the mechanism of the leakage current in the dielectric material was discussed.

Key words: cubic MgZnO thin film, MIS structure, dielectric constant, leakage current

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Received: 27 May 2016 Revised: Online: Published: 01 January 2007

In order to investigate the electrical performance of the cubic ZnMgO--a newdielectric material with wide band gap.the cubic ZnMgO film was deposited on silicon and then made into metal-insulator-semiconductor (MIS) structure.Good dielectric property with dielectric constant of 10.5±0.5 was attained by the capacitance-voltage characteristic curves of the MIS structures，and the dielectric constant decreased from 10.7 to 6.4 when the frequency changed from 1 to 8MHz.Current-voltage curves of the MIS structures were also analyzed and the mechanism of the leakage current in the dielectric material was discussed.

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