Chin. J. Semicond. > 1988, Volume 9 > Issue 6 > 604-613
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(Si)_(2n)/(Si_(1-x)Ge_x)_(2n)(100)形变层超晶格的电子结构

沈丁立 and 张开明

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(6): 604-613
      沈丁立, 张开明. (Si)_(2n)/(Si_(1-x)Ge_x)_(2n)(100)形变层超晶格的电子结构[J]. 半导体学报(英文版), 1988, 9(6): 604-613.
      Citation:
      沈丁立, 张开明. (Si)_(2n)/(Si_(1-x)Ge_x)_(2n)(100)形变层超晶格的电子结构[J]. 半导体学报(英文版), 1988, 9(6): 604-613.
      shu

      • Received Date: 2015-08-19

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