Citation: |
Jin Guofen, Wu Huizhen, Liang Jun, Lao yanfeng, Yu Ping, Xu Tianning. Electrical Characteristics of Cubic ZnMgO[J]. Journal of Semiconductors, 2007, 28(S1): 167-170.
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Jin G F, Wu H Z, Liang J, Lao Y F, Yu P, Xu T N. Electrical Characteristics of Cubic ZnMgO[J]. Chin. J. Semicond., 2007, 28(S1): 167.
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Electrical Characteristics of Cubic ZnMgO
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Abstract
In order to investigate the electrical performance of the cubic ZnMgO--a newdielectric material with wide band gap.the cubic ZnMgO film was deposited on silicon and then made into metal-insulator-semiconductor (MIS) structure.Good dielectric property with dielectric constant of 10.5±0.5 was attained by the capacitance-voltage characteristic curves of the MIS structures,and the dielectric constant decreased from 10.7 to 6.4 when the frequency changed from 1 to 8MHz.Current-voltage curves of the MIS structures were also analyzed and the mechanism of the leakage current in the dielectric material was discussed. -
References
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